公开(公告)号：US20130078547A1

公开(公告)日：2013-03-28

申请号：US13680021

申请日：2012-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jung PARK ,  Sang-mock LEE ,  Chan KWAK

IPC: B29B9/12 ,  H01M8/12

CPC classification number: B29B9/12 ,  B82Y30/00 ,  B82Y40/00 ,  C01G25/02 ,  C01G53/006 ,  C01G53/04 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/17 ,  C01P2006/40 ,  H01M4/9025 ,  H01M8/12 ,  H01M8/124 ,  H01M2004/8684 ,  Y02P70/56

Abstract: A nano-composite, including: a plurality of secondary particles, each secondary particle including a mixture of nano-size primary particles, wherein the mixture of nano-size primary particles includes particles including a nickel oxide or a copper oxide, and particles including zirconia doped with a trivalent metal element or ceria doped with a trivalent metal element, and wherein the nano-size primary particles define a plurality of nano-pores.

Abstract translation: 一种纳米复合材料，包括：多个二次粒子，每个二次粒子包括纳米尺寸一次粒子的混合物，其中所述纳米尺寸一次粒子的混合物包括包含氧化镍或氧化铜的粒子，以及包含氧化锆的粒子 掺杂有掺杂有三价金属元素的三价金属元素或二氧化铈，并且其中所述纳米尺寸的一次粒子限定多个纳米孔。

公开(公告)号：US20170186931A1

公开(公告)日：2017-06-29

申请号：US15461546

申请日：2017-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jong-soo RHYEE ,  Sang-mock LEE

IPC: H01L35/28 ,  H01L35/26 ,  H01L35/16

CPC classification number: H01L35/28 ,  C01B19/002 ,  C01G3/00 ,  C01G15/006 ,  C01G17/006 ,  C01G19/006 ,  C01G28/002 ,  C01G29/006 ,  C01P2006/32 ,  C01P2006/40 ,  H01L35/16 ,  H01L35/26 ,  Y02P20/129 ,  Y02P20/13

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn   (1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

公开(公告)号：US20150001436A1

公开(公告)日：2015-01-01

申请号：US14156536

申请日：2014-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jung PARK ,  Chan KWAK ,  Tae-gon KIM ,  Sang-mock LEE ,  Doh-won JUNG

IPC: G01N27/407 ,  C01G17/00 ,  H01M10/0562 ,  H01M6/40 ,  G01N27/404 ,  H01M8/10

CPC classification number: C01G17/006 ,  C01G45/006 ,  C01P2002/72 ,  C01P2006/40 ,  H01M8/1246 ,  H01M10/052 ,  H01M10/0562 ,  H01M2008/1293 ,  H01M2300/0071 ,  Y02E60/521 ,  Y02E60/525 ,  Y02P70/56

Abstract: An oxide represented by Formula 1: (Sr2-xAx)(M1-yQy)D2O7+d,   Formula 1 wherein A is barium (Ba), M is at least one selected from magnesium (Mg) and calcium (Ca), Q is a Group 13 element, D is at least one selected from silicon (Si) and germanium (Ge), 0≦x≦2.0, 0

Abstract translation: 由式1表示的氧化物：（Sr2-xAx）（M1-yQy）D2O7 + d，其中A是钡（Ba），M是选自镁（Mg）和钙（Ca）中的至少一种，Q是 第13族元素，D为选自硅（Si）和锗（Ge）中的至少一种，0和nlE; x和nlE; 2.0,0 <0≤n1; 1.0，d是使氧化物电中性的值。

公开(公告)号：US20130298729A1

公开(公告)日：2013-11-14

申请号：US13783559

申请日：2013-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Sang-mock LEE ,  Kyu-hyoung LEE ,  Sung-ho JIN ,  Ami BERKOWITZ

IPC: H01L35/18 ,  B22F9/14 ,  H01L35/34 ,  C22C12/00

CPC classification number: H01L35/18 ,  B22F9/14 ,  B82Y30/00 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/50 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/51 ,  C01P2004/64 ,  C01P2006/40 ,  C22C1/04 ,  C22C12/00 ,  C22C28/00 ,  H01L35/16 ,  H01L35/34 ,  Y10S977/901 ,  Y10S977/932 ,  Y10T428/12 ,  Y10T428/2982 ,  Y10T428/2989

Abstract: A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material; applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; and cooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles.

