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1.发明申请公开(公告)号：US20110227194A1
公开(公告)日：2011-09-22
申请号：US13052262
申请日：2011-03-21
Applicant: Simon Jeannot , Pascal Tannhof
Inventor： Simon Jeannot , Pascal Tannhof
CPC classification number: H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
Abstract: A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.
Abstract translation: 一种用于在包括一系列金属水平和通孔级别的互连堆叠的金属层中形成电容结构的方法，包括以下步骤：在金属层面形成至少一个其中限定沟槽的导电轨道; 在结构上保形地形成绝缘层; 在沟槽中形成导电材料; 并平坦化结构。
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2.发明授权Method for forming a three-dimensional structure of metal-insulator-metal type 有权用于形成金属 - 绝缘体 - 金属型三维结构的方法公开(公告)号：US08609530B2
公开(公告)日：2013-12-17
申请号：US13052262
申请日：2011-03-21
Applicant: Simon Jeannot , Pascal Tannhof
Inventor： Simon Jeannot , Pascal Tannhof
IPC: H01L21/4763
CPC classification number: H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
Abstract: A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.
Abstract translation: 一种用于在包括一系列金属水平和通孔级别的互连堆叠的金属层中形成电容结构的方法，包括以下步骤：在金属层面形成至少一个其中限定沟槽的导电轨道; 在结构上保形地形成绝缘层; 在沟槽中形成导电材料; 并平坦化结构。
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Patent Agency Ranking
3.发明申请PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INSULATOR-METAL CAPACITOR AND CORRESPONDING INTEGRATED CIRCUIT 审中-公开用于制造包括金属绝缘体 - 金属电容器和相应的集成电路的集成电路的方法公开(公告)号：US20110221035A1
公开(公告)日：2011-09-15
申请号：US13034373
申请日：2011-02-24
Applicant: Simon Jeannot , Michel Marty , Jean-Christophe Giraudin
Inventor： Simon Jeannot , Michel Marty , Jean-Christophe Giraudin
CPC classification number: H01L23/5223 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit is fabricated by producing metallization levels in insulating regions, the insulating region being formed of a first material having a first dielectric constant. At least one metal-insulator-metal capacitor is formed by providing metal electrodes in the metallization level, and locally replacing the first material, which is located between the metal electrodes, with a second material having a second dielectric constant greater than the first dielectric constant.
Abstract translation: 通过在绝缘区域中产生金属化水平来制造集成电路，绝缘区域由具有第一介电常数的第一材料形成。 通过在金属化水平中提供金属电极并且将位于金属电极之间的第一材料局部替换为具有大于第一介电常数的第二介电常数的第二材料，形成至少一个金属 - 绝缘体 - 金属电容器 。
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4.发明申请METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING DIELECTRIC ELEMENT 有权生产多孔电介质元件和相应电介质元件的方法公开(公告)号：US20100200964A1
公开(公告)日：2010-08-12
申请号：US12765840
申请日：2010-04-22
Applicant: Simon Jeannot , Laurent Favennec
Inventor： Simon Jeannot , Laurent Favennec
IPC: H01L29/06
CPC classification number: H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02343 , H01L21/3121 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/00
Abstract: A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.
Abstract translation: 通过形成第一电介质和第二电介质来制造多孔介电元件。 第二电介质分散在第一电介质中。 然后通过使用化学溶解从第二电介质去除第二电介质。 从第一电介质去除第二电介质留下第一电介质中的孔。 填充有空气的孔改善所得介电元件的总体介电常数。
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5.发明授权Method of producing a porous dielectric element and corresponding dielectric element 有权生产多孔电介质元件和相应电介质元件的方法公开(公告)号：US07732348B2
公开(公告)日：2010-06-08
申请号：US11949559
申请日：2007-12-03
Applicant: Simon Jeannot , Laurent Favennec
Inventor： Simon Jeannot , Laurent Favennec
IPC: H01L21/31
CPC classification number: H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02343 , H01L21/3121 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/00
Abstract: A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improves the overall dielectric constant of the resulting dielectric element.
Abstract translation: 通过形成第一电介质和第二电介质来制造多孔介电元件。 第二电介质分散在第一电介质中。 然后通过使用化学溶解从第二电介质去除第二电介质。 从第一电介质去除第二电介质留下第一电介质中的孔。 充满空气的孔改善了所得介电元件的总体介电常数。
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6.发明授权Method of producing a porous dielectric element and corresponding dielectric element 有权生产多孔电介质元件和相应电介质元件的方法公开(公告)号：US07923820B2
公开(公告)日：2011-04-12
申请号：US12765840
申请日：2010-04-22
Applicant: Simon Jeannot , Laurent Favennec
Inventor： Simon Jeannot , Laurent Favennec
IPC: H01L23/58
CPC classification number: H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02343 , H01L21/3121 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/00
Abstract: A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.
Abstract translation: 通过形成第一电介质和第二电介质来制造多孔介电元件。 第二电介质分散在第一电介质中。 然后通过使用化学溶解从第二电介质去除第二电介质。 从第一电介质去除第二电介质留下第一电介质中的孔。 填充有空气的孔改善所得介电元件的总体介电常数。
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7.发明申请METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING DIELECTRIC ELEMENT 有权生产多孔电介质元件和相应电介质元件的方法公开(公告)号：US20080142929A1
公开(公告)日：2008-06-19
申请号：US11949559
申请日：2007-12-03
Applicant: Simon Jeannot , Laurent Favennec
Inventor： Simon Jeannot , Laurent Favennec
IPC: H01L21/469 , H01L23/58
CPC classification number: H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02343 , H01L21/3121 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/00
Abstract: A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improves the overall dielectric constant of the resulting dielectric element.
Abstract translation: 通过形成第一电介质和第二电介质来制造多孔介电元件。 第二电介质分散在第一电介质中。 然后通过使用化学溶解从第二电介质去除第二电介质。 从第一电介质去除第二电介质留下第一电介质中的孔。 充满空气的孔改善了所得介电元件的总体介电常数。
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