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公开(公告)号：US08133321B2
公开(公告)日：2012-03-13
申请号：US11886065
申请日：2006-05-23
IPC分类号： C30B25/18
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45525 , C30B23/02 , C30B25/02 , C30B25/18
摘要： A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
摘要翻译： 一种碳化硅单晶的制造方法，其中碳化硅单晶层在单晶衬底的表面上同构外延生长或异质外延生长，其中沿着第一方向延伸的多个基本上平行的波纹脊 所述单晶衬底表面形成在所述单晶衬底表面上; 所述单晶衬底表面上的每个波纹脊具有随着每个波纹脊在第一方向上延伸的波状的高度; 并且布置隆起脊，使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。
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公开(公告)号：US20080289570A1
公开(公告)日：2008-11-27
申请号：US11886065
申请日：2006-05-23
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45525 , C30B23/02 , C30B25/02 , C30B25/18
摘要： This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate.The process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is epitaxially grown on the surface of a single crystal substrate is a process in which a plurality of undulations that extend in a single, substantially parallel direction on the substrate surface is formed on the single crystal substrate surface; undulation ridges on the single crystal substrate undulate in the thickness direction of the single crystal substrate; and the undulations are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
摘要翻译： 本发明减少了在单晶衬底上外延生长碳化硅单晶时在碳化硅单晶中发生的平面缺陷。 在单晶基板的表面上外延生长碳化硅单晶层的碳化硅单晶的制造方法是在基板表面上沿单个大致平行的方向延伸的多个起伏 形成在单晶基板表面上; 单晶基板上的起伏脊在单晶基板的厚度方向上波动; 并且布置波纹，使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。
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3.发明申请SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 有权硅碳化硅基板，半导体器件及制造碳化硅基板的方法公开(公告)号：US20130234164A1
公开(公告)日：2013-09-12
申请号：US13885467
申请日：2011-11-15
CPC分类号： H01L21/02529 , C30B29/36 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02658 , H01L29/1608
摘要： There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.
摘要翻译： 提供由碳化硅组成的碳化硅衬底，其包括内部的封装区域，其在碳化硅和封装区域之间形成非相干边界，其中碳化硅中堆垛层错的传播被阻挡。
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公开(公告)号：US20130228797A1
公开(公告)日：2013-09-05
申请号：US13885573
申请日：2011-11-15
IPC分类号： H01L29/16
CPC分类号： H01L21/02529 , C30B29/36 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02658 , H01L29/1608
摘要： To provide a silicon carbide substrate having at least one or more main surfaces, including: a plurality of encapsulated regions inside, wherein the plurality of encapsulated regions are distributed in a direction approximately parallel to one of the main surfaces, with each encapsulated region positioned at a distance of 100 nm or more and 100 μm or less from the main surfaces to inside a substrate, and each encapsulated region having a width of 100 nm or more and 100 μm or less in a direction parallel to the main surfaces.
摘要翻译： 为了提供具有至少一个或多个主表面的碳化硅衬底，包括：内部的多个封装区域，其中所述多个封装区域沿大致平行于主表面之一的方向分布，每个封装区域位于 从主表面到基板内的距离为100nm以上且100μm以下的距离，并且在与主表面平行的方向上具有100nm以上且100μm以下的宽度的每个封装区域。
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5.发明授权Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate 有权碳化硅衬底，半导体器件和制造碳化硅衬底的方法公开(公告)号：US08890170B2
公开(公告)日：2014-11-18
申请号：US13885467
申请日：2011-11-15
CPC分类号： H01L21/02529 , C30B29/36 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02658 , H01L29/1608
摘要： There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.
摘要翻译： 提供由碳化硅组成的碳化硅衬底，其包括内部的封装区域，其在碳化硅和封装区域之间形成非相干边界，其中碳化硅中堆垛层错的传播被阻挡。
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6.发明授权Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element 失效制造碳化硅，碳化硅，复合材料和半导体元件的方法公开(公告)号：US06821340B2
公开(公告)日：2004-11-23
申请号：US09867467
申请日：2001-05-31
IPC分类号： C30B2502
摘要： To provide a method of manufacturing silicon carbide by forming silicon carbide on a substrate surface from an atmosphere containing a silicon carbide feedstock gas comprising at least a silicon source gas and a carbon source gas under condition 1 or 2 below: Condition 1: the partial pressure ps of silicon source gas is constant (with ps>0), the partial pressure of carbon source gas consists of a state pc1 and a state pc2 that are repeated in alternating fashion, wherein pc1 and pc2 denote partial pressures of carbon source gas, pc1>pc2, and pc1/ps falls within a range of 1-10 times the attachment coefficient ratio (Ss/Sc), pc2/ps falls within a range of less than one time Ss/Sc; Condition 2: the partial pressure pc of carbon source gas is constant (with pc>0), the partial pressure of silicon source gas consists of a state ps1 and a state ps2 that are repeated in alternating fashion, wherein ps1 and ps2 denote partial pressures of silicon source gas, ps1
摘要翻译： 为了提供一种制造碳化硅的方法，该方法是在条件1或2以下从包含至少硅源气体和碳源气体的含碳化硅原料气体的气氛的基板表面上形成碳化硅。条件1：分压 硅源气体的ps是常数（ps> 0），碳源气体的分压由交替地重复的状态pc1和状态pc2组成，其中pc1和pc2表示碳源气体的分压，pc1 pc2和pc1 / ps落在安装系数比（Ss / Sc）的1-10倍的范围内，pc2 / ps落在小于1次Ss / Sc的范围内;条件2： 碳源气体是恒定的（pc> 0），硅源气体的分压由以交替方式重复的状态ps1和状态ps2组成，其中ps1和ps2表示硅源气体的分压ps1
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公开(公告)号：US07101774B2
公开(公告)日：2006-09-05
申请号：US10227336
申请日：2002-08-26
摘要： Provided is a method of manufacturing compound single crystals by epitaxially growing a compound single crystal layer differing from the substrate in which the planar defects generated in the crystal that is epitaxially grown are reduced. The method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate. Plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.
