SEMICONDUCTOR NANOPARTICLE, PRODUCTION METHOD THEREOF, AND ELECTROLUMINESCENT DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20230235220A1

    公开(公告)日:2023-07-27

    申请号:US18159871

    申请日:2023-01-26

    IPC分类号: C09K11/70 H10K50/115

    CPC分类号: C09K11/70 H10K50/115

    摘要: An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and



    wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.

    METHODS OF GRINDING SEMICONDUCTOR NANOCRYSTAL POLYMER COMPOSITE PARTICLES
    3.
    发明申请
    METHODS OF GRINDING SEMICONDUCTOR NANOCRYSTAL POLYMER COMPOSITE PARTICLES 有权
    研磨半导体纳米聚合物复合颗粒的方法

    公开(公告)号:US20150041715A1

    公开(公告)日:2015-02-12

    申请号:US14453723

    申请日:2014-08-07

    IPC分类号: C09K11/02 B24B1/00

    CPC分类号: C09K11/025 B24B1/00 C09K11/70

    摘要: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

    摘要翻译: 一种研磨半导体纳米晶体 - 聚合物复合材料的方法,该方法包括获得包含半导体纳米晶体和第一聚合物的半导体纳米晶体 - 聚合物复合物,使半导体纳米晶体 - 聚合物复合材料与惰性有机溶剂接触; 并在惰性有机溶剂存在下研磨半导体纳米晶体 - 聚合物复合物,研磨半导体纳米晶体 - 聚合物复合材料。

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240074222A1

    公开(公告)日:2024-02-29

    申请号:US18240451

    申请日:2023-08-31

    摘要: An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.

    LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME AND DISPLAY DEVICE INCLUDING SAME

    公开(公告)号:US20230043694A1

    公开(公告)日:2023-02-09

    申请号:US17944394

    申请日:2022-09-14

    IPC分类号: H01L51/50 H01L51/52 H01L51/56

    摘要: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

    ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

    公开(公告)号:US20210226172A1

    公开(公告)日:2021-07-22

    申请号:US17226158

    申请日:2021-04-09

    摘要: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

    QUANTUM DOT DEVICE AND DISPLAY DEVICE
    8.
    发明申请

    公开(公告)号:US20190157596A1

    公开(公告)日:2019-05-23

    申请号:US16034442

    申请日:2018-07-13

    IPC分类号: H01L51/50 H01L51/52 H01L51/56

    摘要: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.