公开(公告)号：US10538843B2

公开(公告)日：2020-01-21

申请号：US15385006

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Sik Sim ,  Jung-Suk Oh ,  Jae-Seok Kim ,  Ho-Gon Kim ,  Jun-Won Lee ,  Hyuk-Yul Choi ,  Hyung-Ho Kim ,  Sang-Jin Choi ,  Heok-Jae Lee ,  Dong-Ok Shin ,  Jang-Hyoun Youm ,  Ichiro Nishikawa ,  Masanori Terasaka ,  Masashi Hamada ,  Tae-Hoon Lee

IPC: C23C16/455 ,  C23C16/44

Abstract: A vaporizer includes a main body including a first body and a second body. The first body has an upper portion narrowing in a direction of a height of the first body and the second body has a cavity in which the first body is positioned. A mixing chamber is between the first and second bodies. The second body includes a carrier gas injection path connected to a carrier gas inlet formed in an upper portion of the mixing chamber. The carrier gas injection path carries a carrier gas. A source material injection path is connected to a source material inlet formed in the mixing chamber. The source material injection path carries a liquid source material. A discharge is connected to an outlet formed in a lower portion of the mixing chamber. A mixed fluid including the carrier gas and the liquid source material is discharged through the discharge path.

公开(公告)号：US09136270B2

公开(公告)日：2015-09-15

申请号：US14027372

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul Kim ,  Jae-Seok Kim ,  Chan-Hong Park

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/423 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。

公开(公告)号：US09048975B2

公开(公告)日：2015-06-02

申请号：US14213393

申请日：2014-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Ji-Hun Koo ,  Jang-Yong Park ,  Kil-Hwan Kim ,  Jae-Seok Kim

IPC: H04B7/02 ,  H04L1/02 ,  H04L1/00 ,  H03M13/11

CPC classification number: H04L1/00 ,  H03M13/1111 ,  H04L1/0047 ,  H04L1/0057 ,  H04L1/06

Abstract: A method for detecting soft-decisions in a 2×2 MIMO system includes detecting all candidate symbol vector sets S in which there exist all values of a real part and an imaginary part, and calculating a log-likelihood ratio (LLR) with respect to the candidate symbol vector sets S from LLR ⁡ ( b k i ) = min s ∈ S ⋂ β i , k - ⁢ ED ⁡ ( s ) 2 ⁢ σ n 2 - min s ∈ S ⋂ β i , k + ⁢ ED ⁡ ( s ) 2 ⁢ σ n 2 .

Abstract translation: 一种用于检测2×2 MIMO系统中的软判决的方法，包括检测存在实部和虚部的所有值的所有候选符号向量集合S，并且计算相对于 候选符号向量将S从LLR⁡（bki）= min s∈S⋂＆bgr; i，k-ED⁡（s）2＆sgr; n 2 - min s∈S⋂＆bgr; i，k + ED⁡（s）2＆sgr; n 2。

公开(公告)号：US09023704B2

公开(公告)日：2015-05-05

申请号：US13801341

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il-Young Yoon ,  Chang-Sun Hwang ,  Bo-Kyeong Kang ,  Jae-Seok Kim ,  Ho-Young Kim ,  Bo-Un Yoon

IPC: H01L21/336 ,  H01L27/14 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L29/66545

Abstract: A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer.

Abstract translation: 一种制造半导体器件的方法包括形成覆盖形成在衬底上的翅片的预隔离层，所述预隔离层包括与所述翅片接触的下预分离层和不与所述翅片接触的上预隔离层 通过执行第一抛光工艺去除上部预隔离层的一部分，并且平坦化预隔离层，使得翅片的上表面和预隔离层的上表面共面，通过执行 用于去除上部预隔离层的剩余部分的第二抛光工艺。

公开(公告)号：US20150023441A1

公开(公告)日：2015-01-22

申请号：US14012372

申请日：2013-08-28

Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Hun Koo ,  Jang-Yong Park ,  Min-Joon Kim ,  Jae-Seok Kim ,  Hyun-Sub Kim

IPC: H04B7/04

CPC classification number: H04B7/0456 ,  H04B7/0452 ,  H04B7/0691 ,  H04B7/086

Abstract: A method of operating a wireless local area network (WLAN) station. The WLAN station receives at least one desired signal and at least one interference signal from an access point (AP) capable of simultaneously transmitting desired signals to multiple WLAN stations. The method includes estimating a channel and generating a channel matrix estimated based on the estimated channel, separating a channel matrix of the desired signal and a channel matrix of the interference signal from the estimated channel matrix, generating the matrix of a virtual channel by combining the separated channel matrixes, and executing a sphere decoding (SD) algorithm using the matrix of the virtual channel.Or, separating a desired signal and an interference signal from the stream signal based on the analysis result, ascertaining a modulation scheme of the interference signal, and setting the ascertained modulation scheme of the interference signal as decreased lattice points.

