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公开(公告)号:US20210349660A1
公开(公告)日:2021-11-11
申请号:US17030635
申请日:2020-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: TONGSUNG KIM , JANGWOO LEE , SEONKYOO LEE , CHIWEON YOON , JEONGDON IHM
Abstract: A storage device includes NVM package and a controller connected to the NVM package through a channel and controlling operation of the NVM package. The NVM package includes an interface chip, first NVM devices connected to the interface chip through a first internal channel and second NVM devices connected to the interface chip through a second internal channel. The interface chip selects the first internal channel in response to an operation request received from the controller and connects the first internal channel to the channel. The interface chip also determines whether retraining is necessary in relation to the second internal channel and transmits a retraining request to the controller when retraining is necessary.
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公开(公告)号:US20210132816A1
公开(公告)日:2021-05-06
申请号:US17027978
申请日:2020-09-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YOUNGMIN JO , DAESEOK BYEON , TONGSUNG KIM
Abstract: A memory device comprises a smart buffer, and a memory area divided into a first memory area and a second memory area, wherein the smart buffer comprises a priority setting unit configured to receive a sensing data and a corresponding weight from a controller, determine a priority of the sensing data based on the weight, and classify the sensing data as one of first priority sensing data and second priority sensing data, and a channel controller configured to allocate at least one channel selected from among a plurality of channels to a first channel group, allocate at least another channel selected from among the plurality of channels to a second channel group, assign the first channel group to process the first priority sensing data in relation to the first memory area, and assign the second channel group to process the second priority sensing data in relation to the second memory area, wherein a number of data input/output (I/O) pins connected to the first channel group is greater than a number of data I/O pins connected to the second channel group, wherein the memory area includes at least one memory chip, wherein the at least one memory chip includes a first chip having a first metal pad and a cell region and a second chip having a second metal pad and a peripheral circuit region, and the first chip and the second chip are vertically connected to each other by the first metal pad and the second metal pad.
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公开(公告)号:US20220230666A1
公开(公告)日:2022-07-21
申请号:US17404510
申请日:2021-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: TONGSUNG KIM , YOUNGMIN JO , MANJAE YANG , CHIWEON YOON , JUNHA LEE , BYUNGHOON JEONG
Abstract: A storage device includes a plurality of memory chips and a chip. The plurality of memory chips includes a first memory chip configured to generate a first signal based on a first clock signal, and a second memory chip configured to generate a second signal based on a second clock signal. The chip is configured to receive the first and second signals and generate and output a first and second comparison signal based on a duty cycle of the first and second signals. The first memory chip is further configured to generate a first corrected signal by adjusting a duty cycle of the first clock signal based on the first comparison signal, and the second memory chip is further configured to generate a second corrected signal by adjusting a duty cycle of the second clock signal based on the second comparison signal.
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公开(公告)号:US20210133128A1
公开(公告)日:2021-05-06
申请号:US16853807
申请日:2020-04-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YOUNGMIN JO , DAESEOK BYEON , TONGSUNG KIM
IPC: G06F13/16 , G06N3/04 , H01L25/065 , H01L25/18
Abstract: A memory device provides a first memory area and a second memory area. A smart buffer includes; a priority setting unit receiving sensing data and a corresponding weight, determining a priority of the sensing data based on the corresponding weight, and classifying the sensing data as first priority sensing data or second priority sensing data based on the priority, and a channel controller allocating a channel to a first channel group, allocating another channel to a second channel group, assigning the first channel group to process the first priority sensing data in relation to the first memory area, and assigning the second channel group to process the second priority sensing data in relation to the second memory area.
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公开(公告)号:US20240379141A1
公开(公告)日:2024-11-14
申请号:US18781289
申请日:2024-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: TONGSUNG KIM , YOUNGMIN JO , MANJAE YANG , CHIWEON YOON , JUNHA LEE , BYUNGHOON JEONG
Abstract: A storage device includes a plurality of memory chips and a chip. The plurality of memory chips includes a first memory chip configured to generate a first signal based on a first clock signal, and a second memory chip configured to generate a second signal based on a second clock signal. The chip is configured to receive the first and second signals and generate and output a first and second comparison signal based on a duty cycle of the first and second signals. The first memory chip is further configured to generate a first corrected signal by adjusting a duty cycle of the first clock signal based on the first comparison signal, and the second memory chip is further configured to generate a second corrected signal by adjusting a duty cycle of the second clock signal based on the second comparison signal.
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公开(公告)号:US20240223187A1
公开(公告)日:2024-07-04
申请号:US18381611
申请日:2023-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younggyu Lee , TONGSUNG KIM , SEUNGJUN BAE , SEONKYOO LEE , TAESUNG LEE
IPC: H03K19/00 , H03K19/017 , H03K19/17784
CPC classification number: H03K19/0005 , H03K19/01721 , H03K19/17784
Abstract: A semiconductor memory device may include an impedance adjustment pad, a dummy pull-down driver and an external resistor connected in parallel between the impedance adjustment pad and a ground, a recursive code generation circuit configured to recursively generate a pull-up code and a pull-down code corresponding to a target resistance by using the external resistor and the dummy pull-down driver as a reference resistance, in an impedance calibration operation of the semiconductor memory device, a code register configured to store the generated pull-up code and the pull-down code, and a calibration control logic circuit configured to control the recursive code generation circuit during a plurality of steps in the impedance calibration operation while adjusting a resistance value of the dummy pull-down driver.
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公开(公告)号:US20220101895A1
公开(公告)日:2022-03-31
申请号:US17477931
申请日:2021-09-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YOUNGMIN JO , Byunghoon Jeong , TONGSUNG KIM , CHIWEON YOON , SEONKYOO LEE
IPC: G11C7/10
Abstract: A memory device includes a memory cell array, a page buffer, a control logic circuit, a plurality of input/output pins, a data bus inversion (DBI) pin, and an interface circuit. The page buffer is connected to the memory cell array. The control logic circuit is configured to control an operation of the memory cell array. The plurality of input/output pins receive a plurality of data signals from the controller. The DBI pin receives a DBI signal from the controller. The interface circuit count a first number of bits having a logic value of 1 and a second number of bits having a logic value of 0 from the data signals and the DBI signal and provide the data signals to the page buffer or the control logic circuit based on the first number and the second number.
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