公开(公告)号：US20230328986A1

公开(公告)日：2023-10-12

申请号：US18070536

申请日：2022-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghoon KWON ,  Chungki MIN ,  Boun YOON ,  Kihoon JANG

IPC: H10B43/27 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H10B41/27 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11556

Abstract: A semiconductor device includes a source structure, first and second stack structures, including first gate electrodes stacked on the source structure to be spaced apart from each other; a dummy structure on the source structure between the first and the second stack structures, and including second gate electrodes stacked to be spaced apart from each other; first separation regions passing through the first and second stack structures, and spaced apart from each other; second separation regions extending between each of the first and second stack structures and the dummy structure; channel structures passing through the first and second stack structures, and respectively including a channel layer, connected to the source structure through the channel layer; and first source contact structures passing through the dummy structure, and respectively including a first contact layer connected to the source structure through a lower surface of the first contact layer.

公开(公告)号：US20230328987A1

公开(公告)日：2023-10-12

申请号：US18150415

申请日：2023-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon KWON ,  Boun YOON ,  Kihoon JANG

IPC: H10B43/27 ,  H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H01L23/528 ,  H10B43/10

CPC classification number: H10B43/27 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A semiconductor device includes a first semiconductor structure including a first substrate and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure includes gate electrodes stacked on the second substrate, interlayer insulating layers alternately stacked with the gate electrodes, through-insulating regions passing through the gate electrodes in a second region, a capping insulating layer covering the gate electrodes and the interlayer insulating layers, an upper insulating layer on the capping insulating layer, channel structures passing through the capping insulating layer and the gate electrodes in a first region, upper contact plugs passing through the upper insulating layer, bit lines on the upper insulating layer, first contact plugs passing through the capping insulating layer, and conductive patterns including second contact plugs passing through each of the through-insulating regions in the second region. The conductive patterns include connection portions integral with the second contact plugs.

公开(公告)号：US20230381913A1

公开(公告)日：2023-11-30

申请号：US18100937

申请日：2023-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghoon KWON ,  Boun YOON ,  Kihoon JANG

IPC: B24B37/015 ,  B24B37/04 ,  H01L21/321

CPC classification number: B24B37/015 ,  B24B37/042 ,  H01L21/3212

Abstract: A substrate processing apparatus includes a polishing platen including a fluid channel, a polishing pad provided on a first surface of the polishing platen, the polishing pad including a pad body including a trench and a thermal conductive body provided in the trench of the pad body and connected to the first surface of the polishing platen, and a polishing head provided on the polishing pad and configured to support a substrate.

公开(公告)号：US20200319307A1

公开(公告)日：2020-10-08

申请号：US16840037

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd. ,  Samsung Electro-Mechanics Co., Ltd.

Inventor： Jaeyoung HUH ,  Kyungwan PARK ,  Jungho BAE ,  Boram KIM ,  Youngjin KIM ,  Hyun KIM ,  Byeonghoon PARK ,  Yoonsun PARK ,  Woontahk SUNG ,  Kyungwoo LEE ,  Kihoon JANG ,  Younho CHOI

IPC: G01S7/481 ,  G03B17/55 ,  H01S5/024 ,  H01S5/022 ,  H05K5/00 ,  H05K1/02 ,  H05K1/14 ,  H05K7/20 ,  G01S17/10

Abstract: An electronic device including a heat-radiant structure of a camera is provided. The electronic device includes a housing including a front plate facing a first direction and a back plate facing a second direction opposite to the first direction, an image sensor to receive light through a first region of the back plate, the image sensor disposed inside the housing, a laser emitter to emit light through a second region of the back plate, adjacent to the first region, the laser emitter disposed inside the housing, adjacent to the image sensor, a laser driver disposed between the laser emitter and the front plate, a housing structure surrounding at least a part of a side face of the image sensor and driver, a first metal structure disposed between the laser emitter and the laser driver, a first heat transfer member including a first portion disposed between the first metal structure and the driver, a second portion extended from the first portion along an outer face of the housing structure, and a third portion extended from the second portion to a space between the driver and the front plate, while in contact with the first metal structure, a second heat transfer member extended from the third portion of the first heat transfer member, and a first Thermal Interface Material (TIM) disposed between the second heat transfer member and the front plate, the first TIM being in contact with the second heat transfer member.