公开(公告)号：US20230282663A1

公开(公告)日：2023-09-07

申请号：US18100216

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645

Abstract: An image sensor includes a first pixel and a second pixel disposed adjacent to the first pixel. A pixel separation structure is disposed between the first pixel and the second pixel. A rear anti-reflection layer is disposed on the first pixel, the second pixel, and the pixel separation structure. A fence structure is disposed on the rear anti-reflection layer and positioned to overlap the pixel separation structure in a plan view. The fence structure includes a barrier metal layer and a fence. A height of the barrier metal layer is less than a height of the fence. A width of the barrier metal layer is less than a width of the fence.

公开(公告)号：US11024659B2

公开(公告)日：2021-06-01

申请号：US16555151

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung Hur ,  Youngtak Kim ,  Hajin Lim

IPC: H01L27/146

Abstract: An image sensor and a method of fabricating an image sensor are provided, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.

公开(公告)号：US11574948B2

公开(公告)日：2023-02-07

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Kwansik Kim ,  Dongchan Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Taeyon Lee ,  Hajin Lim

IPC: H01L27/146 ,  H01L51/44 ,  H01L29/786

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

公开(公告)号：US08912611B2

公开(公告)日：2014-12-16

申请号：US14190346

申请日：2014-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： WeonHong Kim ,  Dae-Kwon Joo ,  Hajin Lim ,  Jinho Do ,  Kyungil Hong ,  Moonkyun Song

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/512 ,  H01L21/28202 ,  H01L21/28255 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.

Abstract translation: 制造半导体器件的方法包括在半导体层上形成下界面层，下界面层为氮化物层，在下界面层上形成中间界面层，中间界面层为氧化物层，形成 中间界面层上的高k电介质层。 高k电介质层的介电常数高于下界面层和中间界面层的介电常数。

公开(公告)号：US20240222401A1

公开(公告)日：2024-07-04

申请号：US18231445

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L29/4238

Abstract: A semiconductor device and an image sensor are disclosed. The semiconductor device includes: a gate pattern disposed on a substrate; a first interlayer insulating layer on a sidewall of the gate pattern; a second interlayer insulating layer on the gate pattern and the first interlayer insulating layer; and a first contact plug passing through the second interlayer insulating layer and the first interlayer insulating layer and being in contact with the substrate, where the first contact plug comprises a first contact part in the first interlayer insulating layer and a second contact part in the second interlayer insulating layer, a density of the first interlayer insulating layer is smaller than a density of the second interlayer insulating layer, the first contact part of the first contact plug has a first width, and the second contact part of the first contact plug has a second width smaller than the first width.

公开(公告)号：US20220238604A1

公开(公告)日：2022-07-28

申请号：US17510576

申请日：2021-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keewon Kim ,  Byeongtaek Bae ,  Dail Eom ,  Minkyung Lee ,  Hajin Lim

IPC: H01L27/30 ,  H01L51/44

Abstract: A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.

公开(公告)号：US20250006765A1

公开(公告)日：2025-01-02

申请号：US18758732

申请日：2024-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jehyung RYU ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface, and a second surface opposite to the first surface, the semiconductor substrate further including a photoelectric conversion region; a transmission gate disposed on the first surface of the semiconductor substrate; a buried insulation layer disposed on the first surface of the semiconductor substrate to cover the transmission gate; and a pixel isolation structure disposed in a pixel isolation trench, the pixel isolation trench extending toward the second surface of the semiconductor substrate from the first surface of the semiconductor substrate and passing through the buried insulation layer, the pixel isolation structure defining a plurality of pixels in the semiconductor substrate, a portion of the pixel isolation structure being covered by the buried insulation layer.

公开(公告)号：US12108613B2

公开(公告)日：2024-10-01

申请号：US17510576

申请日：2021-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keewon Kim ,  Byeongtaek Bae ,  Dail Eom ,  Minkyung Lee ,  Hajin Lim

IPC: H10K39/32 ,  H10K30/87

CPC classification number: H10K39/32 ,  H10K30/87

Abstract: A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.

公开(公告)号：US20240088181A1

公开(公告)日：2024-03-14

申请号：US18454110

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683

Abstract: Provided is an image sensor including a semiconductor substrate including a first pixel and a second pixel adjacent to the first pixel, a pixel isolation structure between the first pixel and the second pixel, an anti-reflection layer on the first pixel, the second pixel, and the pixel isolation structure, and a through via structure in a through via hole that is in the anti-reflection layer and the semiconductor substrate. The through via structure may include a first conductive layer on an inner wall of the through via hole, and a second conductive layer on the first conductive layer on the inner wall of the through via hole, and the anti-reflection layer may include TiO2, and the first conductive layer may include a material having a higher work function than Ti.

公开(公告)号：US09142461B2

公开(公告)日：2015-09-22

申请号：US14289076

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho Do ,  Hajin Lim ,  WeonHong Kim ,  Kyungil Hong ,  Moonkyun Song

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L21/823462 ,  H01L21/26506 ,  H01L21/28185 ,  H01L21/2822 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer.

Abstract translation: 准备包括NMOS晶体管区域和PMOS晶体管区域的衬底。 在PMOS晶体管区域上形成硅 - 锗层。 氮原子注入硅 - 锗层的上部。 在NMOS晶体管区域和PMOS晶体管区域上形成第一栅极电介质层。 在形成第一栅极电介质层之前，将氮原子注入硅 - 锗层的上部。