公开(公告)号：US12063793B2

公开(公告)日：2024-08-13

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon Yang ,  Bonwon Koo ,  Segab Kwon ,  Chungman Kim ,  Yongyoung Park ,  Dongho Ahn ,  Seunggeun Yu ,  Changseung Lee

IPC: H10B63/00 ,  H01L29/24 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/24 ,  H01L29/24 ,  H10N70/245 ,  H10N70/826 ,  H10N70/8833

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20230048180A1

公开(公告)日：2023-02-16

申请号：US17872634

申请日：2022-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Segab Kwon ,  Hyoshin Ahn ,  Daesin Kim ,  Inkook Jang

IPC: H01L27/24

Abstract: A memory device includes a plurality of first conductive lines on a substrate and extending in a first direction, a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction, and a plurality of memory cells respectively between the plurality of first conductive lines and the plurality of second conductive lines. Each of the plurality of memory cells includes a switching element and a variable resistance material layer. The switching element includes a material having a composition of [GeX PY SeZ](1-W) [O]W, where 0.15≤X≤0.50, 0.15≤Y≤0.50, 0.35≤Z≤0.70, and 0.01≤W≤0.10.

公开(公告)号：US20250107461A1

公开(公告)日：2025-03-27

申请号：US18753575

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyup PARK ,  Young Jae Kang ,  DongGeon Gu ,  Bonwon Koo ,  Segab Kwon ,  Dongho Ahn ,  Changseung Lee ,  Yongnam Ham

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/00

Abstract: Provided are variable resistance materials and a variable resistance memory devices including the same. The variable resistance memory device includes: a first electrode; a first variable resistance material on the first electrode; and a second electrode on the first variable resistance material. The first variable resistance material includes germanium, antimony, tellurium, carbon, and sulfur and is expressed by CpSqGexSbyTez, where p is an atomic concentration of carbon, q is an atomic concentration of sulfur, x is an atomic concentration of germanium, y is an atomic concentration of antimony, and z is an atomic concentration of tellurium, wherein a sum of p, q, x, y, and z equals 1, wherein each of p, q, x, y, and z is greater than zero, and wherein q is greater than 0.01 and is less than or equal to about 0.2.

公开(公告)号：US11581367B2

公开(公告)日：2023-02-14

申请号：US17209660

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Ahn ,  Segab Kwon ,  Chungman Kim ,  Kwangmin Park ,  Zhe Wu ,  Seunggeun Yu ,  Wonjun Lee ,  Jabin Lee ,  Jinwoo Lee

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.