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公开(公告)号：US20240389483A1
公开(公告)日：2024-11-21
申请号：US18317118
申请日：2023-05-15
Inventor： Yu-Wei Ting , Harry-Hak-Lay Chuang , Kuo-Pin Chang , Kuo-Ching Huang
Abstract: An embodiment phase change material (PCM) switch may include a phase change material element, a first electrode, a second electrode, and a direct heating element including an ionic resistance change material contacting the phase change material element. The phase change material element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase or from an electrically insulating phase to an electrically conducting phase by application of a heat pulse generated by the heating element. The PCM switch may further include a switching electrode contacting the ionic resistance change material such that the ionic resistance change material may be switched from a high resistance to a low resistance state by application of voltages to the first electrode, the second electrode, and the switching electrode. Electrical currents within the ionic resistance change material may generate heat that switches the phase change material element.
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公开(公告)号：US20240387516A1
公开(公告)日：2024-11-21
申请号：US18317986
申请日：2023-05-16
Inventor： Kuo-Pin Chang , Chien Hung Liu , Yu-Wei Ting , Kuo-Ching Huang
IPC: H01L27/06 , H01L23/34 , H01L23/373 , H01L23/522 , H01L27/088 , H02M1/00 , H02M3/157
Abstract: A device structure includes a voltage regulator circuit, which includes: a first semiconductor die including a pulse width modulation (PWM) circuit and connected to a PWM voltage output node at which a pulsed voltage output is generated; and a series connection of an inductor and a parallel connection circuit, the parallel connection circuit including a parallel connection of capacitor-switch assemblies. A first end node of the series connection is connected to the PWM voltage output node; a second end node of the series connection is connected to electrical ground; each of the capacitor-switch assemblies includes a respective series connection of a respective capacitor and a respective switch; and each switch within the capacitor-switch assemblies is located within the first semiconductor die.
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公开(公告)号：US20240387399A1
公开(公告)日：2024-11-21
申请号：US18317994
申请日：2023-05-16
Inventor： Fu-Hai Li , Chien Hung Liu , Hsien Jung Chen , Kuo-Ching Huang , Harry-Hak-Lay Chuang
IPC: H01L23/552 , H01L23/00 , H01L23/48 , H01L23/522
Abstract: A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.
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公开(公告)号：US20240250089A1
公开(公告)日：2024-07-25
申请号：US18627692
申请日：2024-04-05
Inventor： Harry-Hak-Lay Chuang , Wei-Cheng Wu , Chien Hung Liu , Hsin Fu Lin , Hsien Jung Chen , Henry Wang , Tsung-Hao Yeh , Kuo-Ching Huang
IPC: H01L27/12 , H01L21/762 , H01L21/84 , H01L29/66
CPC classification number: H01L27/1203 , H01L21/76251 , H01L21/76283 , H01L21/84 , H01L29/66772
Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.
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5.发明公开公开(公告)号：US20240099167A1
公开(公告)日：2024-03-21
申请号：US18303692
申请日：2023-04-20
Inventor： Fu-Hai Li , Yi Ching Ong , Kuo-Ching Huang
CPC classification number: H10N70/8613 , H10N70/011 , H10N70/231 , H10N70/823 , H10N70/8413 , H10N70/8828
Abstract: An embodiment phase change material (PCM) switch may include a PCM element having a first electrode and a second electrode, a heating element coupled to a first side of the PCM element, and a heat spreader formed on a second side of the PCM element opposite to the heating element. The PCM element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase by application of a heat pulse provided by the heating element. The first electrode, the second electrode, the PCM element, and the heat spreader may be configured as an RF switch that blocks RF signals when the phase change material element is the electrically insulating phase and conducts RF signals when the when the phase change material element is in the electrically conducting phase. The heat spreader may be electrically isolated from the heating element and the PCM element.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230422643A1
公开(公告)日：2023-12-28
申请号：US17851072
申请日：2022-06-28
Inventor： Kuo-Pin Chang , Yu-Wei Ting , Kuo-Ching Huang
CPC classification number: H01L45/1286 , H01L27/2463 , H01L45/1675 , H01L45/06 , H01L45/1226 , H01L45/148 , H01L45/143 , H01L45/144
Abstract: A semiconductor structure comprising a first electrode, a second electrode, a phase-change material (PCM) line in contact with and positioned between the first electrode and the second electrode, at least two heater lines positioned between the first electrode and the second electrode, and an isolation layer positioned between the PCM line and the at least two heater lines is provided. A method of forming a semiconductor structure is provided, the method including forming a dielectric isolation layer having a planar top surface over a substrate, forming at least two heater lines over the planar top surface, forming at least one heater-capping dielectric plate over the at least two heater lines, forming a phase-change material (PCM) line over the at least one heater-capping dielectric plate, forming a first electrode and a second electrode, and forming a PCM-capping dielectric plate over the PCM line.
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7.发明申请公开(公告)号：US20240397837A1
公开(公告)日：2024-11-28
申请号：US18321081
申请日：2023-05-22
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Chien Hung Liu , Kuo-Pin Chang , Hung-Ju Li
Abstract: An embodiment phase change material switch may include a first phase change material element, a second phase change material element, a first conductor electrically connected to a first end of each of the first phase change material element and the second phase change material element such that the first conductor is configured as a first terminal of an electrical circuit having a parallel configuration, a second conductor electrically connected to a second end of each of the first phase change material element and the second phase change material element such that the second conductor is configured as a second terminal of the electrical circuit having the parallel configuration, and a heating device coupled to the first phase change material element and to the second phase change material element and configured to supply a heat pulse to the first phase change material element and to the second phase change material element.
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8.发明公开公开(公告)号：US20240114812A1
公开(公告)日：2024-04-04
申请号：US18304513
申请日：2023-04-21
Inventor： Fu-Hai Li , Kuo-Ching Huang , Yi Ching Ong
CPC classification number: H10N70/8613 , H10N70/011 , H10N70/231 , H10N70/823 , H10N70/8413 , H04B1/44
Abstract: A switch includes a heater layer, a phase change material (PCM) layer on the heater layer, and a spreader layer formed in proximity to the PCM layer and including a central region with a first thermal conductivity and an edge region with a second thermal conductivity different than the first thermal conductivity. A method of forming a switch includes forming a heater layer, forming a phase change material (PCM) layer on the heater layer, and forming a spreader layer in proximity to the PCM layer, such that the spreader layer includes a central region with a first thermal conductivity and an edge region with a second thermal conductivity different than the first thermal conductivity.
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公开(公告)号：US20230422517A1
公开(公告)日：2023-12-28
申请号：US17849755
申请日：2022-06-27
Inventor： Hung-Ju LI , Kuo-Pin Chang , Yu-Wei Ting , Yu-Sheng Chen , Ching-En Chen , Kuo-Ching Huang
IPC: H01L27/24
CPC classification number: H01L27/2427
Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.
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公开(公告)号：US20230360711A1
公开(公告)日：2023-11-09
申请号：US17737259
申请日：2022-05-05
Inventor： Kuo-Pin Chang , Kuo-Ching Huang
CPC classification number: G11C17/16 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/004 , G11C13/0069
Abstract: A one-time programmable (OTP) memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, each memory cell of the plurality of memory cells including a first terminal coupled to a bit line of the plurality of bit lines, a second terminal coupled to a word line of the plurality of word lines, and a selector coupled between the first terminal and the second terminal and having a threshold voltage that is alterable by an electric current.
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