摘要:
A lead zirconate titanate type composition contains a three-component system lead zirconate titanate (X), which may be represented by the general formula of Pb(Ni, Nb)O3—PbZrO3—PbTiO3, an (A) constituent, which is Pb in excess of a quantity conforming to a stoichiometric ratio, a (B) constituent, which is Zn, and a (C) constituent, which is at least one kind of rare earth element selected from the group consisting of Ce, Yb, and Dy, the (A) constituent, the (B) constituent, and the (C) constituent being added to the three-component system lead zirconate titanate (X).
摘要:
When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要:
A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要:
A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight.
摘要:
A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要:
A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe, (P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a
摘要:
A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx, Tiy, Mb−x−y)bOc (P) (wherein M represents one or two or more metal elements; wherein 0
摘要:
A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.
摘要:
A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx,Tiy,Mb-x-y)bOc (P) (wherein M represents one or two or more metal elements; wherein 0
摘要:
A piezoelectric film of a perovskite oxide represented by a general expression (P) below and has a pyrochlore free single phase perovskite structure with a/b≦1.06. Pba(Zrx,Tiy,Mb-x-y)bOc (P) (where, M represents one or more types of metal elements, 0