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公开(公告)号：US06416578B1
公开(公告)日：2002-07-09
申请号：US09515134
申请日：2000-02-29
IPC分类号： C30B2502
CPC分类号： C23C16/325 , C30B25/02 , C30B25/18 , C30B29/36
摘要： There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.
摘要翻译： 公开了一种制造碳化硅膜的方法，其中晶体取向在单晶衬底表面上继续并且碳化硅被允许外延生长，该方法包括以下步骤：完全或部分地为衬底表面提供多个 起伏在一个方向上平行延伸; 并允许碳化硅在衬底表面上生长。
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公开(公告)号：US06736894B2
公开(公告)日：2004-05-18
申请号：US10227227
申请日：2002-08-26
IPC分类号： C30B2502
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： To provide a method of manufacturing compound semiconductor single crystals such as silicon carbide and gallium nitride by epitaxial growth methods, that is capable of yielding compound single crystals of comparatively low planar defect density. The method of manufacturing compound single crystals in which two or more compound single crystalline layers identical to or differing from a single crystalline substrate are sequentially epitaxially grown on the surface of said substrate. At least a portion of said substrate surface has plural undulations extending in a single direction and second and subsequent epitaxial growth is conducted after the formation of plural undulations extending in a single direction in at least a portion of the surface of the compound single crystalline layer formed proximately.
摘要翻译： 为了提供通过外延生长方法制造化合物半导体单晶如碳化硅和氮化镓的方法，其能够产生具有相对低的平面缺陷密度的复合单晶。 制造其中两个或多个与单晶衬底相同或不同的化合物单晶层的化合物单晶的方法在所述衬底的表面上顺序地外延生长。 所述衬底表面的至少一部分具有沿单个方向延伸的多个起伏，并且在形成复合单晶层的表面的至少一部分中的单一方向上形成多个起伏之后进行第二次和随后的外延生长 接近
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公开(公告)号：US06703288B2
公开(公告)日：2004-03-09
申请号：US10140187
申请日：2002-05-08
IPC分类号： H01L2120
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/406 , Y10S438/931
摘要： Provided are a compound semiconductor crystal substrate capable of reducing planar defects such as twins and anti-phase boundaries occurring in epitaxially grown crystals without additional steps beyond epitaxial growth, and a method of manufacturing the same. A compound single crystal substrate, the basal plane of which is a nonpolar face, with said basal plane having a partial surface having polarity (a partial polar surface). Said partial polar surface is a polar portion of higher surface energy than said basal plane. A method of manufacturing the compound single crystal substrate, comprising the steps of: epitaxially growing a compound single crystal in the normal direction on a basal plane of a compound single crystal substrate wherein the basal plane is a nonpolar face and has a partial polar surface in a portion thereof, and either cutting the compound single crystal layer that has been grown in parallel to the basal plane, or removing at least said substrate to obtain a compound single crystal block, a basal plane of which is a nonpolar face only having a partial polar surface with the highest surface energy in a portion thereof.
摘要翻译： 提供一种化合物半导体晶体基板及其制造方法，其能够减少在外延生长的晶体中发生的诸如双胞胎和反相边界的平面缺陷，而不需要超出外延生长的附加步骤。 复合单晶基板，其基面是非极性面，所述基面具有具有极性的部分表面（部分极性表面）。 所述部分极性表面是比所述基面更高表面能的极性部分。 一种制造复合单晶衬底的方法，包括以下步骤：在复合单晶衬底的基面上沿正向外延生长化合物单晶，其中基面是非极性面并具有部分极性表面 并且切割已经与基底平行生长的化合物单晶层，或者至少去除所述基底，以获得化合物单晶块，其基面是仅具有部分 极地表面在其一部分具有最高的表面能。
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