公开(公告)号：US20180358555A1

公开(公告)日：2018-12-13

申请号：US16010447

申请日：2018-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  ILMOK PARK ,  Junhee LIM

IPC: H01L45/00 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C13/00 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/1157

CPC classification number: H01L45/1233 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C13/0004 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144

Abstract: Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

公开(公告)号：US20180358070A1

公开(公告)日：2018-12-13

申请号：US15965830

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOONJONG SONG ,  KILHO LEE ,  DAEEUN JEONG

IPC: G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Disclosed are a magnetic memory device and a method of fabricating the same. The magnetic memory device comprises a bottom electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on the bottom electrode, and a top electrode on the magnetic tunnel junction pattern. The bottom electrode comprises a first bottom electrode and a second bottom electrode on the first bottom electrode. Each of the first and second bottom electrodes comprises metal nitride. The first bottom electrode has a crystallinity higher than that of the second bottom electrode.

公开(公告)号：US20250098176A1

公开(公告)日：2025-03-20

申请号：US18608130

申请日：2024-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KILHO LEE

IPC: H10B61/00

Abstract: A magnetic memory device may include conductive lines provided in cell region and peripheral region, a first insulating layer provided in the cell region and the peripheral region, and surrounding the conductive lines, a second insulating layer provided on the first insulating layer in the cell region and the peripheral region, and on top surfaces of the conductive lines, and data storage patterns provided on the second insulating layer in the cell region and electrically connected to corresponding conductive lines of the conductive lines. The second insulating layer in the peripheral region may include first portions on the top surfaces of the conductive lines, and second portions disposed between the first portions. Top surfaces of the first portions may be disposed at a level higher than top surfaces of the second portions.

公开(公告)号：US20200083429A1

公开(公告)日：2020-03-12

申请号：US16202360

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  YOONJONG SONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices are provided. The MRAM devices may include a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction and a conductive layer adjacent to the free layer of the MTJ. The conductive layer may include a horizontal portion and first and second protruding portions that protrude away from the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction. A side of the free layer and a side of the horizontal portion may form a straight side.