摘要:
A voltage amplifying circuit (100) that may have a selectable gain has been disclosed. Voltage amplifying circuit (100) may include a voltage amplifier (2) and a gain changing unit (7). A gain changing unit (2) may be capable of changing at least one of: a capacitance between a signal input terminal (6) and an input terminal of a voltage amplifier, the capacitance between an input terminal of a voltage amplifier and a ground (or reference potential), and a capacitance between an input and an output terminal (3) of a voltage amplifier. In this way, a gain from a signal input terminal (6) to an output terminal (3) of a voltage amplifier of a voltage amplifying circuit (100) may be changed.
摘要:
A signal processing device comprises a charge transfer device and a driving circuit, which includes a reference signal generating circuit for generating a reference signal, a transfer clock generating circuit receiving the reference signal for generating a transfer clock to a charge transfer section of the charge transfer device, a digital counter of N bits receiving and counting the reference signal, a D/A converter receiving the output of said counter for converting it into an analog voltage signal, which is applied to a final transfer gate of the charge transfer device, and a latch for latching an output of the counter when an output of a electric charge detection circuit of the charge transfer device reaches a predetermined level, whereby the latch outputs a digital signal of N bits corresponding to a signal electric charge outputted from the charge transfer section.
摘要:
A signal processing circuit for a solid state image sensor, includes a charge detection circuit for outputting a signal output from the image sensor, a first inverting amplifier receiving the signal output, and a second inverting amplifier having a source-grounded MOS transistor having a gate connected to receive an output of the first inverting amplifier. A threshold of the MOS transistor is set to be the same as a black reference voltage in the input signal applied to the MOS transistor. Thus, a reset noise included in the signal output from the image sensor is suppressed or removed.
摘要:
A charge transfer device is disclosed wherein three pixel rows are arranged adjacently to each other. First to third pixel rows are arranged adjacently to each other, and the charge transfer device includes a first charge transfer element for reading out and transferring signal charges generated in the first pixel row and a second charge transfer element for reading out and transferring signal charges generated in the second and third pixel rows. Second readout electrodes for reading out signal charges generated in the second pixel row into the second charge transfer element are provided with one electrode placed between adjacent pixels of the third pixel row.
摘要:
A charge transfer device is provided which is capable of reducing a reset field-through noise in a stable manner without being affected by characteristics of transistors and without occurrence of a mustache-shaped pulse-like noise. The charge transfer device is made up of a floating diffusion region used to convert a signal charge transferred from a CCD (Charge Coupled Device) into a voltage, resetting unit used to eject the signal charge accumulated in the floating diffusion region in response to a reset pulse, a first stage source follower used to current-amplify the voltage and second stage source follower in which load is changed in response to the reset pulse and which is used to current-amplify an output voltage of the first stage source follower.
摘要:
In a charge transfer device incorporating a charge-coupled device, a junction type field-effect transistor, and a reset transistor, the junction type field-effect transistor includes a source region in contact with a junction gate region and a drain region in contact with the junction gate region. The charge-coupled device has an output gate electrode on a first insulation film formed on a surface of a transfer channel region which is formed in contact with the junction gate region. The reset transistor has a reset gate electrode adjacent to the junction gate region with a second insulation film interposed between the junction gate region and the reset gate electrode. A first distance between the source region and each of the output gate electrode and the reset gate electrode is longer than a second distance between the source region and the drain region.
摘要:
A focus detecting device includes a focus detecting optical system which forms a plurality of object images. A photoelectric conversion element array includes a plurality of pixels and subjects each of the plural object images formed by the focus detecting optical system to photoelectric conversion. An electric charge transfer path transfers an electric charge obtained by the photoelectric conversion subjected by the photoelectric conversion element array. A focus detecting section performs focus detection with respect to a plurality of focus areas on the basis of a signal associated with an electric charge transferred by the electric charge transfer path. A plurality of effective pixel regions corresponding to the plural focus areas are arranged in the arrangement direction of the pixels of the photoelectric conversion element array, and ineffective pixel regions are arranged between the plural effective pixel regions.
摘要:
The signal charge corresponding to the amount of light is obtained from a photodiode section and is then stored in a charge storage section under the control of a first control gate. An additional charge storage section may be provided between the photodiode section and the charge storage section. The signal charge thus stored in the charge storage section is supplied to a charge transfer section under the control of a second control gate. The charge storage section is set to operate in a PIN-ing state during its operation, which may be carried out by, for example, covering an N-type region with a storage control electrode to which a predetermined DC bias voltage is applied, or by forming a P-type region in surface portion of the N-type region.
摘要:
A focus detecting device includes a focus detecting optical system which forms a plurality of object images. A photoelectric conversion element array includes a plurality of pixels and subjects each of the plural object images formed by the focus detecting optical system to photoelectric conversion. An electric charge transfer path transfers an electric charge obtained by the photoelectric conversion subjected by the photoelectric conversion element array. A focus detecting section performs focus detection with respect to a plurality of focus areas on the basis of a signal associated with an electric charge transferred by the electric charge transfer path. A plurality of effective pixel regions corresponding to the plural focus areas are arranged in the arrangement direction of the pixels of the photoelectric conversion element array, and ineffective pixel regions are arranged between the plural effective pixel regions.
摘要:
In an autofocus image sensor, monitoring pixels are disposed adjacent to a pixel array over a length equal to that of the pixel array in each of a standard portion and a reference portion. Signals from the monitoring pixels of both of the standard portion and the reference portion are subjected to arithmetic operation to control accumulation of electric charges. Thus, an error in position detection is minimized.