公开(公告)号：US10676668B2

公开(公告)日：2020-06-09

申请号：US16220507

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: C09K13/02 ,  H01L29/66 ,  H01L21/3213 ,  C09K13/08 ,  C09K13/00

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

公开(公告)号：US10179878B2

公开(公告)日：2019-01-15

申请号：US15657537

申请日：2017-07-24

Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: H01L21/3213 ,  H01L29/66 ,  C09K13/08 ,  C09K13/02

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

公开(公告)号：US11735426B2

公开(公告)日：2023-08-22

申请号：US17401845

申请日：2021-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Li-Min Chen ,  Neng-Jye Yang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Kuo-Bin Huang

IPC: H01L21/28 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/08 ,  H01L29/78 ,  H01L29/165 ,  H01L29/267

CPC classification number: H01L21/28247 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/32134 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

公开(公告)号：US20210384034A1

公开(公告)日：2021-12-09

申请号：US17401845

申请日：2021-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Li-Min Chen ,  Neng-Jye Yang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Kuo-Bin Huang

IPC: H01L21/28 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/08 ,  H01L29/78 ,  H01L29/165 ,  H01L29/267

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.