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    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
    2.
    发明申请
    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE 有权

    公开(公告)号：US20220254569A1

    公开(公告)日：2022-08-11

    申请号：US17589206

    申请日：2022-01-31

    Applicant: TDK CORPORATION

    Inventor： Takuma ARIIZUMI ,  Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Toshihiko KANEKO ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.

    METHOD OF MANUFACTURING LASER DIODE UNIT UTILIZING SUBMOUNT BAR
    5.
    发明申请
    METHOD OF MANUFACTURING LASER DIODE UNIT UTILIZING SUBMOUNT BAR 审中-公开
    制造激光二极管单元的方法

    公开(公告)号：US20150040390A1

    公开(公告)日：2015-02-12

    申请号：US14492244

    申请日：2014-09-22

    Applicant: TDK CORPORATION ,  ROHM CO., LTD. ,  SAE MAGNETICS (H.K.) LTD.

    Inventor： Koji SHIMAZAWA ,  Osamu SHINDO ,  Yoshihiro TSUCHIYA ,  Yasuhiro ITO ,  Kenji SAKAI

    IPC: H05K3/34

    CPC classification number: H05K3/3421 ,  B23K1/0016 ,  H01S5/02236 ,  H01S5/02272 ,  Y10T29/49144

    Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

    Abstract translation: 本发明的激光二极管单元的制造方法包括以下步骤：将激光二极管放置在形成在基座的安装表面上的焊料构件的顶部上，向激光二极管施加按压负载并将激光二极管按压在焊料构件上 接下来，在施加加压负荷的同时，通过在高于焊料构件的熔点的温度下加热焊料部件来熔化焊料部件，之后，通过冷却固化焊料部件将激光二极管接合到副安装台， 然后，除去加压负荷，通过在除去加压负荷后，在低于焊料构件的熔点的温度下加热焊料，软化固化的焊料，然后冷却并重新固化焊料。

    THERMALLY ASSISTED RECORDING HEAD UTILIZING LASER LIGHT WITH LIMITED WAVELENGTH RANGE
    6.
    发明申请
    THERMALLY ASSISTED RECORDING HEAD UTILIZING LASER LIGHT WITH LIMITED WAVELENGTH RANGE 有权
    用有限波长范围的热辅助记录头使用激光

    公开(公告)号：US20140269233A1

    公开(公告)日：2014-09-18

    申请号：US13830910

    申请日：2013-03-14

    Applicant: TDK Corporation

    Inventor： Shinji HARA ,  Tsutomu CHOU ,  Koji SHIMAZAWA ,  Eiji KOMURA ,  Seiichi TAKAYAMA ,  Yasuhiro ITO

    IPC: G11B13/04

    CPC classification number: G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: A thermally assisted magnetic recording head includes core that propagates laser light as propagation light, a near-field light generator that faces a portion of the core and extends to an air bearing surface (ABS), the near-field light generator coupled to the propagation light propagating through the core so as to generate a surface plasmon, propagating the surface plasmon to an end part facing the ABS, and generating near-field light at the end part to irradiate the near-field light to a magnetic recording medium, a main magnetic pole layer provided in the vicinity of the near-field light generator where an end part is positioned on the ABS, a laser diode that generates laser light of wavelength 890 nm to 1,000 nm and enters the laser light into the core, and a photodiode provided on a silicon substrate measures an intensity of the laser light entering from the laser diode to the core.

    Abstract translation: 热辅助磁记录头包括将激光作为传播光传播的芯，近场光发生器，其面对芯的一部分并延伸到空气轴承表面（ABS），近场光发生器耦合到传播 光传播通过芯，以产生表面等离子体，将表面等离子体传播到面向ABS的端部，并在端部产生近场光，以将近场光照射到磁记录介质，主 设置在近场光发生器附近的磁极层，端部位于ABS上;激光二极管，其生成波长为890nm至1000nm的激光并将激光进入芯中;以及光电二极管 设置在硅衬底上测量从激光二极管进入芯的激光的强度。

    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
    8.
    发明申请
    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE 有权

    公开(公告)号：US20220254568A1

    公开(公告)日：2022-08-11

    申请号：US17588582

    申请日：2022-01-31

    Applicant: TDK CORPORATION

    Inventor： Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Takuma ARIIZUMI ,  Toshihiko KANEKO ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric composition includes main-phase particles each including a main component having a perovskite crystal structure represented by a general formula of ABO3. At least a part of the main-phase particles has a core-shell structure. The dielectric composition includes RA, RB, M, and Si. Each of A, B, RA, RB, and M is one or more elements selected from a specific element group. SRA/SRB>CRA/CRB is satisfied, where CRA is an RA content (mol %) to the main component in terms of RA2O3, and CRB is an RB content (mol %) to the main component in terms of RB2O3, in the dielectric composition, and SRA is an average RA content (mol %), and SRB is an average RB content (mol %), in a shell part of the core-shell structure.

    DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT
    9.
    发明申请
    DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT 审中-公开

    公开(公告)号：US20200039887A1

    公开(公告)日：2020-02-06

    申请号：US16511286

    申请日：2019-07-15

    Applicant: TDK CORPORATION

    Inventor： Takuma ARIIZUMI ,  Toshihiko KANEKO ,  Nobuto MORIGASAKI ,  Yasuhiro ITO

    IPC: C04B35/47 ,  C04B35/468 ,  C04B35/49 ,  H01G4/12 ,  H01G4/30 ,  H01G4/005 ,  C04B35/628

    Abstract: The object of the present invention is to provide a dielectric ceramic composition having even improved insulation specific resistance and highly accelerated lifetime. A dielectric ceramic composition comprising a dielectric particle having a core-shell structure including a main component expressed by a general formula ABO3 (A is Ba and the like; and B is Ti and the like) and a rare earth element component R, in which a shell part of the core-shell structure has an average rare earth element concentration C of 0.3 atom % or more, and a rare earth element concentration gradient S is −0.010 atom %/nm≤S≤0.009 atom %/nm or a rare earth element concentration variation satisfies σ/C≤0.15 (a is a standard deviation of a rare earth element concentration and C is an average rare earth element concentration).

    DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR
    10.
    发明申请
    DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR 审中-公开

    公开(公告)号：US20190237254A1

    公开(公告)日：2019-08-01

    申请号：US16230154

    申请日：2018-12-21

    Applicant: TDK CORPORATION

    Inventor： Dan SAKURAI ,  Toshihiko KANEKO ,  Nobuto MORIGASAKI ,  Toshinari TAKAHASHI ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: The object of the present invention is to provide a dielectric ceramic composition having good properties, particularly good IR property and high temperature accelerated lifetime.The dielectric ceramic composition of the present invention has a main component made of a perovskite type compound expressed by a compositional formula of (Ba1-x-ySrxCay)m(Ti1-zZrz)O3 (note that, m, x, y, and z of the above compositional formula all represent molar ratios, and each satisfies 0.9≤m≤1.1, 0≤x≤0.5, 0≤y≤0.3, 0≤(x+y)≤0.6, and 0.03≤z≤0.3), anda first sub component made of an oxide of a rare earth element R (note that, R is at least one selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), whereinthe dielectric ceramic composition includes a dielectric particle and a particle boundary, and the dielectric particle include a complete solid solution particle in which Zr is solid dissolved to the entire dielectric particle,when Za represents a concentration of Zr in the dielectric ceramic composition in case a concentration of Ti atom in the dielectric ceramic composition is deemed to be 100 atom % and when Zb represents an average concentration of Zr in the complete solid solution particle in case a concentration of Ti atom in the complete solid solution particle is deemed to be 100 atom %,0.7

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