公开(公告)号：US20160099049A1

公开(公告)日：2016-04-07

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG ,  Hyun-kook PARK

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract translation: 用于操作存储器件的方法包括：检测存储器件的温度变化，调整读取操作的参考电流的电平，以及基于调节的参考电流的电平从存储器件的存储器单元读取数据。 当存储器件的温度升高时，将参考电流的电平从参考值调整到第一值，并且当存储器件的温度降低时，将参考电流的电平从参考值调整到第二值。 参考值和第一值之间的差异与参考值和第二值的差异不同。

公开(公告)号：US20160049197A1

公开(公告)日：2016-02-18

申请号：US14744605

申请日：2015-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-kook PARK ,  Yeong-taek LEE ,  Chi-weon YOON

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C5/025 ,  G11C7/18 ,  G11C8/14 ,  G11C11/1653 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C16/08 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/71 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device is provided including a cell region including at least one cell layer, each cell layer including multiple first lines and multiple second lines; and a control region including at least one control layer. The at least one control layer includes multiple circuit regions for performing a memory operation on the cell region. The multiple first lines include at least one first signal line through which a first signal from a first circuit region of the control layer is transmitted to a second circuit region of the control layer.

Abstract translation: 提供了一种存储器件，其包括包括至少一个单元层的单元区域，每个单元层包括多条第一行和多条第二行; 以及包括至少一个控制层的控制区域。 所述至少一个控制层包括用于对单元区域执行存储器操作的多个电路区域。 多个第一行包括至少一个第一信号线，来自控制层的第一电路区域的第一信号通过该第一信号线传输到控制层的第二电路区域。