公开(公告)号：US12272630B2

公开(公告)日：2025-04-08

申请号：US18347519

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11984415B2

公开(公告)日：2024-05-14

申请号：US17528954

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Wonil Lee

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/544 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48

CPC classification number: H01L24/02 ,  H01L21/486 ,  H01L23/49838 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L25/18 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/04 ,  H01L2223/54426 ,  H01L2224/0213 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/03019 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05019 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/0603 ,  H01L2224/06182

Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

公开(公告)号：US11728255B2

公开(公告)日：2023-08-15

申请号：US17154067

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49816 ,  H01L23/49838 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11482483B2

公开(公告)日：2022-10-25

申请号：US17038306

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US12218043B2

公开(公告)日：2025-02-04

申请号：US17971321

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L25/18 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US11848307B2

公开(公告)日：2023-12-19

申请号：US17478247

申请日：2021-09-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo Park ,  Ungcheon Kim ,  Heonwoo Kim ,  Yunseok Choi

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/498 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L25/0655 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/562

Abstract: A semiconductor package includes a base substrate and an interposer substrate. The interposer substrate includes a semiconductor substrate, a first passivation layer, a wiring region, a through via penetrating through the semiconductor substrate and the first passivation layer, and a second passivation layer covering at least a portion of the first passivation layer and having an opening exposing a lower surface of the through via. The semiconductor package further includes a conductive pillar extending from the opening of the second passivation layer; and a conductive bump disposed between the conductive pillar and the base substrate. The opening of the second passivation layer has inclined side surfaces such that a width of the opening decreases towards the first passivation layer, and side surfaces of the conductive pillar are positioned to overlap the inclined side surfaces of the second passivation layer in a vertical direction.

公开(公告)号：US20250132238A1

公开(公告)日：2025-04-24

申请号：US18991938

申请日：2024-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L23/544 ,  H01L25/18

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US20240274553A1

公开(公告)日：2024-08-15

申请号：US18643474

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Wonil Lee

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/48 ,  H01L23/498 ,  H01L23/544 ,  H01L25/10 ,  H01L25/18

CPC classification number: H01L24/02 ,  H01L21/486 ,  H01L23/49838 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L25/18 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/04 ,  H01L2223/54426 ,  H01L2224/0213 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/03019 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05019 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/0603 ,  H01L2224/06182

Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

公开(公告)号：US20230352386A1

公开(公告)日：2023-11-02

申请号：US18347519

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L23/49838 ,  H01L21/4857 ,  H01L23/49816 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US20230052195A1

公开(公告)日：2023-02-16

申请号：US17971321

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L25/18 ,  H01L21/48 ,  H01L23/538

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.