Memory modules including a mirroring circuit and methods of operating the same

    公开(公告)号:US11631437B2

    公开(公告)日:2023-04-18

    申请号:US17344235

    申请日:2021-06-10

    Abstract: A memory module is provided including a plurality of semiconductor memory devices mounted on a circuit board. A control device is mounted on the circuit board and configured to receive a command signal, an address signal, and a clock signal and to provide the command signal, the address signal, and the clock signal to the plurality of semiconductor memory devices. A first group of the semiconductor memory devices is disposed between the control device and a first edge portion of the circuit board, and a second group of the semiconductor memory devices is disposed between the control device and a second edge portion of the circuit board. The control device is configured to transmit the address signal to the first group of the semiconductor memory devices and the second group of the semiconductor memory devices through a first transmission line and a second transmission line, respectively. The first transmission line and the second transmission line are physically symmetric with respect to an axis intersecting the control device.

    MEMORY MODULE AND MEMORY SYSTEM HAVING THE SAME

    公开(公告)号:US20200342917A1

    公开(公告)日:2020-10-29

    申请号:US16709984

    申请日:2019-12-11

    Abstract: A memory module includes a serial presence detector (SPD) configured to detect a module identification (ID) through at least one module position identification terminal, and generate at least one of the module ID and a register address corresponding to the module ID. A power management unit (PMU) is responsive to at least one of the module ID and the register address generated by the SPD. The PMU is configured to set an on-time point and/or an off-time point of an internal clock signal based on at least one of the module ID and the register address corresponding to the module ID, and further configured to generate at least one internal power supply voltage in response to the internal clock signal. A plurality of memory devices are also provided, which are configured to receive the at least one internal power supply voltage and perform an operation in response to command/address signals.

    SEMICONDUCTOR MEMORY MODULES INCLUDING POWER MANAGEMENT INTEGRATED CIRCUITS

    公开(公告)号:US20200335140A1

    公开(公告)日:2020-10-22

    申请号:US16727066

    申请日:2019-12-26

    Abstract: A semiconductor memory module includes a memory printed circuit board (PCB) that includes first connectors, a second connector, and a third connector configured to be connectable with an external device, memory devices that are mounted on the memory PCB and are connected with the first connectors, and a power management integrated circuit that is mounted on the memory PCB, receives a first voltage through the second connector, generates a second voltage from the first voltage, and supplies the second voltage to the memory devices. The power management integrated circuit adjusts the second voltage depending on a difference between a signal received through the third connector and the second voltage.

    MEMORY MODULE AND MEMORY SYSTEM HAVING THE SAME

    公开(公告)号:US20230035640A1

    公开(公告)日:2023-02-02

    申请号:US17938780

    申请日:2022-10-07

    Abstract: A memory module includes a serial presence detector (SPD) configured to detect a module identification (ID) through at least one module position identification terminal, and generate at least one of the module ID and a register address corresponding to the module ID. A power management unit (PMU) is responsive to at least one of the module ID and the register address generated by the SPD. The PMU is configured to set an on-time point and/or an off-time point of an internal clock signal based on at least one of the module ID and the register address corresponding to the module ID, and further configured to generate at least one internal power supply voltage in response to the internal clock signal. A plurality of memory devices are also provided, which are configured to receive the at least one internal power supply voltage and perform an operation in response to command/address signals.

    Memory modules including a mirroring circuit and methods of operating the same

    公开(公告)号:US11043246B2

    公开(公告)日:2021-06-22

    申请号:US16733803

    申请日:2020-01-03

    Abstract: A memory module is provided including a plurality of semiconductor memory devices mounted on a circuit board. A control device is mounted on the circuit board and configured to receive a command signal, an address signal, and a clock signal and to provide the command signal, the address signal, and the clock signal to the plurality of semiconductor memory devices. A first group of the semiconductor memory devices is disposed between the control device and a first edge portion of the circuit board, and a second group of the semiconductor memory devices is disposed between the control device and a second edge portion of the circuit board. The control device is configured to transmit the address signal to the first group of the semiconductor memory devices and the second group of the semiconductor memory devices through a first transmission line and a second transmission line, respectively. The first transmission line and the second transmission line are physically symmetric with respect to an axis intersecting the control device.

    Memory modules including a mirroring circuit and methods of operating the same

    公开(公告)号:US12027225B2

    公开(公告)日:2024-07-02

    申请号:US18109338

    申请日:2023-02-14

    CPC classification number: G11C5/04 G11C11/4074 G11C16/10 G11C16/30

    Abstract: A memory module is provided including a plurality of semiconductor memory devices mounted on a circuit board. A control device is mounted on the circuit board and configured to receive a command signal, an address signal, and a clock signal and to provide the command signal, the address signal, and the clock signal to the plurality of semiconductor memory devices. A first group of the semiconductor memory devices is disposed between the control device and a first edge portion of the circuit board, and a second group of the semiconductor memory devices is disposed between the control device and a second edge portion of the circuit board. The control device is configured to transmit the address signal to the first group of the semiconductor memory devices and the second group of the semiconductor memory devices through a first transmission line and a second transmission line, respectively. The first transmission line and the second transmission line are physically symmetric with respect to an axis intersecting the control device.

    Semiconductor memory modules including power management integrated circuits

    公开(公告)号:US10998012B2

    公开(公告)日:2021-05-04

    申请号:US16727066

    申请日:2019-12-26

    Abstract: A semiconductor memory module includes a memory printed circuit board (PCB) that includes first connectors, a second connector, and a third connector configured to be connectable with an external device, memory devices that are mounted on the memory PCB and are connected with the first connectors, and a power management integrated circuit that is mounted on the memory PCB, receives a first voltage through the second connector, generates a second voltage from the first voltage, and supplies the second voltage to the memory devices. The power management integrated circuit adjusts the second voltage depending on a difference between a signal received through the third connector and the second voltage.

Patent Agency Ranking