公开(公告)号：US20220416096A1

公开(公告)日：2022-12-29

申请号：US17845050

申请日：2022-06-21

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Hideaki FUKUZAWA ,  Tetsuya SHIBATA ,  Tomohito MIZUNO

IPC: H01L31/0232 ,  G01R33/09 ,  H01F10/32

Abstract: A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

公开(公告)号：US20230304855A1

公开(公告)日：2023-09-28

申请号：US18190336

申请日：2023-03-27

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Tetsuya SHIBATA ,  Tomohito MIZUNO ,  Hideaki FUKUZAWA

IPC: G01J1/42

CPC classification number: G01J1/42

Abstract: An optical device includes a magnetic element and a light application part, wherein the light application part configured to apply light to the magnetic element, the magnetic element includes a first ferromagnetic layer to which the light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and magnetization of the first ferromagnetic layer is inclined with respect to both an in-plane direction in which the first ferromagnetic layer extends and a surface-perpendicular direction perpendicular to a surface on which the first ferromagnetic layer extends in a state in which the light is not applied from the light application part to the magnetic element.

公开(公告)号：US20190245254A1

公开(公告)日：2019-08-08

申请号：US16340471

申请日：2017-10-23

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Tetsuya SHIBATA ,  Tsuyoshi SUZUKI ,  Junichiro URABE ,  Atsushi SHIMURA

IPC: H01P1/218

CPC classification number: H01P1/218 ,  G11B5/39 ,  H01L43/08 ,  H03B15/00

Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

公开(公告)号：US20180316077A1

公开(公告)日：2018-11-01

申请号：US15962587

申请日：2018-04-25

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Junichiro URABE ,  Tsuyoshi SUZUKI ,  Atsushi SHIMURA

IPC: H01P1/218 ,  H01F10/32 ,  H01P3/08

Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.

公开(公告)号：US20180309046A1

公开(公告)日：2018-10-25

申请号：US15764826

申请日：2016-06-02

Applicant: TDK CORPORATION

Inventor： Junichiro URABE ,  Tetsuya SHIBATA ,  Atsushi SHIMURA ,  Takekazu YAMANE ,  Tsuyoshi SUZUKI

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01P1/215

CPC classification number: H01L43/08 ,  B82Y25/00 ,  H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01P1/215 ,  H03B15/006

Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.

公开(公告)号：US20240332323A1

公开(公告)日：2024-10-03

申请号：US18610629

申请日：2024-03-20

Applicant: TDK Corporation

Inventor： Takekazu YAMANE ,  Tetsuya SHIBATA ,  Takeshi NOJIRI ,  Weihao ZHANG ,  Hideaki FUKUZAWA

IPC: H01L27/144 ,  H01L31/02 ,  H01L31/032

CPC classification number: H01L27/1443 ,  H01L31/02005 ,  H01L31/032

Abstract: An optical detection device includes first photoelectric conversion element that outputs first output when first photoelectric conversion element is irradiated with light pulse, and second photoelectric conversion element that outputs second output when second photoelectric conversion element is irradiated with light pulse. The optical detection device is configured to combine first signal caused by first output and second signal caused by second output when first photoelectric conversion element and second photoelectric conversion element are irradiated with same light pulse each other, in a state where first condition and second condition are satisfied. The first condition is condition that time position of peak of first signal is different from time position of peak of second signal. The second condition is condition that sign of amount of change until the first signal reaches the peak is different from a sign of the amount of change until the second signal reaches the peak.

公开(公告)号：US20190081606A1

公开(公告)日：2019-03-14

申请号：US16123675

申请日：2018-09-06

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE

IPC: H03H2/00 ,  H01L43/02 ,  H01L43/10

CPC classification number: H03H2/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006

Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

公开(公告)号：US20140293474A1

公开(公告)日：2014-10-02

申请号：US13853869

申请日：2013-03-29

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Takahiko MACHITA ,  Naomichi DEGAWA ,  Minoru OTA ,  Kenta HAMAMOTO

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract translation: MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。

公开(公告)号：US20140268405A1

公开(公告)日：2014-09-18

申请号：US13842948

申请日：2013-03-15

Applicant: TDK Corporation

Inventor： Takahiko MACHITA ,  Naomichi DEGAWA ,  Takekazu YAMANE ,  Takumi YANAGISAWA ,  Satoshi MIURA ,  Kenta HAMAMOTO ,  Minoru OTA ,  Kenzo MAKINO ,  Shohei KAWASAKI

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/08

Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。

公开(公告)号：US20240329165A1

公开(公告)日：2024-10-03

申请号：US18598761

申请日：2024-03-07

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Tetsuya SHIBATA ,  Weihao ZHANG ,  Hideaki FUKUZAWA

IPC: G01R33/09 ,  G01R33/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: G01R33/091 ,  G01R33/0029 ,  G01R33/007 ,  G01R33/093 ,  G01R33/096 ,  H10N50/10 ,  H10N50/85 ,  G01R33/098

Abstract: This optical detection device includes a first photoelectric conversion element that outputs a first output, and a second photoelectric conversion element that outputs a second output, and is configured to combine a first signal caused by the first output with a second signal caused by the second output, in a state where a first condition and a second condition are satisfied. The first condition is a condition that an absolute value of an amount of change until the first signal reaches a peak is different from an absolute value of an amount of change until the second signal reaches a peak, and the second condition is a condition that a sign of the amount of change until the first signal reaches the peak is different from a sign of the amount of change until the second signal reaches the peak.