公开(公告)号：US20230207294A1

公开(公告)日：2023-06-29

申请号：US17970163

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hadong JIN ,  Siyoung KOH ,  Namkyun KIM ,  Kyungmin LEE ,  Sungyong LIM ,  Sungyeol KIM ,  Seungbo SHIM

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/24564 ,  H01L21/6831

Abstract: Provided is a plasma control apparatus including a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency configured to generate plasma is applied, an edge electrode disposed adjacent to the plasma electrode and corresponding to a plasma edge region, and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit being configured to control an electrical boundary condition in a plasma edge boundary region of a first frequency component, a harmonic wave component generated by nonlinearity of the plasma and intermodulation distortion frequency components generated by a frequency component in the plasma chamber and each of the first frequency component and the harmonic wave component, wherein the plasma control circuit is configured to change the electrical boundary condition to control a standing wave in the plasma chamber.

公开(公告)号：US20240274661A1

公开(公告)日：2024-08-15

申请号：US18507606

申请日：2023-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoung YOON ,  Jonghwa SHIN ,  Minyeul LEE ,  Sungyeol KIM ,  Taekjin KIM ,  Meehyun LIM ,  Sungyong LIM

IPC: H01L29/06

CPC classification number: H01L29/0657 ,  H01L29/0692

Abstract: A dielectric structure may include: an insulating layer extending in a first direction; a plurality of conductor layers disposed on a first surface of the insulating layer and spaced apart from each other in the first direction; at least one semiconductor layer disposed on a second surface of the insulating layer, opposite to the first surface, and overlapping each of at least two conductor layers adjacent to each other among the plurality of conductor layers in a second direction intersecting the first direction; a first protective layer covering the plurality of conductor layers on the first surface of the insulating layer; and a second protective layer covering the at least one semiconductor layer on the second surface of the insulating layer.

公开(公告)号：US20230197423A1

公开(公告)日：2023-06-22

申请号：US17942368

申请日：2022-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong LIM ,  Chansoo KANG ,  Youngdo KIM ,  Namkyun KIM ,  Sungyeol KIM ,  Sangki NAM ,  Seungbo SHIM ,  Kyungmin LEE

IPC: H01J37/32 ,  G01J1/44

CPC classification number: H01J37/32935 ,  G01J1/44 ,  H01J37/32174 ,  G01J2001/446

Abstract: A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

公开(公告)号：US20190122866A1

公开(公告)日：2019-04-25

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira KOSHIISHI ,  Kwangyoub HEO ,  Sunggil KANG ,  Beomjin YOO ,  Sungyong LIM ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US20230326779A1

公开(公告)日：2023-10-12

申请号：US18042577

申请日：2020-09-15

Applicant: MiCo Ceramics Ltd. ,  Samsung Electronics Co. Ltd.

Inventor： Myungsub JUNG ,  Jun Won SEO ,  Sungyeol KIM ,  Sungyong LIM ,  Hadong JIN ,  Jaehyun CHOI

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/68785

Abstract: Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

公开(公告)号：US20230187175A1

公开(公告)日：2023-06-15

申请号：US17859316

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyosin KIM ,  Sungyong LIM ,  Minsung KIM ,  Dongyub KIM ,  Sungyeol KIM ,  Jongbeom MOON ,  Seungbo SHIM

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01J2237/24564

Abstract: Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.