公开(公告)号：US20160049197A1

公开(公告)日：2016-02-18

申请号：US14744605

申请日：2015-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-kook PARK ,  Yeong-taek LEE ,  Chi-weon YOON

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C5/025 ,  G11C7/18 ,  G11C8/14 ,  G11C11/1653 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C16/08 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/71 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device is provided including a cell region including at least one cell layer, each cell layer including multiple first lines and multiple second lines; and a control region including at least one control layer. The at least one control layer includes multiple circuit regions for performing a memory operation on the cell region. The multiple first lines include at least one first signal line through which a first signal from a first circuit region of the control layer is transmitted to a second circuit region of the control layer.

Abstract translation: 提供了一种存储器件，其包括包括至少一个单元层的单元区域，每个单元层包括多条第一行和多条第二行; 以及包括至少一个控制层的控制区域。 所述至少一个控制层包括用于对单元区域执行存储器操作的多个电路区域。 多个第一行包括至少一个第一信号线，来自控制层的第一电路区域的第一信号通过该第一信号线传输到控制层的第二电路区域。

公开(公告)号：US20160358648A1

公开(公告)日：2016-12-08

申请号：US15009814

申请日：2016-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mu-hui PARK ,  Yeong-taek LEE ,  Dae-seok BYEON

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/062 ,  G11C11/5642 ,  G11C13/0061 ,  G11C2013/0054 ,  G11C2211/5645

Abstract: A resistive memory device comprising: a memory cell having a programmable resistance representing stored data; and a read circuit configured to be connected to the memory cell via a first signal line and read the stored data, wherein the read circuit includes: a voltage controller configured to control a first voltage of the first signal line to be a constant voltage and output a signal to a sensing node; and a sense amplifier connected to the voltage controller via the sensing node, and configured to compare a sensing voltage of the sensing node with a reference voltage.

Abstract translation: 一种电阻式存储器件，包括：具有表示存储数据的可编程电阻的存储单元; 以及读取电路，被配置为经由第一信号线连接到所述存储单元并读取所存储的数据，其中所述读取电路包括：电压控制器，被配置为将所述第一信号线的第一电压控制为恒定电压并输出 到感测节点的信号; 以及感测放大器，其经由感测节点连接到电压控制器，并且被配置为将感测节点的感测电压与参考电压进行比较。

公开(公告)号：US20160099052A1

公开(公告)日：2016-04-07

申请号：US14724909

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0088 ,  G11C2013/0092

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。

公开(公告)号：US20160099049A1

公开(公告)日：2016-04-07

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG ,  Hyun-kook PARK

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract translation: 用于操作存储器件的方法包括：检测存储器件的温度变化，调整读取操作的参考电流的电平，以及基于调节的参考电流的电平从存储器件的存储器单元读取数据。 当存储器件的温度升高时，将参考电流的电平从参考值调整到第一值，并且当存储器件的温度降低时，将参考电流的电平从参考值调整到第二值。 参考值和第一值之间的差异与参考值和第二值的差异不同。