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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10243040B1

    公开(公告)日：2019-03-26

    申请号：US15964170

    申请日：2018-04-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Seok Park ,  Seung Min Song ,  Jung Gil Yang ,  Geum Jong Bae ,  Dong Il Bae

    IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417

    Abstract: A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel layers spaced apart from each other in a direction perpendicular to an upper surface of the substrate while connecting the source/drain regions, respectively, a gate electrode surrounding each of the plurality of channel layers, and a gate insulator between the gate electrode and the plurality of channel layers; and a non-active component disposed on a second region of the substrate, the non-active component including a fin structure including an a plurality of first semiconductor patterns alternately stacked with a plurality of second semiconductor patterns, an epitaxial region adjacent to the fin structure, a non-active electrode intersecting the fin structure, and a blocking insulation film between the non-active electrode and the fin structure.

    SEMICONDUCTOR DEVICES
    3.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230387237A1

    公开(公告)日：2023-11-30

    申请号：US18449734

    申请日：2023-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MYUNG GIL KANG ,  Dong Won Kim ,  Woo Seok Park ,  Keun Hwi Cho ,  Sung Gi Hur

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

    CPC classification number: H01L29/42392 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/78696 ,  H01L29/4236

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    Semiconductor device and method for fabricating the same
    4.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US10181510B2

    公开(公告)日：2019-01-15

    申请号：US15726535

    申请日：2017-10-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung Gil Yang ,  Seung Min Song ,  Sung Min Kim ,  Woo Seok Park ,  Geum Jong Bae ,  Dong Il Bae

    IPC: H01L29/76 ,  H01L29/06 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

    Abstract: A method of manufacturing a semiconductor device is provided. A stacked structure including one or more sacrificial layers and one or more semiconductor layers are stacked on a substrate is formed. A dummy gate structure including a dummy gate and a dummy spacer on the stacked structure is formed. The stacked structure is etched using the dummy gate structure to form a first recess. The one or more sacrificial layers are etched. The dummy spacer is removed. A spacer film is formed on the dummy gate, the one or more semiconductor layer and the one or more sacrificial layers. The semiconductor layer and spacer film are etched to form a second recess using the dummy gate and spacer film. An external spacer formed on the dummy gate and an internal spacer formed on the one or more sacrificial layers are formed. A source/drain region is formed in the second recess.

    Semiconductor devices
    5.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US12183800B2

    公开(公告)日：2024-12-31

    申请号：US18449734

    申请日：2023-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myung Gil Kang ,  Dong Won Kim ,  Woo Seok Park ,  Keun Hwi Cho ,  Sung Gi Hur

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    SEMICONDUCTOR DEVICES
    6.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20240421212A1

    公开(公告)日：2024-12-19

    申请号：US18642987

    申请日：2024-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo Seok Park ,  Jae Ho Jeon ,  Sung Gi Hur

    IPC: H01L29/66 ,  H01L29/06

    Abstract: There is provided a semiconductor device capable of improving element performance and reliability. The semiconductor device may include an active pattern that includes a lower pattern extending in a first direction on a substrate and a sheet pattern on the lower pattern, a field insulating layer that defines the active pattern on the substrate, a gate structure on the lower pattern and including a gate insulating layer and a gate electrode, the gate electrode extending in a second direction perpendicular to the first direction, a gate spacer at least partially surrounding the gate structure and including a first portion on a sidewall of the gate structure and a second portion on a bottom surface of the gate structure, and a source/drain pattern on the lower pattern and in contact with the sheet pattern.

    Semiconductor devices
    8.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11769813B2

    公开(公告)日：2023-09-26

    申请号：US18046518

    申请日：2022-10-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myung Gil Kang ,  Dong Won Kim ,  Woo Seok Park ,  Keun Hwi Cho ,  Sung Gi Hur

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

    CPC classification number: H01L29/42392 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/4236 ,  H01L29/78696

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    Semiconductor devices
    9.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11482606B2

    公开(公告)日：2022-10-25

    申请号：US17209290

    申请日：2021-03-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myung Gil Kang ,  Dong Won Kim ,  Woo Seok Park ,  Keun Hwi Cho ,  Sung Gi Hur

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/786 ,  H01L29/06

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

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