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    Memory card, memory system including the same, and operating method thereof
    2.
    发明授权
    Memory card, memory system including the same, and operating method thereof 有权
    存储卡，包括其的存储器系统及其操作方法

    公开(公告)号：US08370611B2

    公开(公告)日：2013-02-05

    申请号：US12046888

    申请日：2008-03-12

    Applicant: Sung-Up Choi ,  Se-Jin Ahn ,  Yong-Hyeon Kim

    Inventor： Sung-Up Choi ,  Se-Jin Ahn ,  Yong-Hyeon Kim

    IPC: G06F15/177 ,  G06F12/00 ,  G06F9/00 ,  G06F12/02

    CPC classification number: G11C7/1045 ,  G06F9/4401 ,  G06F12/06 ,  G06F2212/2022

    Abstract: Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.

    Abstract translation: 提供了一种存储卡装置。 存储卡装置包括闪存和控制器。 闪速存储器包括存储引导数据的引导区域和存储用户数据的用户区域。 控制器根据外部命令访问引导区域或用户区域。 引导数据可以存储在集成在电子设备中的存储卡中。 此外，当主机请求访问存储在存储卡中的引导数据/用户数据时，可以在控制器的控制下访问引导数据/用户数据。

    MEMORY SYSTEM SELECTING WRITE MODE OF DATA BLOCK AND DATA WRITE METHOD THEREOF
    4.
    发明申请
    MEMORY SYSTEM SELECTING WRITE MODE OF DATA BLOCK AND DATA WRITE METHOD THEREOF 有权
    存储器系统选择数据块的写入模式和数据写入方法

    公开(公告)号：US20120005415A1

    公开(公告)日：2012-01-05

    申请号：US13172897

    申请日：2011-06-30

    Applicant: Sung-Won Jung ,  Se-Jin Ahn ,  Tae-Min Lee

    Inventor： Sung-Won Jung ,  Se-Jin Ahn ,  Tae-Min Lee

    IPC: G06F12/00

    CPC classification number: G06F12/0246

    Abstract: A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.

    Abstract translation: 在非易失性存储装置中执行写入操作的方法包括：将写入数据存储在用于更新数据块的日志块中，确定存储在日志块中的写入模式是顺序写入模式还是随机写入模式，以及选择 用于存储数据块和日志块中的合并数据的新数据块。 根据确定的写入模式，将新数据块确定为单级单元块或多级单元块。

    FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF
    5.
    发明申请
    FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF 审中-公开
    闪存存储器件及其程序方法

    公开(公告)号：US20080025095A1

    公开(公告)日：2008-01-31

    申请号：US11776109

    申请日：2007-07-11

    Applicant: Se-Jin Ahn ,  Tae-Keun Jeon

    Inventor： Se-Jin Ahn ,  Tae-Keun Jeon

    IPC: G11C16/04 ,  G11C16/06

    CPC classification number: G11C16/10

    Abstract: A flash memory device and method of programming a flash memory device which include an array of memory cells arranged in rows and columns. A method includes programming memory cells of a selected row with loaded data; determining whether the memory cells of the selected row are successfully programmed; when the judgment result is determined as a unsuccessful program operation, determining a reprogram operation according to flag information indicating an on/off state of the reprogram operation stored in the flash memory device; and when the flag information indicates an on state of the reprogram information, reprogramming the loaded data to memory cells of a different row from the selected row.

    Abstract translation: 一种闪速存储器件和一种编程闪存器件的方法，其包括以行和列布置的存储器单元阵列。 一种方法包括用加载的数据来编程所选行的存储单元; 确定所选行的存储单元是否被成功地编程; 当判断结果被确定为不成功的程序操作时，根据表示存储在闪速存储器件中的重新编程操作的开/关状态的标志信息来确定重新编程操作; 并且当标志信息指示重新编程信息的接通状态时，将加载的数据重新编程到与所选择的行不同行的存储单元。