Abstract translation: 一种制备热电材料颗粒的方法，所述方法包括：将第一电极和第二电极设置在电介质液体介质中，其中所述第一和第二电极各自包括热电材料; 在所述第一和第二电极之间施加电位以在所述第一和第二电极之间引起火花以在所述第一和第二电极中的至少一个的火花点提供蒸发的热电材料; 并用电介质液体介质冷却蒸发的热电材料以制备热电材料颗粒。

公开(公告)号：US20150024238A1

公开(公告)日：2015-01-22

申请号：US14150317

申请日：2014-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-min KANG ,  Kyung-han AHN ,  Sang-mock LEE

IPC: G11B5/667 ,  G11B5/64 ,  G11B5/65

CPC classification number: G11B5/667 ,  G11B5/653 ,  G11B5/7325 ,  H01F10/3222

Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract translation: 硬磁交换耦合复合结构和包括硬磁交换耦合复合结构的垂直磁记录介质包括铁氧体晶粒和与原子尺度界面键合在铁素体晶粒上的软磁金属薄膜，并具有 约5nm或更小的厚度，其中与铁素体晶粒的界面相邻的软磁金属薄膜的区域包括非晶软磁金属膜。

公开(公告)号：US20140096809A1

公开(公告)日：2014-04-10

申请号：US14048236

申请日：2013-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-il KIM ,  Sung-woo HWANG ,  Sang-mock LEE ,  Kyu-hyoung LEE ,  Vilius MYKHAILOVSKY ,  Roman MOCHERNYUK

IPC: H01L35/26 ,  H01L35/34

CPC classification number: H01L35/26 ,  H01L35/16 ,  H01L35/34

Abstract: A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1: (A1-aA′a)4-x(B1-bB′b)3-y-zCz  Formula 1 wherein A and A′ are different from each other, A is a Group 13 element, and A′ is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B′ are different from each other, B is a Group 16 element, and B′ is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0≦a

Abstract translation: 一种热电装置，包括：包含热电材料的热电材料层; 热电材料上的过渡层; 以及所述过渡层上的扩散防止层，其中所述热电材料包含式1的化合物：（A1-aA'a）4-x（B1-bBb）3-y-zCz式1其中A和A' 彼此不同，A是13族元素，A'是第13族元素，第14族元素，稀土元素或过渡金属中的至少一种元素，B和B'不同于 B是16族元素，B'是14族元素，15族元素或16族元素中的至少一种元素，C是至少一个卤素原子，符合不等式0＆lt; nlE; a <1，b符合不等式0＆nlE; b <1，x符合不等式-1

公开(公告)号：US20150024236A1

公开(公告)日：2015-01-22

申请号：US14146274

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-min KANG ,  Kyung-han AHN ,  Young-jae KANG ,  Sang-mock LEE

IPC: H01F1/03

CPC classification number: H01F10/265 ,  C22C29/12 ,  C22C2202/02 ,  H01F1/11 ,  H01F1/344 ,  H01F1/346 ,  H01Q7/06 ,  Y10T428/12611 ,  Y10T428/24975 ,  Y10T428/265

Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Abstract translation: 软磁交换耦合复合结构以及包括软磁交换耦合复合结构的高频器件部件，天线模块和磁阻器件包括铁素体晶粒作为主相和软磁金属薄 膜通过原子尺度上的界面键合结合到铁素体晶粒上。 与铁素体晶粒的界面相邻的软磁性金属薄膜的区域包括结晶软磁性金属。

公开(公告)号：US20140373891A1

公开(公告)日：2014-12-25

申请号：US14306705

申请日：2014-06-17

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Kyu-hyoung LEE ,  Sang-il KIM ,  Sung-woo HWANG ,  Sung-wng KIM ,  Sang-mock LEE ,  Young-hee LEE

IPC: H01L35/32 ,  H01L35/22 ,  H01L35/16

CPC classification number: H01L35/32 ,  B82Y30/00 ,  H01L35/16

Abstract: A thermoelectric structure includes a graphene layer and a thermoelectric body disposed on the graphene layer, in which the thermoelectric body includes a thermoelectric film including a thermoelectric material, and a quantum dot disposed in the thermoelectric film.

Abstract translation: 热电结构包括设置在石墨烯层上的石墨烯层和热电体，其中热电体包括包含热电材料的热电膜和设置在热电膜中的量子点。