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公开(公告)号:US20230408574A1
公开(公告)日:2023-12-21
申请号:US18240957
申请日:2023-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Meehyun Lim , Sungyeol Kim , Hyungjung Yong , Jinyeong Yun
IPC: G01R31/28 , H01L25/065 , H01L23/00
CPC classification number: G01R31/2803 , H01L25/0657 , H01L24/14 , G01R31/2815
Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.
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公开(公告)号:US20230194591A1
公开(公告)日:2023-06-22
申请号:US17975202
申请日:2022-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/687 , H01L21/683 , H01L21/66
CPC classification number: G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US20250004028A1
公开(公告)日:2025-01-02
申请号:US18884376
申请日:2024-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US20240055243A1
公开(公告)日:2024-02-15
申请号:US18124954
申请日:2023-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taekjin Kim , Meehyun Lim , Sungyeol Kim , Junbum Park , Sungyoung Yoon , Jinyeong Yun , Jungchul Lee , Sungyong Lim , Sunghwi Cho
IPC: H01J37/32 , H01L21/67 , H01L21/683
CPC classification number: H01J37/32972 , H01L21/67253 , H01L21/67069 , H01L21/6833 , H01J2237/24495
Abstract: A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.
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公开(公告)号:US12235287B2
公开(公告)日:2025-02-25
申请号:US17930819
申请日:2022-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daesung Jung , Myeongock Ko , Meehyun Lim
Abstract: A substrate processing apparatus includes: a chamber configured to perform a wet process and having an internal space, a chuck in the internal spaced and being configured for loading a semiconductor substrate thereon, a probe having an end above the chuck and including an electro-optical crystal and a reflective mirror on one surface of the electro-optical crystal, a measuring unit connected to the probe and configured to provide reference light to the probe, and to detect a polarization component of reflected light reflected from the one end of the probe by the reference light, and a controller configured to calculate an amount of electrostatic charge on a surface of the semiconductor substrate from the polarization component.
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公开(公告)号:US20230168278A1
公开(公告)日:2023-06-01
申请号:US17930819
申请日:2022-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daesung Jung , Myeongock Ko , Meehyun Lim
IPC: G01R1/07 , H01L21/683 , G02B27/28
CPC classification number: G01R1/071 , H01L21/6833 , G02B27/283
Abstract: A substrate processing apparatus includes: a chamber configured to perform a wet process and having an internal space, a chuck in the internal spaced and being configured for loading a semiconductor substrate thereon, a probe having an end above the chuck and including an electro-optical crystal and a reflective mirror on one surface of the electro-optical crystal, a measuring unit connected to the probe and configured to provide reference light to the probe, and to detect a polarization component of reflected light reflected from the one end of the probe by the reference light, and a controller configured to calculate an amount of electrostatic charge on a surface of the semiconductor substrate from the polarization component.
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公开(公告)号:US12170233B2
公开(公告)日:2024-12-17
申请号:US17394471
申请日:2021-08-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Meehyun Lim , Sung-Yeol Kim , Sunghyup Kim , Hyung-Jung Yong , Hosun Yoo
IPC: H01J1/00 , G01N21/25 , G01N21/27 , G01N21/3504 , G01N21/3586 , H01J37/32 , H01L21/66 , H01L21/683
Abstract: A plasma treatment apparatus includes a light generator that generates light, a chamber that receives the light generated from the light generator, an optical element provided between the light generator and the chamber, a light detector that detects the light reflected in the chamber, and a controller connected to the light generator and the light detector. The chamber includes an electrostatic chuck provided in a lower portion of the chamber, an edge ring provided around the electrostatic chuck, an outer wall for sealing an inner space of the chamber, and a gas supply that injects a process gas into the chamber. The optical element branches the generated light to irradiate branched light to different regions of the chamber.
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公开(公告)号:US12105132B2
公开(公告)日:2024-10-01
申请号:US17975202
申请日:2022-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
CPC classification number: G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US11782085B2
公开(公告)日:2023-10-10
申请号:US16924971
申请日:2020-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Meehyun Lim , Sungyeol Kim , Hyungjung Yong , Jinyeong Yun
IPC: G01R31/28 , H01L23/00 , H01L25/065
CPC classification number: G01R31/2803 , G01R31/2815 , H01L24/14 , H01L25/0657
Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.
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公开(公告)号:US20210156904A1
公开(公告)日:2021-05-27
申请号:US16924971
申请日:2020-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Meehyun Lim , Sungyeol Kim , Hyungjung Yong , Jinyeong Yun
IPC: G01R31/28 , H01L23/00 , H01L25/065
Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.
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