公开(公告)号：US09691685B2

公开(公告)日：2017-06-27

申请号：US15163995

申请日：2016-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ha Lee ,  Hyung-Jun Jeon ,  Jum-Yong Park ,  Byung-Lyul Park ,  Ji-Soon Park ,  Jin-Ho An ,  Jin-Ho Chun

IPC: H01L23/544 ,  H01L23/48 ,  H01L23/00 ,  H01L23/532 ,  H01L21/768 ,  H01L21/78

CPC classification number: H01L23/481 ,  H01L21/76852 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3192 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/544 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L2223/5446 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06151 ,  H01L2224/06156 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/014

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

公开(公告)号：US10580726B2

公开(公告)日：2020-03-03

申请号：US16106645

申请日：2018-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Ho Chun ,  Seong-Min Son ,  Hyung-Jun Jeon ,  Kwang-Jin Moon ,  Jin-Ho An ,  Ho-Jin Lee ,  Atsushi Fujisaki

IPC: H01L23/498 ,  H01L23/525 ,  H01L23/532 ,  H01L23/31 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.

公开(公告)号：US20170033032A1

公开(公告)日：2017-02-02

申请号：US15163995

申请日：2016-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ha Lee ,  Hyung-Jun Jeon ,  Jum-Yong Park ,  Byung-Lyul Park ,  Ji-Soon Park ,  Jin-Ho An ,  Jin-Ho Chun

IPC: H01L23/48 ,  H01L21/78 ,  H01L23/532 ,  H01L21/768 ,  H01L23/544 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/76852 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3192 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/544 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L2223/5446 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06151 ,  H01L2224/06156 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/014

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract translation: 半导体器件包括具有管芯区域和围绕管芯区域的划线区域的衬底，穿过管芯区域中的衬底的多个通孔结构，一部分通孔结构暴露在衬底的表面上，以及 保护层图案结构，其设置在所述基板的表面上，所述表面包围所述通孔结构的所述暴露部分的侧壁，并且具有覆盖所述划线区域的与所述通孔结构相邻的至少一部分的突出部分。