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    NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION
    1.
    发明申请
    NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION 有权
    由原子层沉积辅助的等离子体等离子体离子注入的新方法

    公开(公告)号：US20110159673A1

    公开(公告)日：2011-06-30

    申请号：US13038199

    申请日：2011-03-01

    申请人： Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

    发明人： Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

    IPC分类号： H01L21/22

    CPC分类号： H01L21/2236 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/56

    摘要： Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.

    摘要翻译： 本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。 将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。 然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

    Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
    2.
    发明授权
    Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor 有权
    用于环形源反应器的等离子体浸没离子注入与高度均匀的室调节过程

    公开(公告)号：US07691755B2

    公开(公告)日：2010-04-06

    申请号：US11748783

    申请日：2007-05-15

    申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    IPC分类号： H01L21/00 ,  H01L21/26

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

    摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

    摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生通过该室的六十种物质的环形等离子体电流，以在室内的表面上沉积SixOy材料的调味层，同时离开基座而没有晶片，以便 露出基座的晶片支撑表面。

    Method for conformal plasma immersed ion implantation assisted by atomic layer deposition
    4.
    发明授权
    Method for conformal plasma immersed ion implantation assisted by atomic layer deposition 有权
    通过原子层沉积辅助等离子体沉积离子注入的方法

    公开(公告)号：US08709924B2

    公开(公告)日：2014-04-29

    申请号：US13038199

    申请日：2011-03-01

    申请人： Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

    发明人： Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

    IPC分类号： H01L21/205 ,  H01L21/22

    CPC分类号： H01L21/2236 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/56

    摘要： Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.

    摘要翻译： 本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。 将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。 然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

    NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION
    6.
    发明申请
    NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION 审中-公开
    由原子层沉积辅助的等离子体等离子体离子注入的新方法

    公开(公告)号：US20090203197A1

    公开(公告)日：2009-08-13

    申请号：US12028423

    申请日：2008-02-08

    申请人： HIROJI HANAWA ,  Seon-Mee Cho ,  Majeed A. Foad

    发明人： HIROJI HANAWA ,  Seon-Mee Cho ,  Majeed A. Foad

    IPC分类号： C23C14/12 ,  H01L21/42

    CPC分类号： H01L21/2236 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/56

    摘要： Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.

    摘要翻译： 本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。 将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。 然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

    PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR
    7.
    发明申请
    PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR 有权
    等离子体沉淀离子植入与高分辨率的室温反应器的季铵盐过程

    公开(公告)号：US20080286982A1

    公开(公告)日：2008-11-20

    申请号：US11748783

    申请日：2007-05-15

    申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    IPC分类号： H01L21/31

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

    摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

    摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生穿过室的Si O 2 O 3种类的环形等离子体电流，以沉积Si的调味层 同时在没有晶片的情况下离开基座，以便露出基座的晶片支撑表面，同时在腔室内的表面上形成一个或多个x O 材料。