公开(公告)号：US20230245891A1

公开(公告)日：2023-08-03

申请号：US17589329

申请日：2022-01-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bhaskar Srinivasan ,  Pushpa Mahalingam ,  Mahalingam Nandakumar ,  Mona Eissa ,  Corinne Gagnet ,  Christopher Whitesell

IPC: H01L21/28 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8234

CPC classification number: H01L21/28052 ,  H01L27/088 ,  H01L29/4933 ,  H01L21/823443

Abstract: A system and method for growing fine grain polysilicon. In one example, the method of forming an integrated circuit includes forming a dielectric layer over a semiconductor substrate, and forming a polysilicon layer over the dielectric layer. The polysilicon layer is formed by a chemical vapor deposition process that includes providing a gas flow including disilane and hydrogen gas over the semiconductor substrate.

公开(公告)号：US10005662B2

公开(公告)日：2018-06-26

申请号：US15680996

申请日：2017-08-18

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J. R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: B81C1/00 ,  G01R33/04 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US20170346000A1

公开(公告)日：2017-11-30

申请号：US15605540

申请日：2017-05-25

Applicant: Texas Instruments Incorporated

Inventor： Mona Eissa ,  Dok Won Lee ,  Byron Shulver ,  Yousong Zhang

IPC: H01L43/12 ,  H01L43/02 ,  H01F41/14 ,  H01F1/147 ,  H01L43/10 ,  H01L27/22 ,  G01R33/00 ,  G01R33/04

CPC classification number: H01L43/12 ,  G01R33/0052 ,  G01R33/04 ,  H01F10/265 ,  H01F41/046 ,  H01F41/20 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

公开(公告)号：US10199573B2

公开(公告)日：2019-02-05

申请号：US15605540

申请日：2017-05-25

Applicant: Texas Instruments Incorporated

Inventor： Mona Eissa ,  Dok Won Lee ,  Byron Shulver ,  Yousong Zhang

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G01R33/04 ,  G01R33/00 ,  H01F10/26 ,  H01F41/04 ,  H01F41/20

Abstract: A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

公开(公告)号：US20170341934A1

公开(公告)日：2017-11-30

申请号：US15680996

申请日：2017-08-18

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J.R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: B81C1/00 ,  G01R33/00 ,  G01R33/04

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US20170267521A1

公开(公告)日：2017-09-21

申请号：US15072852

申请日：2016-03-17

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J.R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: B81C1/00 ,  G01R33/04 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US10017851B2

公开(公告)日：2018-07-10

申请号：US14979003

申请日：2015-12-22

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  Mona Eissa ,  Neal Thomas Murphy

IPC: G01R33/04 ,  C23C16/06 ,  C23C16/56 ,  G01R33/05

CPC classification number: C23C16/06 ,  C23C16/56 ,  G01R33/04 ,  G01R33/045 ,  G01R33/05

Abstract: A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.

公开(公告)号：US09771261B1

公开(公告)日：2017-09-26

申请号：US15072852

申请日：2016-03-17

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J. R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: G01R33/04 ,  B81C1/00 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.