Method of manufacturing a semiconductor device using the same

    公开(公告)号:US10776549B2

    公开(公告)日:2020-09-15

    申请号:US16266143

    申请日:2019-02-04

    Abstract: A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.

    Semiconductor device
    3.
    发明授权

    公开(公告)号:US11171224B2

    公开(公告)日:2021-11-09

    申请号:US16889899

    申请日:2020-06-02

    Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    10.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
    制造半导体器件的方法

    公开(公告)号:US20160020301A1

    公开(公告)日:2016-01-21

    申请号:US14707144

    申请日:2015-05-08

    Abstract: Provided is a method of manufacturing a semiconductor device including: forming a gate electrode structure on an active region of a semiconductor substrate; forming recesses in regions positioned on both sides of the gate electrode structure on the active region; performing a pre-treatment on the recesses using an inert gas plasma; growing epitaxial layers for a source and a drain on the pre-treated recesses; and forming a source electrode structure and a drain electrode structure in the epitaxial layers for the source and the drain, respectively. Also provided is a method in which, after an etching process for forming recesses and/or after an etching process for forming a contact hole, an etched surface may be treated with an inert gas plasma before growing an epitaxial layer. Thus, one or two types of plasma treatment may be employed in the method.

    Abstract translation: 提供一种制造半导体器件的方法,包括:在半导体衬底的有源区上形成栅电极结构; 在所述有源区上形成位于所述栅电极结构两侧的区域中的凹槽; 使用惰性气体等离子体对凹部进行预处理; 在预处理的凹槽上生长用于源极和漏极的外延层; 以及在源极和漏极的外延层中分别形成源极结构和漏极结构。 还提供了一种方法,其中在用于形成凹陷的蚀刻工艺和/或用于形成接触孔的蚀刻工艺之后,可以在生长外延层之前用惰性气体等离子体处理蚀刻表面。 因此,在该方法中可以采用一种或两种类型的等离子体处理。

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