INTEGRATED CIRCUIT LAYOUT METHOD AND SYSTEM

    公开(公告)号:US20210209284A1

    公开(公告)日:2021-07-08

    申请号:US17209918

    申请日:2021-03-23

    IPC分类号: G06F30/392 H01L27/02

    摘要: A method includes positioning a first active region adjacent to a pair of second active regions in an initial integrated circuit (IC) layout diagram of an initial cell, to align side edges of the first active region and corresponding side edges of each second active region of the pair of second active regions along a cell height direction. The first active region forms, together with the initial cell, a modified cell having a modified IC layout diagram. The side edges of the first active region and the corresponding side edges of each second active region extend along the cell height direction. A height dimension of the first active region in the cell height direction is less than half of a height dimension of each second active region of the pair of second active regions in the cell height direction. The positioning the first active region is executed by a processor.

    CLOCK GATING CIRCUIT AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20210226615A1

    公开(公告)日:2021-07-22

    申请号:US17095191

    申请日:2020-11-11

    IPC分类号: H03K3/037 H03K19/20 G06F1/12

    摘要: A clock gating circuit includes a NOR logic gate, a transmission gate, a cross-coupled pair of transistors, and a first transistor. The NOR logic gate is coupled to a first node, and receives a first and a second enable signal, and outputs a first control signal. The transmission gate is coupled between the first and a second node, and receives the first control signal, an inverted clock input signal and a clock output signal. The cross-coupled pair of transistors is coupled between the second node and an output node, and receives at least a second control signal. The first transistor includes a first gate terminal configured to receive the inverted clock input signal, a first drain terminal coupled to the output node, and a first source terminal coupled to a reference voltage supply. The first transistor adjusts the clock output signal responsive to the inverted clock input signal.

    METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20230403868A1

    公开(公告)日:2023-12-14

    申请号:US18447614

    申请日:2023-08-10

    IPC分类号: H10K19/10 H10K19/00

    摘要: A method includes forming a circuit region over a substrate. The circuit region includes at least one active region extending along a first direction, and at least one gate region extending across the at least one active region and along a second direction transverse to the first direction. At least one first input/output (TO) pattern and at least one second TO pattern are correspondingly formed in different first and second metal layers to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first TO pattern extends along a third direction oblique to both the first direction and the second direction. The at least one second TO pattern extends along a fourth direction oblique to both the first direction and the second direction, the fourth direction transverse to the third direction.

    CLOCK GATING CIRCUIT AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20230110352A1

    公开(公告)日:2023-04-13

    申请号:US18065327

    申请日:2022-12-13

    IPC分类号: H03K3/037 H03K19/20 G06F1/12

    摘要: A clock gating circuit includes a NOR logic gate, a transmission gate, a cross-coupled pair of transistors, and a first transistor. The NOR logic gate is coupled to a first node, and receives a first and a second enable signal, and outputs a first control signal. The transmission gate is coupled between the first and a second node, and receives the first control signal, an inverted clock input signal and a clock output signal. The cross-coupled pair of transistors is coupled between the second node and an output node, and receives at least a second control signal. The first transistor includes a first gate terminal configured to receive the inverted clock input signal, a first drain terminal coupled to the output node, and a first source terminal coupled to a reference voltage supply. The first transistor adjusts the clock output signal responsive to the inverted clock input signal.

    LOW-POWER FLIP-FLOP ARCHITECTURE WITH HIGH-SPEED TRANSMISSION GATES

    公开(公告)号:US20220239286A1

    公开(公告)日:2022-07-28

    申请号:US17338199

    申请日:2021-06-03

    IPC分类号: H03K3/037

    摘要: A semiconductor device and a method of operating a semiconductor device are provided. The semiconductor device includes a first latching circuit and a second latching circuit coupled to the first latching circuit. The second latching circuit includes a first feedback circuit and a first transmission circuit, the first feedback circuit configured to receive a first clock signal of a first phase and a second clock signal of a second phase, and the first transmission circuit configured to receive the second clock signal and a third clock signal of a third phase. The first feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the first transmission circuit is turned on by the second clock signal and the third clock signal.