公开(公告)号：US5080772A

公开(公告)日：1992-01-14

申请号：US572850

申请日：1990-08-24

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542

摘要： A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

摘要翻译： 偏置溅射涂覆装置设置有阴极靶组件，阴极靶组件具有中心电极，该中心电极可维持在相对于室阳极为负的可调电压电平，而相对于衬底上的阴极电压和偏置电压为正。 该设备用于制造诸如半导体晶片的溅射涂覆制品。 该方法提供了将中心电极上的电压调整到提高衬底上的离子通量分布均匀性的水平。 电极电压通常在-8伏至-20伏的范围内优化。

公开(公告)号：US5126028A

公开(公告)日：1992-06-30

申请号：US570943

申请日：1990-08-22

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands. The machine parameters control separately the sputtering from different regions of the sputtering surface of a one piece sputtering target by alternately energizing different plasmas over the different target regions and energizing the target in accordance with different machine parameters.

摘要翻译： 溅射涂层设备显示由输入或测量数据输入或计算的设置和替代机器参数，以供操作员选择。 该设备执行溅射涂覆工艺以根据所选择的机器参数产生溅射涂覆的物品。 可以由操作者输入创建该过程的人熟悉的工艺参数，例如所需的涂层厚度和所需的沉积速率。 在先前处理的晶片上的多个点处的实际涂层厚度的测量数据可以由操作者输入或者从晶片自动测量。 可以由操作者输入替代的机器参数，例如目标溅射功率，或从输入的过程参数或测量数据计算。 操作人员通过输入命令，根据选择选择并启动进程。 机器参数通过在不同的目标区域上交替地激励不同的等离子体，并根据不同的机器参数对目标进行激励，分别地控制一片溅射靶的溅射表面的不同区域的溅射。

公开(公告)号：US4957605A

公开(公告)日：1990-09-18

申请号：US339308

申请日：1989-04-17

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

IPC分类号： C23C14/35 ,  C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion. The operation of different target regions, such as the duty cycles or power levels for such regions, may be separately varied in response to the measurements or otherwise, to maintain uniform substrate coating as the target erodes. The target is thicker under the outer region and has an annular pole piece embedded to reduce the space separating the target erosion regions, and includes means to cool the target and reinforce it against thermal expansion.

公开(公告)号：US5415753A

公开(公告)日：1995-05-16

申请号：US95950

申请日：1993-07-22

申请人： Steven D. Hurwitt ,  Israel Wagner

发明人： Steven D. Hurwitt ,  Israel Wagner

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3447 ,  C23C14/0068 ,  C23C14/044 ,  H01J37/34 ,  H01J37/347

摘要： The aperture plate of the present invention is positioned between a sputter target and a substrate to be coated with a film of target material. The substantially non-collimating plate contains a plurality of apertures which intercept a percentage of the sputter particles while allowing other sputter particles to be deposited upon the substrate to form the film. The rate of deposition achieved by the aperture plate is less than the rate of sputtering so that the target may be sputtered at a sufficiently higher rate to reduce the formation of a reactant film on the sputter target while the deposition rate is sufficiently low to allow adequate reaction between a reactive gas and sputter particles to form the desired reactant film on the substrate. In accordance with another aspect of the invention, the apertures of the plate have different aspect ratios or different densities in various different regions of the plate to achieve various different deposition rates in different areas of the substrate. The aspect ratios of the apertures may be selectively varied to achieve a more uniform film thickness or a film of selectively varied thicknesses. The various aspect ratios are achieved by selectively varying a cross-sectional area and/or depth of the apertures in the plate.