Abstract translation: 一种操作无线局域网（WLAN）站的方法。 WLAN站从接收点（AP）接收至少一个期望信号和至少一个干扰信号，接入点能够同时向多个WLAN站发送所需信号。 该方法包括：估计信道并生成基于所估计的信道估计的信道矩阵，从所估计的信道矩阵中分离所需信号的信道矩阵和干扰信号的信道矩阵，通过组合所述信道矩阵生成虚拟信道的矩阵 分离的信道矩阵，并且使用虚拟信道的矩阵来执行球体解码（SD）算法。 或者，基于分析结果，从流信号中分离出期望的信号和干扰信号，确定干扰信号的调制方式，并将确定的干扰信号的调制方式设定为减小的格点。

公开(公告)号：US09854521B2

公开(公告)日：2017-12-26

申请号：US14713731

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei-University

Inventor： Ji-Hun Koo ,  Min-Joon Kim ,  Jang-Yong Park ,  Hyuk-Yeon Lee ,  Jae-Seok Kim

IPC: H04W52/02 ,  H04B7/0452 ,  H04B7/04 ,  H04J11/00

CPC classification number: H04W52/0219 ,  H04B7/0452 ,  H04B7/0465 ,  H04J11/0023 ,  H04W52/0238 ,  H04W52/0274 ,  Y02D70/00 ,  Y02D70/122 ,  Y02D70/1244 ,  Y02D70/1246 ,  Y02D70/1262 ,  Y02D70/1264 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/164 ,  Y02D70/168 ,  Y02D70/26 ,  Y02D70/444

Abstract: A method of canceling interference by a signal receiving apparatus in a communication system supporting a multi-user Multiple-Input Multiple-Output (MIMO) scheme and a signal receiving apparatus is provided. The method includes determining whether there is a need for using an interference cancellation scheme while performing a signal detecting operation; and performing the signal detecting operation using the interference cancellation scheme, or performing the signal detecting operation without using the interference cancellation scheme based on determining whether there is the need for using the interference cancellation scheme.

公开(公告)号：US09287159B2

公开(公告)日：2016-03-15

申请号：US14751011

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul Kim ,  Jae-Seok Kim ,  Chan-Hong Park

IPC: H01L29/78 ,  H01L21/762 ,  H01L27/108 ,  H01L29/423 ,  H01L21/285 ,  H01L21/311 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。

公开(公告)号：US08989296B2

公开(公告)日：2015-03-24

申请号：US14012372

申请日：2013-08-28

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Ji-Hun Koo ,  Jang-Yong Park ,  Min-Joon Kim ,  Jae-Seok Kim ,  Hyun-Sub Kim

IPC: H04B7/02 ,  H04B7/04

CPC classification number: H04B7/0456 ,  H04B7/0452 ,  H04B7/0691 ,  H04B7/086

Abstract: A method of operating a wireless local area network (WLAN) station. The WLAN station receives at least one desired signal and at least one interference signal from an access point (AP) capable of simultaneously transmitting desired signals to multiple WLAN stations. The method includes estimating a channel and generating a channel matrix estimated based on the estimated channel, separating a channel matrix of the desired signal and a channel matrix of the interference signal from the estimated channel matrix, generating the matrix of a virtual channel by combining the separated channel matrixes, and executing a sphere decoding (SD) algorithm using the matrix of the virtual channel.Or, separating a desired signal and an interference signal from the stream signal based on the analysis result, ascertaining a modulation scheme of the interference signal, and setting the ascertained modulation scheme of the interference signal as decreased lattice points.

Abstract translation: 一种操作无线局域网（WLAN）站的方法。 WLAN站从接收点（AP）接收至少一个期望信号和至少一个干扰信号，接入点能够同时向多个WLAN站发送所需信号。 该方法包括：估计信道并生成基于所估计的信道估计的信道矩阵，从所估计的信道矩阵中分离所需信号的信道矩阵和干扰信号的信道矩阵，通过组合所述信道矩阵生成虚拟信道的矩阵 分离的信道矩阵，并且使用虚拟信道的矩阵来执行球体解码（SD）算法。 或者，基于分析结果，从流信号中分离出期望的信号和干扰信号，确定干扰信号的调制方式，并将确定的干扰信号的调制方式设定为减小的格点。

公开(公告)号：US20140061743A1

公开(公告)日：2014-03-06

申请号：US13945279

申请日：2013-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Kim ,  Jae-Seok Kim ,  Chan-Hong Park

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L27/10876 ,  H01L27/10891

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate, a device isolation layer defining one or more active regions at the substrate, and one or more gate lines buried in the substrate. Each of the gate lines comprises a first portion on the device isolation layer and a second portion on an active region of the active regions. A top surface of the first portion is lower than a top surface of the second portion.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括衬底，在衬底上限定一个或多个有源区的器件隔离层和埋在衬底中的一个或多个栅极线。 每个栅极线包括器件隔离层上的第一部分和有源区的有源区上的第二部分。 第一部分的顶表面比第二部分的顶表面低。