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公开(公告)号:US12238925B2
公开(公告)日:2025-02-25
申请号:US18143756
申请日:2023-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ik-Joon Choi , Kihyun Kim , Sungchul Park , Minjun Kim , Junhyung Kim
IPC: H10B12/00 , G11C11/408
Abstract: A semiconductor memory device includes n physical banks, each of which is configured to be entirely or partially included in one of a first logic bank or a second logic bank and arranged in a row direction, wherein n is an integer that is greater than or equal to 3, and wherein a proportion of a sum of respective widths of the n physical banks in the row direction to a height of the n physical banks in a column direction is a real number multiple that is not a multiple of 2.
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公开(公告)号:US12135504B2
公开(公告)日:2024-11-05
申请号:US17528637
申请日:2021-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kihyun Kim
IPC: G03F7/00
Abstract: A method for determining a best focus and a best dose in the disclosure includes selecting a selection pattern from first and second shot regions of a wafer for split, measuring a critical dimension (CD) value of the selection pattern, thereby deriving a measurement CD value, calculating an effective CD value of the selection pattern for each of the first and second shot regions using the measurement CD value, calculating an upper-limit CD value and a lower-limit CD value of the selection pattern using the effective CD value of the selection pattern, calculating a process window area for the first shot region and a process window area for the second shot region using the upper-limit CD value and the lower-limit CD value of the selection pattern, and comparing the process window area for the first shot region and the process window area for the second shot region with each other.
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公开(公告)号:US11871571B2
公开(公告)日:2024-01-09
申请号:US17517137
申请日:2021-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC: H10B43/27 , H10B43/10 , H10B43/20 , H10B43/50 , H01L23/498 , H01L23/535 , H01L29/40 , H01L29/423 , H01L23/522
CPC classification number: H10B43/27 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L29/408 , H01L29/4234 , H10B43/10 , H10B43/20 , H10B43/50 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号:US11476710B2
公开(公告)日:2022-10-18
申请号:US16929581
申请日:2020-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mincheol Ha , Kwangseob Kim , Kihyun Kim , Dongzo Kim , Jihye Kim , Yunjeong Noh , Changhak O , Kyungmin Lee , Hyungkoo Chung
Abstract: An electronic device according to an embodiment may include: a wireless charging coil; a power transmission circuit configured to be electrically connected to the wireless charging coil; a wireless communication circuit configured to communicate with an external electronic device; and a control circuit. The control circuit may be configured to: transmit power to an external electronic device; obtain data corresponding to power received by the external electronic device in response to the transmitted power using the wireless communication circuit; obtain power loss based on the obtained data; stop transmitting the power to the external electronic device when the power loss exceeds a first threshold; and stop transmitting the power to the external electronic device according to whether an event related the power loss occurs even when the power loss is lower than the first threshold.
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公开(公告)号:US11456625B2
公开(公告)日:2022-09-27
申请号:US16936496
申请日:2020-07-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangseob Kim , Changhak O , Kihyun Kim , Dongzo Kim , Jihye Kim , Yunjeong Noh , Kyungmin Lee , Hyungkoo Chung , Mincheol Ha
Abstract: According to certain embodiments, a power transmission device comprises an induction circuit configured to transmit a wireless power signal through a charging pad and receive a signal from an external device; and at least one processor operatively connected to the induction circuit, wherein the processor is configured to: enter a wireless charging protection mode for wireless charging of the external device, measure a current value of the wireless power signal, and release the wireless charging protection mode when the packet information is not included in the signal transmitted from the external device and the measured current value or variation of the current value exceeds a threshold value.
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公开(公告)号:US11451074B2
公开(公告)日:2022-09-20
申请号:US16880260
申请日:2020-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kihyun Kim , Kyungha Koo , Wooram Lee , Changhyung Lee , Jihye Kim , Jihong Kim , Yunjeong Noh , Seho Park , Kumjong Sun , Ju-Hyang Lee , Mincheol Ha , Sangmoo Hwangbo
Abstract: An electronic device is provided. The electronic device includes a housing, a wireless charging coil disposed inside the housing, a fan disposed inside the housing and in proximity to the coil, a temperature sensor disposed inside the housing and in proximity to the coil, a wireless charging circuit having the coil and configured to transmit power wirelessly to an external device via the coil, and a control circuit electrically connected to the fan, the temperature sensor, and the wireless charging circuit. The control circuit may be configured to receive a signal from the external device, receive data related to a temperature of the coil from the temperature sensor, and control the fan at least partially on the basis of at least one of the signal and the data.
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公开(公告)号:US11387249B2
公开(公告)日:2022-07-12
申请号:US16708482
申请日:2019-12-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC: H01L27/11582 , H01L27/11578 , H01L27/11575 , H01L23/498 , H01L23/535 , H01L29/40 , H01L29/423 , H01L23/522 , H01L27/11565
Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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公开(公告)号:US10468732B2
公开(公告)日:2019-11-05
申请号:US15149445
申请日:2016-05-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kihyun Kim , Myungjin Lee , Heungchan Lee , Dongjoon Lee , Hyunpyo Lee , Dongmin Im
IPC: H01M12/06 , H01M10/0525 , H01M10/0565
Abstract: A polymer electrolyte including: a polymer matrix including a cross-linked fluorine-containing polymer; and a liquid electrolyte embedded in the polymer matrix.
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公开(公告)号:US10270114B2
公开(公告)日:2019-04-23
申请号:US15161682
申请日:2016-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongjoon Lee , Eunha Park , Kihyun Kim , Taeyoung Kim , Victor Roev , Hyunpyo Lee , Heungchan Lee , Dongmin Im
IPC: H01M8/1016 , C07C211/63 , C07C311/48 , H01M12/08 , H01M10/0569 , H01M8/1018
Abstract: An electrolyte for a lithium air battery includes a compound represented by Formula 1 wherein the definitions of A and R1-R10 are disclosed herein. Also a lithium air battery including an anode, a cathode, and at least one selected from the herein-described electrolyte and a reaction product thereof.
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公开(公告)号:US09856341B2
公开(公告)日:2018-01-02
申请号:US14732941
申请日:2015-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myungjin Lee , Kihyun Kim , Hyorang Kang , Jirae Kim
IPC: C08F220/28 , H01M10/0525 , H01M10/0565 , H01M10/0567 , H01M10/0568
CPC classification number: C08F220/28 , H01M10/0525 , H01M10/0565 , H01M10/0567 , H01M10/0568 , H01M2220/20 , H01M2220/30 , H01M2300/0082 , Y02E60/122 , C08F2220/282 , C08F2220/585
Abstract: A polymer including a first repeating unit represented by Formula 1, a second repeating unit represented by Formula 2, and a third repeating unit: wherein R1 to R3, X, and Rf in Formula 1 and R4 to R6, R, and a in Formula 2 are the same as those defined in the detailed description, and wherein the polymer has a glass transition temperature of about 25° C. or less or a Young's modulus of about 10 megaPascals or greater.
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