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公开(公告)号：US20250014664A1
公开(公告)日：2025-01-09
申请号：US18677544
申请日：2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minji Cho , Hee-Woong Kang , Jin-Young Kim , Se Hwan Park , Ji-Sang Lee , Heewon Lee , Su Chang Jeon
Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing, by the storage controller, the non-volatile memory device with a first request indicating a wordline selection operation of a target memory block, obtaining, by the non-volatile memory device, distribution information of a plurality of wordlines of the target memory block based on the first request, determining, by the non-volatile memory device, a deterioration wordline among the plurality of wordlines based on the distribution information, and providing, by the non-volatile memory device, the storage controller with wordline information indicating the deterioration wordline.
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公开(公告)号：US12165721B2
公开(公告)日：2024-12-10
申请号：US18088046
申请日：2022-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangho Choi , Jin-Young Kim , Se Hwan Park , Il Han Park , Ji-Sang Lee , Joonsuc Jang
IPC: G11C16/34 , G11C11/56 , G11C16/04 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/24 , H01L23/00 , H01L25/065 , H01L25/18
Abstract: A nonvolatile memory device includes a memory cell array having cell strings that each includes memory cells stacked on a substrate in a direction perpendicular to the substrate. A row decoder is connected with the memory cells through word lines. The row decoder applies a setting voltage to at least one word line of the word lines and floats the at least one word line during a floating time. A page buffer circuit is connected with the cell strings through bit lines. The page buffer senses voltage changes of the bit lines after the at least one word line is floated during the floating time and outputs a page buffer signal as a sensing result. A counter counts a number of off-cells in response to the page buffer signal. A detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.
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公开(公告)号：US11574692B2
公开(公告)日：2023-02-07
申请号：US17359688
申请日：2021-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangho Choi , Jin-Young Kim , Se Hwan Park , Il Han Park , Ji-Sang Lee , Joonsuc Jang
IPC: G11C16/34 , G11C11/56 , G11C16/04 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/24 , H01L25/065 , H01L25/18 , H01L23/00
Abstract: A nonvolatile memory device includes a memory cell array having cell strings that each includes memory cells stacked on a substrate in a direction perpendicular to the substrate. A row decoder is connected with the memory cells through word lines. The row decoder applies a setting voltage to at least one word line of the word lines and floats the at least one word line during a floating time. A page buffer circuit is connected with the cell strings through bit lines. The page buffer senses voltage changes of the bit lines after the at least one word line is floated during the floating time and outputs a page buffer signal as a sensing result. A counter counts a number of off-cells in response to the page buffer signal. A detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.
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公开(公告)号：US10192620B2
公开(公告)日：2019-01-29
申请号：US15816903
申请日：2017-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong Kim , Sang-Soo Park , Se Hwan Park , Sang-Wan Nam
Abstract: A nonvolatile memory device performs a method which includes: causing a ready/busy signal pin of the nonvolatile memory device to indicate that the nonvolatile memory device is in a precharge busy state wherein the nonvolatile memory device is not available to perform memory access operations for its nonvolatile memory cells; applying one or more word line precharge voltages to one or more selected word lines among a plurality of word lines of the nonvolatile memory device to precharge the selected word lines; and, after at least a portion of the precharge operation, causing the ready/busy signal pin to transition from indicating the precharge busy state, to indicating that the nonvolatile memory device is in a ready state wherein the nonvolatile memory device is available to perform memory access operations for its nonvolatile memory cells.
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公开(公告)号：US10042991B2
公开(公告)日：2018-08-07
申请号：US15257098
申请日：2016-09-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Joo Park , Se Hwan Park
IPC: G06F21/36 , G06F21/31 , H04M1/725 , G06F3/0482 , G06F3/0485 , G06F3/0488 , H04W12/06 , H04M1/665
Abstract: A method and apparatus for easily restricting a use right and improving use convenience in a mobile terminal are provided. The method includes displaying a profile list for selecting a set operation mode of the mobile terminal from the displayed profile list; setting an operation mode of the mobile terminal as the selected operation mode, when the set operation mode is selected from the displayed profile list; and displaying a screen associated with the selected operation mode, wherein the set operation mode includes an open mode to use all functions of the mobile terminal and a limited mode to use only set functions.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10176881B2
公开(公告)日：2019-01-08
申请号：US15462381
申请日：2017-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jisuk Kim , Il Han Park , Se Hwan Park
Abstract: A non-volatile memory device includes: a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and control a to compensation for the read voltage based on a read temperature offset.
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7.发明申请公开(公告)号：US20180061504A1
公开(公告)日：2018-03-01
申请号：US15462381
申请日：2017-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jisuk Kim , IL Han Park , Se Hwan Park
CPC classification number: G11C16/3459 , G11C7/04 , G11C16/0483 , G11C16/08 , G11C16/16 , G11C16/26
Abstract: A non-volatile memory device includes: a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and control a to compensation for the read voltage based on a read temperature offset.
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公开(公告)号：US12230329B2
公开(公告)日：2025-02-18
申请号：US17953003
申请日：2022-09-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunhyang Park , Joonsuc Jang , Se Hwan Park , Ji-Sang Lee
Abstract: A flash memory device includes a memory cell array connected with word lines and control logic that performs threshold voltage compensation on the word lines through a data recover read operation. When a word line on which programming is performed after a selected word line is a dummy word line, the control logic performs the threshold voltage compensation on the selected word line based on a result of a data recover read operation of a word line on which programming is performed before the selected word line. When a next word line on which programming is performed after a selected word line is a dummy word line, the control logic performs threshold voltage compensation on the selected word line based on a result of performing the data recover read operation on a previous word line on which programming is performed before the selected word line.
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公开(公告)号：US09569603B2
公开(公告)日：2017-02-14
申请号：US13655050
申请日：2012-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young Joo Park , Se Hwan Park
CPC classification number: G06F21/31 , G06F3/0482 , G06F3/0485 , G06F3/0488 , G06F21/36 , G06F2221/2149 , H04M1/665 , H04M1/72519 , H04M1/72563 , H04M2250/22 , H04W12/06
Abstract: A method and apparatus for easily restricting a use right and improving use convenience in a mobile terminal are provided. The method includes displaying a profile list for selecting a set operation mode of the mobile terminal from the displayed profile list; setting an operation mode of the mobile terminal as the selected operation mode, when the set operation mode is selected from the displayed profile list,; and displaying a screen associated with the selected operation mode, wherein the set operation mode includes an open mode to use all functions of the mobile terminal and a limited mode to use only set functions.
Abstract translation: 提供了一种用于容易地限制使用权并提高移动终端中的使用便利性的方法和装置。 该方法包括从显示的配置文件列表中显示用于选择移动终端的设置操作模式的简档列表; 当从显示的配置文件列表中选择设置的操作模式时，将移动终端的操作模式设置为所选择的操作模式; 以及显示与所选择的操作模式相关联的屏幕，其中所述设置操作模式包括使用所述移动终端的所有功能的打开模式和仅使用设置功能的限制模式。
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公开(公告)号：US12300325B2
公开(公告)日：2025-05-13
申请号：US18170893
申请日：2023-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woohyun Kang , Jin-Young Kim , Hyuna Kim , Se Hwan Park , Youngdeok Seo , Hyunkyo Oh , Heewon Lee , Donghoo Lim
Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.
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