公开(公告)号：US20140022837A1

公开(公告)日：2014-01-23

申请号：US13947810

申请日：2013-07-22

Applicant: Seagate Technology LLC

Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

Abstract: Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a “0” or “1” bit can be managed, such as by an addition of DC biasing to the AC current.

Abstract translation: 公开了用于产生利用磁性隧道结的随机数的装置和方法。 AC电流源可以与磁性隧道结电连接，以向磁性隧道结提供AC电流。 读取电路可以用于基于磁性隧道结的状态来确定位。 可以通过调整AC电流的频率或振幅来调整位的产生速率。 可以例如通过向AC电流添加DC偏置来管理获得“0”或“1”位的概率。

公开(公告)号：US09087593B2

公开(公告)日：2015-07-21

申请号：US13947810

申请日：2013-07-22

Applicant: Seagate Technology LLC

Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC: G06F7/58 ,  G11C11/16 ,  G01R33/09

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

Abstract: Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a “0” or “1” bit can be managed, such as by an addition of DC biasing to the AC current.

Abstract translation: 公开了用于产生利用磁性隧道结的随机数的装置和方法。 AC电流源可以与磁性隧道结电连接，以向磁性隧道结提供AC电流。 读取电路可以用于基于磁性隧道结的状态来确定位。 可以通过调整AC电流的频率或振幅来调整位的产生速率。 可以例如通过向AC电流添加DC偏置来管理获得“0”或“1”位的概率。

公开(公告)号：US08675401B2

公开(公告)日：2014-03-18

申请号：US13847135

申请日：2013-03-19

Applicant: Seagate Technology LLC

Inventor： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

IPC: G11C11/00

CPC classification number: G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

Abstract translation: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

公开(公告)号：US20130215674A1

公开(公告)日：2013-08-22

申请号：US13847135

申请日：2013-03-19

Applicant: Seagate Technology LLC

Inventor： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

Abstract translation: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

公开(公告)号：US10684778B2

公开(公告)日：2020-06-16

申请号：US14846411

申请日：2015-09-04

Applicant: Seagate Technology LLC

Inventor： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

IPC: G06F3/06 ,  G06F12/02

Abstract: Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

公开(公告)号：US20150378607A1

公开(公告)日：2015-12-31

申请号：US14846411

申请日：2015-09-04

Applicant: Seagate Technology LLC

Inventor： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0655 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/225 ,  G06F2212/7202 ,  Y02D10/13

Abstract: Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

Abstract translation: 本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。 根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。 将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

公开(公告)号：US20130188420A1

公开(公告)日：2013-07-25

申请号：US13788695

申请日：2013-03-07

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/1693

Abstract: A non-destructive self-reference spin-transfer torque memory unit is disclosed.

Abstract translation: 公开了一种非破坏性的自参考自旋转移转矩存储单元。