公开(公告)号：US10256399B2

公开(公告)日：2019-04-09

申请号：US15157834

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.

公开(公告)号：US20170338404A1

公开(公告)日：2017-11-23

申请号：US15157834

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.

公开(公告)号：US12080459B2

公开(公告)日：2024-09-03

申请号：US17847099

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun Ryu ,  Seungjae Lee ,  Naoki Hase ,  Kwangseok Kim

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3272 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20240147868A1

公开(公告)日：2024-05-02

申请号：US18178103

申请日：2023-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soichiro MIZUSAKI ,  Kwangseok Kim ,  Jeongchun Ryu ,  Atsushi Okada

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.

公开(公告)号：US12150387B2

公开(公告)日：2024-11-19

申请号：US17982955

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok Kim ,  Seonggeon Park ,  Seungjae Lee ,  Naoki Hase

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US12052930B2

公开(公告)日：2024-07-30

申请号：US17701056

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok Kim ,  Seonggeon Park ,  Seungjae Lee ,  Naoki Hase

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US09923138B2

公开(公告)日：2018-03-20

申请号：US15375734

申请日：2016-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hwan Park ,  Kwangseok Kim ,  Keewon Kim ,  Jae Hoon Kim ,  Joonmyoung Lee

IPC: H01L43/08 ,  H01L29/82 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A memory device includes a magnetic tunnel junction comprising a first free layer, a pinned layer, and a tunnel barrier layer disposed between the first free layer and the pinned layer, wherein the first free layer comprises a first free magnetic pattern adjacent to the tunnel barrier layer, and a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, wherein the second free magnetic pattern contacts the first free magnetic pattern, wherein the first and second free magnetic patterns include boron (B), wherein a boron content of the first free magnetic pattern is higher than a boron content of the second free magnetic pattern, and wherein the boron content of the first free magnetic pattern is in a range of about 25 at % to about 50 at %.

公开(公告)号：US09859488B2

公开(公告)日：2018-01-02

申请号：US15466802

申请日：2017-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Kwangseok Kim ,  Ki Woong Kim ,  Whankyun Kim ,  Sang Hwan Park

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.

公开(公告)号：US20170338402A1

公开(公告)日：2017-11-23

申请号：US15157795

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer on the non-magnetic barrier layer and the magnetic free layer on the non-magnetic barrier layer, forming an oxide cap layer on the magnetic free layer, and forming a noble metal cap layer on the oxide cap layer.

公开(公告)号：US09799823B1

公开(公告)日：2017-10-24

申请号：US15094059

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Junghyuk Lee ,  Luqiao Liu ,  Jeong-Heon Park

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.