摘要翻译： 本发明的孔板位于溅射靶和被覆材料的基片之间。 基本上非准直板包含多个孔，其拦截一定百分比的溅射颗粒，同时允许其它溅射颗粒沉积在基板上以形成膜。 通过孔板实现的沉积速度小于溅射速率，从而可以以足够高的速率溅射靶，以减少溅射靶上的反应物膜的形成，同时沉积速率足够低以允许足够的 反应气体和溅射颗粒之间的反应，以在衬底上形成所需的反应物膜。 根据本发明的另一方面，板的孔在板的各种不同区域具有不同的纵横比或不同的密度，以在基板的不同区域中实现各种不同的沉积速率。 可以选择性地改变孔的纵横比以实现更均匀的膜厚度或选择性变化的厚度的膜。 通过选择性地改变板中的孔的横截面面积和/或深度来实现各种纵横比。

公开(公告)号：US4871433A

公开(公告)日：1989-10-03

申请号：US95560

申请日：1987-09-10

申请人： Israel Wagner ,  Steven D. Hurwitt

发明人： Israel Wagner ,  Steven D. Hurwitt

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3405 ,  C23C14/351

摘要： A magnetron sputtering apparatus and method, in which the ion flux bombarding the substrate is made uniform. Countermagnet means are chosen and positioned such that the vertical components of the countermagnet field are of opposite direction and equal magnitude to the vertical components of the cathode magnet in the vicinity of the substrate. Thus, the cathode magnetic field lines become substantially flat in the vicinity of the substrate and do not cause the ion flux to be distributed on the substrate surface in a non-uniform manner. Measurement of ion current density on the substrate surface during operation of the invention reveals that the invention provides substantially constant flux at all points on the substrate surface.

摘要翻译： 一种磁控溅射装置和方法，其中轰击衬底的离子通量均匀。 反磁铁装置被选择和定位成使得反磁铁场的垂直分量与基板附近的阴极磁体的垂直分量具有相反的方向和相等的大小。 因此，阴极磁场线在基板附近变得基本平坦，并且不会使离子通量以不均匀的方式分布在基板表面上。 在本发明的操作期间测量衬底表面上的离子电流密度揭示了本发明在衬底表面上的所有点提供基本上恒定的通量。

公开(公告)号：US5346601A

公开(公告)日：1994-09-13

申请号：US60315

申请日：1993-05-11

申请人： Andrew Barada ,  Steven D. Hurwitt

发明人： Andrew Barada ,  Steven D. Hurwitt

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/04 ,  H01L21/203

CPC分类号： C23C14/046 ,  C23C14/0068

摘要： A sputter coating apparatus particularly useful for applying sputtered films, particularly reactively produced sputtered films such as titanium nitride, onto semiconductor wafers, is provided with a collimator that includes a grid of vanes for restricting the paths available for the sputtered material to take from the target toward the wafer. A flow of fresh reactive gas is maintained on the surface of the wafer by gas outlets carried by vanes of the collimator. The outlets are supplied with the gas through passages provided in the vanes, so that the gas supply does not contribute to the shadowing of the sputtered material from the wafer except in accordance with the intended shadowing for which the collimator is provided.

摘要翻译： 特别可用于将溅射膜，特别是反应生成的溅射膜（例如氮化钛）施加到半导体晶片上的溅射涂覆设备设置有准直器，该准直器包括用于限制溅射材料从靶中取出的路径 朝向晶圆。 通过由准直器的叶片承载的气体出口，在晶片的表面上保持新鲜的活性气体流。 出口通过设置在叶片中的通道供应气体，使得气体供应不对来自晶片的溅射材料的阴影有贡献，除了根据预定的准直器设置的阴影外。

公开(公告)号：US4472259A

公开(公告)日：1984-09-18

申请号：US316433

申请日：1981-10-29

申请人： Walter H. Class ,  Arnold J. Aronson ,  Steven D. Hurwitt ,  Michael L. Hill

发明人： Walter H. Class ,  Arnold J. Aronson ,  Steven D. Hurwitt ,  Michael L. Hill

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3405

摘要： A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. In other embodiments, end target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement.

摘要翻译： 一种用于磁控溅射系统的阴极组件，该系统具有阴极组件，该阴极组件具有基本上由期望溅射沉积到衬底上的材料形成的平行细长靶区段。 细长的目标区段各自设置有相对于基板的平面朝向另一个段倾斜的材料去除表面。 这种倾斜允许将从目标棒移除的材料聚焦到相对较窄的区域上，从而提高溅射操作的效率并减少清洗和真空泵送的机器停机时间。 在其他实施例中，提供端部目标段用于提高细长杆端部附近的膜沉积的效率。 末端目标区段设置有也倾斜的材料去除表面，并且与细长目标区段连接以形成矩形框架布置。

