公开(公告)号：US10587815B2

公开(公告)日：2020-03-10

申请号：US15857978

申请日：2017-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il Seuk Song ,  Hyun Cheol Kim

IPC: H04N5/235 ,  H04N5/232

Abstract: An Image capturing device and a method of driving the image capturing device are provided. The image capturing device includes an image sensor configured to generate a target image based on a predetermined first exposure target value. An image signal processor generates a second exposure target value based on brightness information of the acquired target image to control the image sensor, wherein the image signal processor includes a histogram generation circuit configured to create a luma histogram based on the brightness information of the acquired target image, a calculation circuit configured to calculate a distribution of the luma histogram, and an exposure target control circuit configured to generate the second exposure target value based on the distribution of the luma histogram to provide the second exposure target value to the image sensor.

公开(公告)号：US20230387297A1

公开(公告)日：2023-11-30

申请号：US18151021

申请日：2023-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Heun Lee ,  Yong Seok Kim ,  Hyun Cheol Kim ,  Dae Won Ha

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/78391 ,  H01L29/516 ,  H01L29/401 ,  H01L29/6684

Abstract: A semiconductor device including a ferroelectric field effect transistor (FeFET) and a method for fabricating the same are provided. The semiconductor device includes a substrate, a gate electrode film including a metal element, on the substrate, a gate insulating film including a ferroelectric material between the substrate and the gate electrode film, and a buffer oxide film including an oxide of a semiconductor material between the gate insulating film and the gate electrode film, the buffer oxide film being in contact with the gate insulating film.

公开(公告)号：US11711918B2

公开(公告)日：2023-07-25

申请号：US17227793

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Hwan Lee ,  Yong Seok Kim ,  Hyun Cheol Kim ,  Satoru Yamada ,  Sung Won Yoo ,  Jae Ho Hong

IPC: H10B41/70 ,  H10B41/20 ,  H10B41/35 ,  H10B41/41 ,  H10B41/50

CPC classification number: H10B41/70 ,  H10B41/20 ,  H10B41/35 ,  H10B41/41 ,  H10B41/50

Abstract: Provided is a semiconductor memory device. The semiconductor memory device comprises a first semiconductor pattern including a first impurity region, a second impurity region, and a channel region, the first impurity region spaced apart from a substrate in a first direction and having a first conductivity type, the second impurity region having a second conductivity type different from the first conductivity type, and the channel region between the first impurity region and the second impurity region, a first conductive connection line connected to the first impurity region and extending in a second direction different from the first direction and a first gate structure extending in the first direction and including a first gate electrode and a first gate insulating film, wherein the first gate electrode penetrates the channel region and the first gate insulating film is between the first gate electrode and the semiconductor pattern.

公开(公告)号：US12048150B2

公开(公告)日：2024-07-23

申请号：US17377848

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Hwan Lee ,  Yong Seok Kim ,  Il Gweon Kim ,  Hyun Cheol Kim ,  Hyeoung Won Seo ,  Sung Won Yoo ,  Jae Ho Hong

IPC: H10B43/20 ,  H10B43/10

CPC classification number: H10B43/20 ,  H10B43/10

Abstract: A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.

公开(公告)号：US12133009B2

公开(公告)日：2024-10-29

申请号：US18086449

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Soon Kang ,  Hyun Cheol Kim ,  Woo Bin Song ,  Kyung Hwan Lee

IPC: H04N25/77 ,  H04N25/51 ,  H04N25/59 ,  H04N25/709 ,  H04N25/76

CPC classification number: H04N25/77 ,  H04N25/709

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.

公开(公告)号：US20180191934A1

公开(公告)日：2018-07-05

申请号：US15857978

申请日：2017-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il Seuk Song ,  Hyun Cheol Kim

IPC: H04N5/235

CPC classification number: H04N5/2353 ,  H04N5/23212 ,  H04N5/2351

Abstract: An Image capturing device and a method of driving the image capturing device are provided. The image capturing device includes an image sensor configured to generate a target image based on a predetermined first exposure target value. An image signal processor generates a second exposure target value based on brightness information of the acquired target image to control the image sensor, wherein the image signal processor includes a histogram generation circuit configured to create a luma histogram based on the brightness information of the acquired target image, a calculation circuit configured to calculate a distribution of the luma histogram, and an exposure target control circuit configured to generate the second exposure target value based on the distribution of the luma histogram to provide the second exposure target value to the image sensor.

公开(公告)号：US09709315B2

公开(公告)日：2017-07-18

申请号：US13650621

申请日：2012-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok Jun Son ,  Sung Cheol Kang ,  Hyun Cheol Kim

IPC: F25B1/00 ,  F25B49/00 ,  F25D23/00 ,  F25B31/00

CPC classification number: F25D23/00 ,  F25B31/00

Abstract: A relay module includes a case forming an exterior of the relay module, a Positive Temperature Coefficient (PTC) device configured to control the supply of power to the compressor, a holder mounted at the case and configured to accommodate the PTC device, a start capacitor electrically connected to the PTC device, a first connecting terminal having a first PTC connecting terminal connected to the PTC device and a first capacitor connecting terminal connected to the start capacitor, and a second connecting terminal having a second PTC connecting terminal connected to the PTC device and a second capacitor connecting terminal connected to the start capacitor. The first capacitor connecting terminal and the second capacitor connecting terminal are spaced apart a predetermined distance from a bottom surface of the case.