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1.
公开(公告)号:US20210375682A1
公开(公告)日:2021-12-02
申请号:US17405834
申请日:2021-08-18
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI , Tomomi KAWANO , Minoru SANUKI
IPC: H01L21/8239 , G11C11/16 , G11C11/18 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/04 , H01L43/08 , H01L43/10
Abstract: This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.
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公开(公告)号:US20210249470A1
公开(公告)日:2021-08-12
申请号:US16788419
申请日:2020-02-12
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Atsushi TSUMITA
IPC: H01L27/22 , H01L43/02 , H01L23/528 , G11C11/16
Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.
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公开(公告)号:US20210043831A1
公开(公告)日:2021-02-11
申请号:US17077165
申请日:2020-10-22
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.
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公开(公告)号:US20210012820A1
公开(公告)日:2021-01-14
申请号:US16921211
申请日:2020-07-06
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA
Abstract: A magnetic memory includes a storage element including a first ferromagnetic layer, a first conductive layer which faces the first ferromagnetic layer in a first direction and extends in a second direction different from the first direction, and a first conductive part and a second conductive part which are connected to the first conductive layer at positions which sandwich the first ferromagnetic layer in the second direction when seen in the first direction; and a plurality of first switching elements which are electrically connected to the first conductive part of the storage element.
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公开(公告)号:US20200350490A1
公开(公告)日:2020-11-05
申请号:US16935631
申请日:2020-07-22
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA
Abstract: A spin-orbit-torque type magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, and wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide.
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公开(公告)号:US20200321518A1
公开(公告)日:2020-10-08
申请号:US16956802
申请日:2019-02-26
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: A ferromagnetic laminated film includes a plurality of first magnetic layers, at least one second magnetic layer, and at least one first non-magnetic layer, in which the first magnetic layers are alternately laminated with the second magnetic layer or the first non-magnetic layer, and a material forming the first magnetic layers is different from a material forming the second magnetic layer, and the first magnetic layers, the first non-magnetic layer, and the second magnetic layer are a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the first non-magnetic layer, and a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the second magnetic layer.
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7.
公开(公告)号:US20190319183A1
公开(公告)日:2019-10-17
申请号:US16467157
申请日:2018-08-08
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.
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公开(公告)号:US20190206603A1
公开(公告)日:2019-07-04
申请号:US16227850
申请日:2018-12-20
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H01F10/3286 , G11C11/161 , G11C11/18 , H01L43/04 , H01L43/14
Abstract: The spin-orbit torque magnetization rotational element includes a spin-orbit torque wiring layer which extends in an X direction and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer. The first ferromagnetic layer has shape anisotropy and has a major axis in the X direction. An easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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公开(公告)号:US20190067563A1
公开(公告)日:2019-02-28
申请号:US16055589
申请日:2018-08-06
Applicant: TDK CORPORATION
Inventor: Eiji KOMURA , Yohei SHIOKAWA
CPC classification number: H01L43/08 , G01R33/093 , G01R33/098 , G11C11/161 , H01L43/04 , H01L43/06
Abstract: Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.
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10.
公开(公告)号:US20180351085A1
公开(公告)日:2018-12-06
申请号:US15778577
申请日:2016-11-25
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.
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