公开(公告)号：US4909695A

公开(公告)日：1990-03-20

申请号：US222327

申请日：1988-07-20

申请人： Steven D. Hurwitt ,  Miroslav Eror ,  Richard E. Biehl

发明人： Steven D. Hurwitt ,  Miroslav Eror ,  Richard E. Biehl

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67017 ,  H01L21/67751 ,  H01L21/67778 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139

摘要： The apparatus is provided with a main chamber divided into two chamber halves by a rotatable index plate. The plate rotates through a load lock station, through which wafer-like articles are inserted into and removed from the main chamber, and a series of processing stations, at each of which a process such as etching or sputter coating can be performed simultaneously upon different objects and sequentially upon the same objects. Each processing chamber is isolatable from the main chamber and other processing chambers during processing so that different substrates can be processed simultaneously at the various stations using different processes without cross contamination. Substrate holders resiliently mounted on the plate move transversely when compressed between a cup shaped back-plane device and the main chamber wall to separately seal each of the processing chambers from the main chamber.

摘要翻译： 该装置具有通过可旋转的折射板分成两个室半部的主室。 板旋转穿过负载锁定站，晶片状物品通过该装载锁定站插入主室和从主室移除，并且一系列处理站，每个处理站可以在不同的位置同时执行诸如蚀刻或溅射涂覆的工艺 对象并依次在相同的对象上。 每个处理室在处理过程中可与主室和其他处理室隔离，以便不同的基板可以使用不同的工艺在不同的工位处同时处理，而不会产生交叉污染。 弹性地安装在板上的基板固定件在杯形背面装置和主室壁之间被压缩时横向移动，以将每个处理室与主室单独地密封。

公开(公告)号：US4525262A

公开(公告)日：1985-06-25

申请号：US555449

申请日：1983-11-28

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3405

摘要： The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound. The localized magnetic plasma trap close to the substrate increases the chemical reaction rate at the substrate and reduces back sputtering, to result in a metallic compound coating having superior physical and chemical characteristics.

摘要翻译： 通过反应溅射或反应离子电镀在真空室中的金属化合物在基板上的成膜速率通过提供具有间隔开的磁极的基板支撑而产生具有离开载体的力线的磁场而显着增加 所述基板的表面暴露于金属涂层源并重新进入所述支撑件以将所述暴露表面包围在局部磁性电子捕获场中。 将反应性气体进料到室中，并且将偏置电压施加到衬底支撑件，足以产生与衬底表面紧密相邻的电离反应气体的致密辉光放电。 反应气体离子与沉积在暴露的基底表面上的金属颗粒与涂层源反应，形成所需金属化合物的膜。 靠近基板的局部磁等离子体阱增加了基板的化学反应速率，并减少了反溅射，从而导致具有优异的物理和化学特性的金属化合物涂层。

公开(公告)号：US4428816A

公开(公告)日：1984-01-31

申请号：US497798

申请日：1983-05-25

申请人： Walter H. Class ,  Robert G. Hieronymi ,  Steven D. Hurwitt

发明人： Walter H. Class ,  Robert G. Hieronymi ,  Steven D. Hurwitt

IPC分类号： C23C14/36 ,  C23C14/35 ,  H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3423 ,  H01J37/3408

摘要： A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. End target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement. An elongated inner pole piece has outwardly extending portions near each end to improve uniformity of a trapping magnetic field between the inner pole piece and a rectangular annular outer pole piece.

摘要翻译： 一种用于磁控溅射系统的阴极组件，该系统具有阴极组件，该阴极组件具有基本上由期望溅射沉积到衬底上的材料形成的平行细长靶区段。 细长的目标区段各自设置有相对于基板的平面朝向另一个段倾斜的材料去除表面。 这种倾斜允许将从目标棒移除的材料聚焦到相对较窄的区域上，从而提高溅射操作的效率并减少清洗和真空泵送的机器停机时间。 提供末端靶区段以提高在细长杆的端部附近的膜沉积的效率。 末端目标区段设置有也倾斜的材料去除表面，并且与细长目标区段连接以形成矩形框架布置。 细长的内极片在每端附近具有向外延伸的部分，以提高内极片与矩形环形外极片之间的捕获磁场的均匀性。