METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM
    1.
    发明申请
    METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM 有权
    使用气体束离子束的表面轮廓校正方法

    公开(公告)号:US20160322266A1

    公开(公告)日:2016-11-03

    申请号:US15142147

    申请日:2016-04-29

    Applicant: TEL Epion Inc.

    Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

    Abstract translation: 描述了用于校正衬底上的表面轮廓的方法。 特别地,该方法包括接收具有由第一材料和第二材料构成的非均质层的基底,其中所述异质层具有暴露第一材料和第二材料的初始上表面,并且限定穿过基底的第一表面轮廓 。 该方法还包括设置异质层的目标表面轮廓,使用气体簇离子束(GCIB)蚀刻工艺选择性地去除第一材料的至少一部分,以及使第二材料下方的第一材料凹陷,然后选择性地 去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面,并且限定第二表面轮廓,其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

    MULTI-STEP LOCATION SPECIFIC PROCESS FOR SUBSTRATE EDGE PROFILE CORRECTION FOR GCIB SYSTEM
    2.
    发明申请
    MULTI-STEP LOCATION SPECIFIC PROCESS FOR SUBSTRATE EDGE PROFILE CORRECTION FOR GCIB SYSTEM 有权
    用于GCIB系统的基板边缘轮廓校正的多步位置特定过程

    公开(公告)号:US20150137006A1

    公开(公告)日:2015-05-21

    申请号:US14548550

    申请日:2014-11-20

    Applicant: TEL Epion Inc.

    Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

    Abstract translation: 公开了一种用于通过气体簇离子束(GCIB)或任何其它类型的离子束扫描衬底或其它工件的装置,系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板,并且通过两次运动通过GCIB在两个方向上进行扫描:往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动,所述皮带驱动系统被配置为降低工件扫描装置的故障率。

    Multi-step location specific process for substrate edge profile correction for GCIB system
    6.
    发明授权
    Multi-step location specific process for substrate edge profile correction for GCIB system 有权
    GCIB系统基板边缘轮廓校正的多步位置特定工艺

    公开(公告)号:US09105443B2

    公开(公告)日:2015-08-11

    申请号:US14548550

    申请日:2014-11-20

    Applicant: TEL Epion Inc.

    Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

    Abstract translation: 公开了一种用于通过气体簇离子束(GCIB)或任何其它类型的离子束扫描衬底或其它工件的装置,系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板,并且通过两次运动通过GCIB在两个方向上进行扫描:往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动,所述皮带驱动系统被配置为降低工件扫描装置的故障率。

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