公开(公告)号：US20250056852A1

公开(公告)日：2025-02-13

申请号：US18447913

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Liang-Yin Chen ,  Chi On Chui

IPC: H01L29/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A method includes forming first nanostructures over a substrate, then forming second nanostructures over the plurality of first nanostructures. A first source/drain region is epitaxially grown adjacent the first nanostructures, and a second source/drain region is epitaxially grown over the first source/drain region and adjacent the second nanostructures. An implantation process is performed to implant impurities into the second source/drain region, wherein the implantation process forms an amorphous region within the second source/drain region. At least one rapid thermal process is performed on the second source/drain region, wherein performing each rapid thermal process recrystallizes a portion of the amorphous region.

公开(公告)号：US12218196B2

公开(公告)日：2025-02-04

申请号：US17670924

申请日：2022-02-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Chun-Hung Wu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

公开(公告)号：US20240387700A1

公开(公告)日：2024-11-21

申请号：US18786464

申请日：2024-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Liang-Yin Chen ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a semiconductor fin extending from a substrate. A dummy gate stack is formed over the semiconductor fin. The dummy gate stack extends along sidewalls and a top surface of the semiconductor fin. The semiconductor fin is patterned to form a recess in the semiconductor fin. A semiconductor material is deposited in the recess. An implantation process is performed on the semiconductor material. The implantation process includes implanting first implants into the semiconductor material and implanting second implants into the semiconductor material. The first implants have a first implantation energy. The second implants have a second implantation energy different from the first implantation energy.

公开(公告)号：US12148672B2

公开(公告)日：2024-11-19

申请号：US17581611

申请日：2022-01-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Chun Huang ,  Shu Ling Liao ,  Fang-Yi Liao ,  Yu-Chang Lin

IPC: H01L21/00 ,  H01L21/3115 ,  H01L21/8234 ,  H01L27/088

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

公开(公告)号：US20230261055A1

公开(公告)日：2023-08-17

申请号：US18306851

申请日：2023-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Tien-Shun Chang ,  Chun-Feng Nieh ,  Huicheng Chang

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66 ,  H01L21/266 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L29/1054 ,  H01L29/7851 ,  H01L29/7834 ,  H01L29/0653 ,  H01L21/26513 ,  H01L29/66795 ,  H01L21/266 ,  H01L21/324 ,  H01L21/2253 ,  H01L29/6659 ,  H01L21/26586

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.

公开(公告)号：US11670683B2

公开(公告)日：2023-06-06

申请号：US17394399

申请日：2021-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Tien-Shun Chang ,  Chun-Feng Nieh ,  Huicheng Chang

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66 ,  H01L21/266 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L29/1054 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.

公开(公告)号：US20220037465A1

公开(公告)日：2022-02-03

申请号：US17119102

申请日：2020-12-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L29/775 ,  H01L29/66

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

公开(公告)号：US20210367038A1

公开(公告)日：2021-11-25

申请号：US17394399

申请日：2021-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Tien-Shun Chang ,  Chun-Feng Nieh ,  Huicheng Chang

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66 ,  H01L21/266 ,  H01L21/324 ,  H01L21/225

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.

公开(公告)号：US12100738B2

公开(公告)日：2024-09-24

申请号：US18306851

申请日：2023-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Tien-Shun Chang ,  Chun-Feng Nieh ,  Huicheng Chang

IPC: H01L29/10 ,  H01L21/225 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1054 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.

公开(公告)号：US20220028707A1

公开(公告)日：2022-01-27

申请号：US16934762

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chang Lin ,  Tien-Shun Chang ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  H01L21/265

Abstract: Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.