    Semiconductor memory devices having offset transistors and methods of fabricating the same
    6.
    发明申请
    Semiconductor memory devices having offset transistors and methods of fabricating the same 失效
    具有偏移晶体管的半导体存储器件及其制造方法

    公开(公告)号：US20050029559A9

    公开(公告)日：2005-02-10

    申请号：US10696615

    申请日：2003-10-28

    Applicant: Se-Jin Ahn ,  Se-Ho Lee

    Inventor： Se-Jin Ahn ,  Se-Ho Lee

    IPC: H01L29/72 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/80 ,  H01L31/112

    CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42324

    Abstract: Semiconductor memory devices are provided that comprise unit memory cells. The unit memory cells include a first planar transistor in a semiconductor substrate, a vertical transistor disposed on the first planar transistor and a second planar transistor in series with the first planar transistor. The first planar transistor and the second planar transistor may have different threshold voltages. The semiconductor memory device may further include word lines. One of these word lines may form the gate of the second planar transistor a unit memory cell.

    Abstract translation: 提供了包括单元存储单元的半导体存储器件。 单元存储单元包括半导体衬底中的第一平面晶体管，设置在第一平面晶体管上的垂直晶体管和与第一平面晶体管串联的第二平面晶体管。 第一平面晶体管和第二平面晶体管可以具有不同的阈值电压。 半导体存储器件还可以包括字线。 这些字线之一可以形成第二平面晶体管的单元存储单元的栅极。

    Memory system selecting write mode of data block and data write method thereof
    8.
    发明授权
    Memory system selecting write mode of data block and data write method thereof 有权
    存储器系统选择数据块的写入模式及其数据写入方法

    公开(公告)号：US08677058B2

    公开(公告)日：2014-03-18

    申请号：US13172897

    申请日：2011-06-30

    Applicant: Sung-Won Jung ,  Se-Jin Ahn ,  Tae-Min Lee

    Inventor： Sung-Won Jung ,  Se-Jin Ahn ,  Tae-Min Lee

    IPC: G06F12/00

    CPC classification number: G06F12/0246

    Abstract: A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.

    Abstract translation: 在非易失性存储装置中执行写入操作的方法包括：将写入数据存储在用于更新数据块的日志块中，确定存储在日志块中的写入模式是顺序写入模式还是随机写入模式，以及选择 用于存储数据块和日志块中的合并数据的新数据块。 根据确定的写入模式，将新数据块确定为单级单元块或多级单元块。

    Display device for controlling light intensity
    10.
    发明授权
    Display device for controlling light intensity 失效
    用于控制光强度的显示装置

    公开(公告)号：US5773930A

    公开(公告)日：1998-06-30

    申请号：US626928

    申请日：1996-04-03

    Applicant: Se-Jin Ahn

    Inventor： Se-Jin Ahn

    IPC: G02F1/133 ,  G02F1/055 ,  G02F1/1335 ,  G09F9/00 ,  G09F9/30 ,  H01J1/70

    CPC classification number: G02F1/055

    Abstract: A display device for controlling light intensity is provided. The display device has a pair of glass substrates disposed in parallel so as to face each other, and first and second transparent electrodes each arranged as stripes on the inner surfaces of the glass substrates, respectively, and extend orthogonally to each other and to which voltages are applied. A dielectric layer is disposed between the first transparent electrode and the second transparent electrode. The intensity of light transmitting the display device is controlled by controlling the density of electrons charged in part of at least one of the first and second transparent electrodes according to the applied voltage and thus reflecting light incident on the electrodes in which the electrons are charged.

    Abstract translation: 提供了一种用于控制光强度的显示装置。 显示装置具有一对彼此相对平行地设置的玻璃基板，分别在玻璃基板的内表面上分别设置成条状的第一和第二透明电极，并且彼此正交地延伸，并且电压 被应用。 电介质层设置在第一透明电极和第二透明电极之间。 通过根据施加的电压控制在第一和第二透明电极中的至少一个电荷的一部分中充入的电子的密度，从而反射入射到电子被充电的电极上的光，来控制透射显示装置的光的强度。

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