公开(公告)号：US07875322B2

公开(公告)日：2011-01-25

申请号：US11794894

申请日：2006-01-05

申请人： Takashi Kobayashi ,  Shingo Furui ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Shingo Furui ,  Junichi Kitagawa

IPC分类号： C23C16/511

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.

摘要翻译： 脉冲微波通过匹配电路从微波产生单元提供给波导管。 微波通过内部导体提供给平面天线构件。 微波从平面天线构件通过微波传输板辐射到室内的晶片上方的空间中。 通过从平面天线构件通过微波传输板辐射到室中的脉动微波在室内形成电磁场，将Ar气体，H 2气体和O 2气体转化成等离子体，以在晶片上形成氧化膜。

公开(公告)号：US20080093658A1

公开(公告)日：2008-04-24

申请号：US11813043

申请日：2005-12-22

申请人： Toshihiko Shiozawa ,  Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

发明人： Toshihiko Shiozawa ,  Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

IPC分类号： H01L29/788 ,  H01L21/383 ,  H01L21/8247

CPC分类号： H01L29/513 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3143 ,  H01L29/40114 ,  H01L29/7881

摘要： When nitriding a tunnel oxide film in a nonvolatile memory device a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing nitrogen gas.

摘要翻译： 当在非易失性存储装置中对隧道氧化膜进行氮化时，通过使用含有氮气的工艺气体进行等离子体处理，在隧道氧化膜的表面部分形成氮化区域。

公开(公告)号：US20090035484A1

公开(公告)日：2009-02-05

申请号：US11794894

申请日：2006-01-05

申请人： Takashi Kobayashi ,  Shingo Furui ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Shingo Furui ,  Junichi Kitagawa

IPC分类号： C23C16/513

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.

摘要翻译： 脉冲微波通过匹配电路从微波产生单元提供给波导管。 微波通过内部导体提供给平面天线构件。 微波从平面天线构件通过微波传输板辐射到室内的晶片上方的空间中。 通过从平面天线构件通过微波传输板辐射到室中的脉动微波在室内形成电磁场，将Ar气体，H 2气体和O 2气体转化成等离子体，以在晶片上形成氧化膜。

公开(公告)号：US20080317975A1

公开(公告)日：2008-12-25

申请号：US11883523

申请日：2006-01-23

申请人： Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

发明人： Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

IPC分类号： C23C16/511 ,  B08B5/00 ,  C23C16/00 ,  C23C16/513

CPC分类号： H01J37/32862 ,  Y10S438/905

摘要： In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.

摘要翻译： 在通过使用具有根据某种图案形成的许多槽的平面天线（径向线槽天线）将微波发生器的微波辐射到室中的RLSA微波等离子体处理装置中，用Na等污染的室被使用 含有H2和O2的清洁气体。

公开(公告)号：US08034183B2

公开(公告)日：2011-10-11

申请号：US11883523

申请日：2006-01-23

申请人： Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

发明人： Shingo Furui ,  Takashi Kobayashi ,  Junichi Kitagawa

IPC分类号： B08B7/04 ,  B08B7/00

CPC分类号： H01J37/32862 ,  Y10S438/905

摘要： In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.

摘要翻译： 在通过使用具有根据某种图案形成的许多槽的平面天线（径向线槽天线）将微波发生器的微波辐射到室中的RLSA微波等离子体处理装置中，用Na等污染的室被使用 含有H2和O2的清洁气体。

公开(公告)号：US07972973B2

公开(公告)日：2011-07-05

申请号：US12443137

申请日：2007-09-28

申请人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C14/00 ,  C23C8/36

CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/3143 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/4236 ,  H01L29/66795

摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

摘要翻译： 本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响 在低压和低氧浓度条件下进行。 在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅 氧化膜。 在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法， 具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

公开(公告)号：US07910495B2

公开(公告)日：2011-03-22

申请号：US12443589

申请日：2007-09-27

申请人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

发明人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/469

CPC分类号： H01L21/76229 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621

摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

摘要翻译： 等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤 向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤 由等离子体处理。

公开(公告)号：US20100093186A1

公开(公告)日：2010-04-15

申请号：US12443137

申请日：2007-09-28

申请人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

IPC分类号： H01L21/316 ,  H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/3143 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/4236 ,  H01L29/66795

摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

公开(公告)号：US20100093185A1

公开(公告)日：2010-04-15

申请号：US12443044

申请日：2007-09-28

申请人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

发明人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

IPC分类号： H01L21/316 ,  C23C16/513 ,  C23C16/52

CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/76224 ,  H01L29/4236 ,  H01L29/66795

摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

摘要翻译： 本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响 在低压和低氧浓度条件下进行。 在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅 氧化膜。 在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法， 具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

公开(公告)号：US20100015815A1

公开(公告)日：2010-01-21

申请号：US12443589

申请日：2007-09-27

申请人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

发明人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/31

CPC分类号： H01L21/76229 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621

摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

摘要翻译： 等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤 向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤 由等离子体处理。