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    Magnetoresistance effect element with improved antiferromagnetic layer
    6.
    发明授权
    Magnetoresistance effect element with improved antiferromagnetic layer 失效
    具有改进反铁磁层的磁阻效应元件

    公开(公告)号：US5552949A

    公开(公告)日：1996-09-03

    申请号：US204676

    申请日：1994-03-02

    申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    IPC分类号： G11B5/39 ,  H01L43/08

    CPC分类号： G11B5/399 ,  H01L43/08

    摘要： An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0

    摘要翻译： 提出了一种交换耦合膜，其具有由N100-zMnz（其中N是选自由Cu，Ru，Rh，Re，Pd，Pt，Ag，Au，Os和...组成的组中的至少一种）的反铁磁膜 Ir;和24 75），并且具有四方晶系结构或由Cr100-xMx（其中M是选自元素周期表第3b族元素中的至少一种，Cu，Ru ，Rh，Re，Pt，Pd，Ag，Au，Os，Ir，Mn，Fe，Co和V; x在0

    Magnetoresistance effect element and magnetic recording apparatus
    7.
    发明授权
    Magnetoresistance effect element and magnetic recording apparatus 失效
    磁电阻效应元件和磁记录装置

    公开(公告)号：US5493465A

    公开(公告)日：1996-02-20

    申请号：US209927

    申请日：1994-03-14

    申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/08

    摘要： A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.

    摘要翻译： 磁阻效应元件具有介于其间的中间非磁性金属层的一对铁磁层。 中间非磁性金属层具有由至少两种非磁性金属材料形成的非磁性金属薄膜的叠层结构。 在非磁性金属薄膜的层压结构中，设置在铁磁层的界面侧上的非磁性金属薄膜的费米能量在旋转方向具有更接近费米能量的值，其电子自旋依赖平均自由度 在铁磁层的费米能量之间的路径很长。 这种非磁性金属薄膜之间设有非磁性金属薄膜。 由两种非磁性金属材料制成的非磁性金属薄膜之间的费米能的差异为0.5eV以上。 通过使用这样的中间非磁性金属层，虽然其厚度尽可能薄，铁磁层之间的交换耦合可以很小。 因此，可以提高电阻变化灵敏度。