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    MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SINTERED BODY
    3.
    发明公开
    MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SINTERED BODY 审中-公开

    公开(公告)号：US20240253118A1

    公开(公告)日：2024-08-01

    申请号：US18416041

    申请日：2024-01-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changhwan Kim ,  Takafumi Noguchi ,  Toshihiro Iizuka ,  Kenichi Nagayama

    IPC: B22F3/14 ,  G01N29/14

    CPC classification number: B22F3/14 ,  G01N29/14 ,  B22F2302/45 ,  B22F2999/00 ,  G01N2291/0231

    Abstract: In a manufacturing method for a sintered body, a mold device including a die, first and second punches, first and second spacers, first and second rams, and a plurality of thermal resistors is used. The manufacturing method includes an operation of loading raw material powder into a cavity of the die and then sintering the raw material powder, while pressing and molding the raw material powder in the uniaxial direction using the first and second punches, to form a sintered body and an operation of cooling the formed sintered body. In the operation of cooling the formed sintered body, an acoustic emission (AE) waveform is detected from the formed sintered body, and it is determined whether a crack has occurred in the formed sintered body using the detected AE waveform.

    VAPOR SUPPLY APPARATUS
    4.
    发明公开
    VAPOR SUPPLY APPARATUS 审中-公开

    公开(公告)号：US20240254623A1

    公开(公告)日：2024-08-01

    申请号：US18421553

    申请日：2024-01-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changhwan Kim ,  Takafumi Noguchi ,  Toshihiro Iizuka ,  Kenichi Nagayama

    IPC: C23C16/448 ,  C23C16/455

    CPC classification number: C23C16/448 ,  C23C16/45557 ,  C23C16/45561

    Abstract: A vapor supply apparatus is described. The apparatus stably supplies vapor to a process chamber when the vapor pressure of the material is lower than the process pressure. The apparatus includes a supply container accommodating a solid or a liquid having a vapor pressure which is lower than the process pressure. The vapor may be generated in the supply container from a liquid or from a solid. A buffer tank is interposed between the supply container and the process chamber and into which the vapor from the container is introduced by reducing pressure. The apparatus includes a mechanism for pressurizing the buffer tank and pressure-feeding the vapor to the process chamber.

    Wafer stage and method of manufacturing the same
    6.
    发明授权
    Wafer stage and method of manufacturing the same 有权

    公开(公告)号：US11309203B2

    公开(公告)日：2022-04-19

    申请号：US16458264

    申请日：2019-07-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kazuyuki Tomizawa ,  Masashi Kikuchi ,  Michio Ishikawa ,  Takafumi Noguchi ,  Kazuhiro Yamamuro

    IPC: H01T23/00 ,  H01L21/683 ,  F25B21/02 ,  H01L21/67 ,  H01L35/30

    Abstract: A wafer stage includes an electrostatic chuck (ESC) plate, an upper supporting plate, a lower supporting plate and a temperature controller. The ESC plate includes a first surface that supports a wafer. The upper supporting plate is bonded to a second surface of the ESC plate opposite to the first surface. The lower supporting plate overlaps the upper supporting plate. The temperature controller is disposed between the upper supporting plate and the lower supporting plate. The ESC plate includes ceramics. The upper supporting plate includes a composite material of aluminum or aluminum alloy and ceramics or carbon. The ESC plate and the upper supporting plate are directly bonded to each other by a room temperature solid bonding process. Thus, the wafer stage has sufficient strength to withstand pressure differences between a vacuum and atmospheric pressure, improved temperature response by minimizing heat capacity, and prevents warpage of the ESC plate.

    Plasma processing apparatus
    8.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US11244839B2

    公开(公告)日：2022-02-08

    申请号：US16385919

    申请日：2019-04-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheonkyu Lee ,  Siqing Lu ,  Takafumi Noguchi

    IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32

    Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

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