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公开(公告)号：US20230165158A1
公开(公告)日：2023-05-25
申请号：US18051857
申请日：2022-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/08 , H01L43/02 , H01L43/10 , H01L27/222 , G11C11/161
Abstract: A magnetic memory device includes a conductive line extending in a first direction, and a magnetic track extending in the first direction on the conductive line. The magnetic track includes a lower magnetic layer, a spacer layer and an upper magnetic layer sequentially stacked on the conductive line, and a non-magnetic pattern on the spacer layer and adjacent a side of the upper magnetic layer. The non-magnetic pattern vertically overlaps with a portion of the lower magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
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公开(公告)号：US12094508B1
公开(公告)日：2024-09-17
申请号：US18509818
申请日：2023-11-15
Inventor： See-Hun Yang , Mahesh Govind Samant , Panagiotis Charilaos Filippou , Chirag Garg , Fnu Ikhtiar , Jaewoo Jeong
CPC classification number: G11C11/161 , H01F10/329 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
Abstract: Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.
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3.发明公开公开(公告)号：US20240306517A1
公开(公告)日：2024-09-12
申请号：US18179646
申请日：2023-03-07
Inventor： Chirag Garg , Panagiotis Charilaos Filippou , See-Hun Yang , Mahesh Samant , Ikhtiar , Jaewoo Jeong
CPC classification number: H10N50/85 , H01L23/5283 , H01L25/16 , H10B61/10 , H10B61/22 , H10B80/00 , H10N50/01 , H10N50/10
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and a MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure that includes a crystalline structure configured to template the Heusler compound. The first magnetic layer is formed over the templating structure. The templating structure includes a layer of a first binary alloy including platinum-aluminum (PtAl).
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Patent Agency Ranking
4.发明公开公开(公告)号：US20230413681A1
公开(公告)日：2023-12-21
申请号：US17807485
申请日：2022-06-17
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Samant , . Ikhtiar , Jaewoo Jeong
CPC classification number: H01L43/02 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.
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公开(公告)号：US20250057050A1
公开(公告)日：2025-02-13
申请号：US18231734
申请日：2023-08-08
Inventor： Mahesh Samant , Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Fnu Ikhtiar , Jaewoo Jeong , Roman Chepulskyy
Abstract: A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.
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公开(公告)号：US20230165164A1
公开(公告)日：2023-05-25
申请号：US18050600
申请日：2022-10-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/04 , H01L27/222 , H01L43/06
Abstract: A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.
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7.发明公开公开(公告)号：US20240349619A1
公开(公告)日：2024-10-17
申请号：US18218920
申请日：2023-07-06
Inventor： Jaewoo Jeong , Tiar Ikhtiar , Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Govind Samant
CPC classification number: H10N50/80 , H01F10/3254 , H01F10/3272 , H10B61/00 , H10N50/01 , H10N50/20 , H10N50/85
Abstract: A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).
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公开(公告)号：US20230165161A1
公开(公告)日：2023-05-25
申请号：US17983554
申请日：2022-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/02 , H01L27/222
Abstract: A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
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