公开(公告)号：US20240186409A1

公开(公告)日：2024-06-06

申请号：US18372325

申请日：2023-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooyeol MAENG ,  Hyungjin Lee ,  Huichul Shin

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0649 ,  H01L29/7851

Abstract: An integrated circuit device includes: a semiconductor substrate; first and second conductivity type wells formed in the semiconductor substrate; a source region formed in the second conductivity type well; a drain region formed in the first conductivity type well; a recess insulating layer disposed between the source region and the drain region, and including an upper insulating unit and a lower insulating unit, wherein the upper insulating unit fills an upper substrate recess that extends from an upper surface of the first conductivity type well, and wherein the lower insulating unit fills a lower substrate recess that extends from the upper substrate recess; and a gate electrode layer arranged on the first and second conductivity type wells, and wherein the recess insulating layer has a shape in which both sides thereof are asymmetric with respect to a center of the upper insulating unit.

公开(公告)号：US11908807B2

公开(公告)日：2024-02-20

申请号：US17574212

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Huichul Shin ,  Hyungjin Lee ,  Jinhong Park ,  Mingeun Song ,  Euiyoung Jeong ,  Hiroki Fujii

IPC: H01L23/552 ,  H01L21/82 ,  H01L21/78

CPC classification number: H01L23/552

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.

公开(公告)号：US20130256186A1

公开(公告)日：2013-10-03

申请号：US13783657

申请日：2013-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doojin Kim ,  Hyungjin Lee ,  Youngsik Kim ,  Sungbok Hong ,  Yongmin Kim ,  Chulmin Kim

IPC: H01L21/673

CPC classification number: H01L21/6735 ,  H01L21/6732

Abstract: A strip member loading magazine, which may load strip members such as semiconductor integrated circuit lead frames, for example, may include a bottom plate, a plurality of first slot plates provided at opposite sides of the bottom plate, a top plate fixed to a top portion of the first slot plates to be parallel to the bottom plate, second slot plates disposed to face each other between the first slot plates and be able to be moved, and locking units fastening the second slot plates to at least the top or bottom plate, the second slot plates being fastened parallel to the first slot plates.

Abstract translation: 例如，可以装载诸如半导体集成电路引线框架的条状部件的条形部件装载仓可以包括底板，设置在底板的相对侧的多个第一狭槽板，固定到顶部的顶板 所述第一狭槽板的一部分平行于所述底板，所述第二狭槽板设置成在所述第一狭槽板之间彼此面对并且能够移动;以及锁定单元，其将所述第二狭槽板紧固到至少所述顶板或底板 第二槽板平行于第一槽板固定。

公开(公告)号：US12082357B2

公开(公告)日：2024-09-03

申请号：US17855115

申请日：2022-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeryun Yoo ,  Youngtae Kim ,  Kiyul Lim ,  Wooktae Kim ,  Hyungjin Lee

IPC: G06F1/16 ,  H01B1/02 ,  H05K5/00 ,  H05K5/02

CPC classification number: H05K5/0217 ,  H01B1/02 ,  H05K5/0017

Abstract: An electronic device includes: a flexible display that is configured to be deformable to a first state, in which an exposed amount of a display area of the flexible display has a first size, and a second state, in which the exposed amount of the display area is expanded in a first direction; a deformable member including a liquid-state electrode, the deformable member configured to deform in a length direction based on the flexible display transitioning between the first state and the second state; a deformation sensing circuit configured to sense a resistance component of the liquid-state electrode, the resistance component corresponding to an exposure degree of the display area; a connector member electrically connecting the deformable member and the deformation sensing circuit; a rigid member coupled to the deformable member; and a fixed structure contacting a partial area of the rigid member.

公开(公告)号：US20230261106A1

公开(公告)日：2023-08-17

申请号：US18092246

申请日：2022-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooyeol Maeng ,  Hyungjin Lee ,  Huichul Shin

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/49 ,  H01L21/265 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/4966 ,  H01L29/7851 ,  H01L21/26513 ,  H01L21/28088 ,  H01L29/66545 ,  H01L29/66681

Abstract: A transistor includes a substrate including a P-type-sub region doped with P-type impurities, a well region positioned at an upper portion of the substrate and doped with P-type impurities, a gate structure on the well region, and drain and source regions. The gate structure includes a gate insulation layer, first and second conductive patterns for adjusting a threshold voltage and a gate electrode. The drain and source regions are positioned at an upper portion of the substrate adjacent first and second sidewalk of the gate structure, respectively. The source region is doped with N-type impurities. The drain region includes a highly doped N-type impurity region, an N-type impurity region, and a lightly doped P-type impurity region sequentially disposed in a downward direction from a top surface of the substrate. A boundary between the well region and the P-type sub region is positioned under a bottom of the drain region.

公开(公告)号：US08905239B2

公开(公告)日：2014-12-09

申请号：US13783657

申请日：2013-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doojin Kim ,  Hyungjin Lee ,  Youngsik Kim ,  Sungbok Hong ,  Yongmin Kim ,  Chulmin Kim

IPC: B65D85/00 ,  H01L21/673

CPC classification number: H01L21/6735 ,  H01L21/6732

Abstract: A strip member loading magazine, which may load strip members such as semiconductor integrated circuit lead frames, for example, may include a bottom plate, a plurality of first slot plates provided at opposite sides of the bottom plate, a top plate fixed to a top portion of the first slot plates to be parallel to the bottom plate, second slot plates disposed to face each other between the first slot plates and be able to be moved, and locking units fastening the second slot plates to at least the top or bottom plate, the second slot plates being fastened parallel to the first slot plates.

Abstract translation: 例如，可以装载诸如半导体集成电路引线框架的条状部件的条形部件装载仓可以包括底板，设置在底板的相对侧的多个第一狭槽板，固定到顶部的顶板 所述第一狭槽板的一部分平行于所述底板，所述第二狭槽板设置成在所述第一狭槽板之间彼此面对并且能够移动;以及锁定单元，其将所述第二狭槽板紧固到至少所述顶板或底板 第二槽板平行于第一槽板固定。