公开(公告)号：US20250160189A1

公开(公告)日：2025-05-15

申请号：US19022175

申请日：2025-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo Hatsumi ,  Taisuke Kamada ,  Yuji Iwaki ,  Junpei Momo ,  Shunpei Yamazaki

IPC: H10K65/00 ,  A61B5/00 ,  A61B5/1172 ,  A61B5/145 ,  A61B5/1455 ,  G06F3/044 ,  G06V40/12 ,  G06V40/13 ,  G09F9/33 ,  H01L25/18 ,  H10K30/80 ,  H10K59/40

Abstract: A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and alight-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has functions of receiving the first light and converting the first light into an electric signal and functions of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.

公开(公告)号：US20250120125A1

公开(公告)日：2025-04-10

申请号：US18913272

申请日：2024-10-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H10K10/46

Abstract: The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

公开(公告)号：US12250855B2

公开(公告)日：2025-03-11

申请号：US17488376

申请日：2021-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131 ,  H10K50/82

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

公开(公告)号：US12243881B2

公开(公告)日：2025-03-04

申请号：US18239928

申请日：2023-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G11C19/18 ,  G11C19/28 ,  H01L29/786 ,  H03K17/16 ,  H03K19/003 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US12243482B2

公开(公告)日：2025-03-04

申请号：US18036221

申请日：2021-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Tatsuya Onuki

IPC: G09G3/3233

Abstract: A display device excellent in downsizing, reduction in power consumption, or layout flexibility of an arithmetic device is provided. The display device includes a pixel circuit, a driver circuit, and a functional circuit. The driver circuit has a function of outputting an image signal for performing display in the pixel circuit. The functional circuit includes a CPU including a CPU core including a flip-flop electrically connected to a backup circuit. The display device includes a first layer and a second layer. The first layer includes the driver circuit and the CPU. The second layer includes the pixel circuit and the backup circuit. The first layer includes a semiconductor layer including silicon in a channel formation region. The second layer includes a semiconductor layer including a metal oxide in a channel formation region. The CPU has a function of correcting the image signal in accordance with the amount of current flowing through the pixel circuit.

公开(公告)号：US12239005B2

公开(公告)日：2025-02-25

申请号：US18417153

申请日：2024-01-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Taisuke Kamada ,  Yuji Iwaki ,  Junpei Momo ,  Shunpei Yamazaki

IPC: H10K65/00 ,  A61B5/00 ,  A61B5/1172 ,  A61B5/145 ,  A61B5/1455 ,  G06F3/044 ,  G06V40/12 ,  G06V40/13 ,  G09F9/33 ,  H01L25/18 ,  H10K30/80 ,  H10K59/40

Abstract: A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has functions of receiving the first light and converting the first light into an electric signal and functions of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.

公开(公告)号：US12237424B2

公开(公告)日：2025-02-25

申请号：US18524033

申请日：2023-11-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa

IPC: H01L29/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786

Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

公开(公告)号：US12237019B2

公开(公告)日：2025-02-25

申请号：US17772740

申请日：2020-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takayuki Ikeda ,  Hitoshi Kunitake

IPC: G11C16/26 ,  G06N3/063

Abstract: A low-power memory device in which a NAND flash memory and a controller are connected to each other with a short wiring, the controller and a cache memory are connected to each other with a short wiring, and signal transmission delay is small is provided. For example, the NAND flash memory is formed using a Si transistor formed with a single crystal silicon substrate. Since an OS transistor can be formed by a method such as a thin-film method, the cache memory formed using the OS memory can be stacked over the NAND flash memory. When the NAND flash memory and the cache memory are formed in one chip, the NAND flash memory and the controller can be connected to each other with a short wiring, and the controller and the cache memory can be connected to each other with a short wiring.

公开(公告)号：US12230719B2

公开(公告)日：2025-02-18

申请号：US17902010

申请日：2022-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.

公开(公告)号：US12230715B2

公开(公告)日：2025-02-18

申请号：US18600901

申请日：2024-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/66 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/15 ,  H10K59/121 ,  H10K59/124

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.