公开(公告)号：US20210358750A1

公开(公告)日：2021-11-18

申请号：US17071554

申请日：2020-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L51/00 ,  H01L29/06

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduced the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20240105515A1

公开(公告)日：2024-03-28

申请号：US18521045

申请日：2023-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Tzu-Ang Chao ,  Chun-Chieh Lu ,  Hung-Li Chiang ,  Tzu-Chiang Chen ,  Lain-Jong Li

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K10/46 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/823412 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/78696 ,  H10K10/464 ,  H10K10/474 ,  H10K10/484 ,  H10K10/486 ,  H10K71/12 ,  H10K85/221

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

公开(公告)号：US20220352312A1

公开(公告)日：2022-11-03

申请号：US17813777

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Tzu-Ang Chao ,  Chun-Chieh Lu ,  Hung-Li Chiang ,  Tzu-Chiang Chen ,  Lain-Jong Li

IPC: H01L29/06 ,  H01L51/05 ,  H01L51/00 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/423

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

公开(公告)号：US20240390861A1

公开(公告)日：2024-11-28

申请号：US18789443

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: B01D67/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US12151213B2

公开(公告)日：2024-11-26

申请号：US18356636

申请日：2023-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  B01D67/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US11854895B2

公开(公告)日：2023-12-26

申请号：US17813777

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Tzu-Ang Chao ,  Chun-Chieh Lu ,  Hung-Li Chiang ,  Tzu-Chiang Chen ,  Lain-Jong Li

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K10/46 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/823412 ,  H01L21/0262 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/78696 ,  H10K10/464 ,  H10K10/474 ,  H10K10/484 ,  H10K10/486 ,  H10K71/12 ,  H10K85/221

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

公开(公告)号：US11342181B2

公开(公告)日：2022-05-24

申请号：US17071554

申请日：2020-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L51/00 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L51/05 ,  H01L51/56 ,  H01L51/10 ,  H01L29/786

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20220262635A1

公开(公告)日：2022-08-18

申请号：US17736505

申请日：2022-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L51/00 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L51/05 ,  H01L51/56 ,  H01L51/10 ,  H01L29/786

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20210134992A1

公开(公告)日：2021-05-06

申请号：US16926766

申请日：2020-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Lu ,  Chao-Ching Cheng ,  Tzu-Ang Chao ,  Lain-Jong Li

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A transistor device having fin structures, source and drain terminals, channel layers and a gate structure is provided. The fin structures are disposed on a material layer. The fin structures are arranged in parallel and extending in a first direction. The source and drain terminals are disposed on the fin structures and the material layer and cover opposite ends of the fin structures. The channel layers are disposed respectively on the fin structures, and each channel layer extends between the source and drain terminals on the same fin structure. The gate structure is disposed on the channel layers and across the fin structures. The gate structure extends in a second direction perpendicular to the first direction. The materials of the channel layers include a transition metal and a chalcogenide, the source and drain terminals include a metallic material, and the channel layers are covalently bonded with the source and drain terminals.

公开(公告)号：US20240379440A1

公开(公告)日：2024-11-14

申请号：US18782274

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Tzu-Ang Chao ,  Chun-Chieh Lu ,  Hung-Li Chiang ,  Tzu-Chiang Chen ,  Lain-Jong Li

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K10/46 ,  H10K71/12 ,  H10K85/20

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.