公开(公告)号：US11355497B2

公开(公告)日：2022-06-07

申请号：US17077257

申请日：2020-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonho Son ,  Suklae Kim ,  Sejin Park ,  Seungjoong Shin ,  Hyuewon Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a memory cell storing data. The memory cell capacitor includes a plurality of bottom electrodes on a substrate and extending in a vertical direction with respect to a top surface of the substrate, the plurality of bottom electrodes being spaced apart from each other in a first direction parallel to the top surface of the substrate, an upper support pattern on upper lateral surfaces of the plurality of bottom electrodes, and a lower support pattern on lower lateral surfaces of the plurality of bottom electrodes. The lower support pattern is disposed between the substrate and the upper support pattern, and a first bottom electrode of the plurality of bottom electrodes includes a first recess adjacent to a bottom surface of the lower support pattern.

公开(公告)号：US11317278B2

公开(公告)日：2022-04-26

申请号：US16624064

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Janghee Lee ,  Sejin Park ,  Wonil Lee

IPC: H04W12/037 ,  H04W76/19 ,  H04W12/106 ,  H04W36/08 ,  H04W80/02

Abstract: Disclosed is a fifth generation (5G) or pre-5G communication system for supporting data transmission rate higher than that of a fourth generation (4G) communication system such as long term evolution (LTE). The objective of the present disclosure is to detect a mismatch of an encryption parameter in a wireless communication system, and an operating method of a reception end includes the steps of: receiving, from a transmission end, a packet including information related to a serial number of the packet and an encryption parameter determined on the basis of the serial number; determining whether the encryption parameter determined by the reception end is mismatched, on the basis of the information related to the serial number and the encryption parameter.

公开(公告)号：US11264482B2

公开(公告)日：2022-03-01

申请号：US16572681

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyun Kim ,  Inhyun Song ,  Yeongmin Jeon ,  Sejin Park ,  Juyun Park ,  Jonghoon Baek ,  Taeyeon Shin ,  Sooyeon Jeong

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.

公开(公告)号：US11297528B2

公开(公告)日：2022-04-05

申请号：US16620751

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Park ,  Wonil Lee

IPC: H04W28/02

Abstract: The present disclosure relates to a 5G (5th generation) or pre-5G communication system for supporting a higher data transmission rate than a 4G (4th generation) communication system such as Long Term Evolution (LTE). In accordance with various embodiments of the present disclosure, a device in a Central Unit (CU) connected to a Distributed Unit (DU) and a fronthaul in a wireless communication system may comprise: a communication interface for performing signaling between the CU and the DU; and at least one processor for determining whether to control a congestion state of the DU on the basis of the signaling, and when controlling the congestion state of the DU, stopping transmission of at least one packet to the DU before processing a Packet Data Convergence Protocol (PDCP).

公开(公告)号：US10115722B2

公开(公告)日：2018-10-30

申请号：US15478234

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-chul Oh ,  Sejin Park

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.

公开(公告)号：US20240412984A1

公开(公告)日：2024-12-12

申请号：US18810623

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ansook Sul ,  Sungyong Park ,  Sejin Park ,  Donok Choi

IPC: H01L21/67 ,  B08B3/12 ,  B08B7/00 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

公开(公告)号：US12119240B2

公开(公告)日：2024-10-15

申请号：US18081948

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ansook Sul ,  Sungyong Park ,  Sejin Park ,  Donok Choi

IPC: H01L21/00 ,  B08B3/12 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67034 ,  B08B3/12 ,  B08B7/0021 ,  H01L21/02101 ,  H01L21/68785

Abstract: A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

公开(公告)号：US12058744B2

公开(公告)日：2024-08-06

申请号：US18316751

申请日：2023-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyeob Oak ,  Sejin Park ,  Jisoo Song ,  Wonil Lee

IPC: H04W76/10 ,  H04L67/10 ,  H04W72/04 ,  H04W80/02

CPC classification number: H04W76/10 ,  H04L67/10 ,  H04W72/04 ,  H04W80/02

Abstract: The present disclosure relates to a research that has been conducted with the support of the “Cross-Departmental Giga KOREA Project” funded by the government (the Ministry of Science and ICT) in 2017 (No. GK17N0100, millimeter wave 5G mobile communication system development). The present disclosure relates to a communication technique for convergence of a 5G communication system for supporting a higher data transmission rate beyond a 4G system with an IoT technology, and a system therefor. The present disclosure may be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety-related service, etc.) on the basis of a 5G communication technology and an IoT-related technology.

公开(公告)号：US20230187231A1

公开(公告)日：2023-06-15

申请号：US18081948

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ansook Sul ,  Sungyong Park ,  Sejin Park ,  Donok Choi

IPC: H01L21/67 ,  B08B7/00 ,  B08B3/12 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67034 ,  B08B7/0021 ,  B08B3/12 ,  H01L21/02101 ,  H01L21/68785

Abstract: A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

公开(公告)号：US20250132137A1

公开(公告)日：2025-04-24

申请号：US18816957

申请日：2024-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Seok Kim ,  Mukyeong Kim ,  Sejin Park ,  Iljeong Heo

IPC: H01J37/32 ,  C25B1/04 ,  C25B15/08

Abstract: A scrubber includes a plasma treatment system, a hydrogen supply system, and a wet treatment system. The plasma treatment system performs a plasma treatment in which a process gas and a hydrogen gas are reacted using plasma. The hydrogen supply system supplies the hydrogen gas to the plasma treatment system. The wet treatment system performs a wet treatment in which a by-product generated by the plasma treatment is wet-treated.