公开(公告)号：US20240212729A1

公开(公告)日：2024-06-27

申请号：US18392199

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tongsung KIM ,  Seonkyoo LEE ,  Seungjun BAE ,  Taesung LEE

IPC: G11C7/22 ,  G11C7/10

CPC classification number: G11C7/222 ,  G11C7/1066

Abstract: A storage device includes a first chip and a second chip configured to exchange data with the first chip. The first chip may transmit a data strobe signal and a plurality of data signals, applied with different delay times, to the second chip. The second chip may sample the plurality of data signals, applied with the different delay times, using the data strobe signal received from the first chip during data training.

公开(公告)号：US20220181372A1

公开(公告)日：2022-06-09

申请号：US17507374

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesung LEE ,  Dongmin Keum ,  Bumsuk Kim ,  Jinho Kim ,  Junsung Park ,  Kwanghee Lee ,  Dongkyu Lee ,  Yunki Lee

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

公开(公告)号：US20240258351A1

公开(公告)日：2024-08-01

申请号：US18631933

申请日：2024-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesung LEE ,  Dongmin KEUM ,  Bumsuk KIM ,  Jinho KIM ,  Junsung PARK ,  Kwanghee LEE ,  Dongkyu LEE ,  Yunki LEE

IPC: H01L27/146 ,  H04N23/67

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H04N23/672

Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

公开(公告)号：US20160125948A1

公开(公告)日：2016-05-05

申请号：US14993464

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taesung LEE ,  Jaewoo IM

IPC: G11C16/26 ,  G11C16/08

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/28 ,  G11C2213/71

Abstract: An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.

Abstract translation: 非易失性存储器件的输出电路包括读出放大电路，其被配置为在感测操作期间，在感测操作期间，基于数据线上的第一电压与参考数据线上的参考电压之间的比较来产生输出数据， 所述第一电压对应于从至少一个存储单元读取的数据，并且所述感测放大电路还被配置为在所述感测操作期间将所述参考数据线与接地端连接。