公开(公告)号：US20190123272A1

公开(公告)日：2019-04-25

申请号：US16014871

申请日：2018-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hyun JEONG ,  ILMOK PARK ,  Si-Ho SONG

IPC: H01L45/00 ,  G11C13/00

Abstract: Disclosed are a variable resistance memory device and a method of manufacturing the same. The device comprises a first conductive line extending in a first direction, a second conductive line extending in a second direction intersecting the first direction, a memory cell at an intersection between the first conductive line and the second conductive line, a first electrode between the first conductive line and the memory cell, and a second electrode between the second conductive line and the memory cell. The memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line. Resistivity of the first resistivity control pattern is less than resistivity of the second electrode.

公开(公告)号：US20180358555A1

公开(公告)日：2018-12-13

申请号：US16010447

申请日：2018-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  ILMOK PARK ,  Junhee LIM

IPC: H01L45/00 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C13/00 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/1157

CPC classification number: H01L45/1233 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C13/0004 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144

Abstract: Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

公开(公告)号：US20180158872A1

公开(公告)日：2018-06-07

申请号：US15700154

申请日：2017-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： ILMOK PARK ,  Sungwon KIM ,  Seulji SONG ,  Ji-Hyun JEONG

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L45/06 ,  H01L45/1253

Abstract: A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.

公开(公告)号：US20170200768A1

公开(公告)日：2017-07-13

申请号：US15247987

申请日：2016-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： ILMOK PARK

IPC: H01L27/24 ,  H01L45/00

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes first and second conductive lines, and a variable resistance material and a switching element between the first and second conductive lines. The switching element includes first and second portions that extend and/or face in different first and second directions, respectively. Methods of manufacturing a variable resistance memory device are also provided.