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8 条记录 (耗时 0.025 秒)

    Gas supplying apparatus, control method of the same, gas supplying system, and endoscope system
    3.
    发明申请
    Gas supplying apparatus, control method of the same, gas supplying system, and endoscope system 审中-公开
    供气装置，其控制方法，供气系统和内窥镜系统

    公开(公告)号：US20070244363A1

    公开(公告)日：2007-10-18

    申请号：US11818158

    申请日：2007-06-13

    申请人： Daisuke Sano ,  Masashi Umemura ,  Kenji Noda ,  Atsuhiko Kasahi ,  Takefumi Uesugi

    发明人： Daisuke Sano ,  Masashi Umemura ,  Kenji Noda ,  Atsuhiko Kasahi ,  Takefumi Uesugi

    IPC分类号： A61B1/12 ,  A61M37/00 ,  A61B1/00

    CPC分类号： A61B1/31 ,  A61B1/00039 ,  A61B1/00045 ,  A61B1/00068 ,  A61B1/00165 ,  A61B1/015 ,  A61B1/3132 ,  A61B5/087 ,  A61B2017/00132 ,  A61M13/003 ,  A61M16/0051 ,  A61M16/024 ,  A61M2016/0027 ,  A61M2202/0225 ,  A61M2205/502 ,  A61M2230/202 ,  A61M2230/432

    摘要： A gas supplying apparatus according to the present invention includes a switching unit, which is connected to a gas supplying channel of an endoscope, configured to supply gas to the body cavity of a patient via the gas supplying channel, and switches to a state of supplying gas to the gas supplying channel or a state of stopping supply of gas, a time measuring unit configured to measure gas supply time, and a control unit, which is electrically connected to the time measuring unit, configured to control the switching unit, wherein the control unit controls the switching unit to make the gas supply to the gas supplying channel, and then controls the switching unit to switch from a state of supplying the gas to the gas supplying channel to a state of stopping supply of the gas when gas supply time by the time measuring unit is inputted, and the gas supply time measured by the time measuring unit reaches predetermined setting time set beforehand.

    摘要翻译： 根据本发明的气体供给装置包括：开关单元，其连接到内窥镜的气体供给通道，构造成经由气体供给通道向患者的体腔供给气体，并切换到供给状态 气体供给通道或停止供给气体的状态，被配置为测量供气时间的时间测量单元以及与时间测量单元电气连接的控制单元，该控制单元被配置为控制切换单元，其中， 控制单元控制切换单元使得气体供应到气体供应通道，然后控制切换单元从气体供应通道的供应状态切换到气体供应时间的停止供应状态 由时间测量单元输入，并且由时间测量单元测量的气体供应时间达到预先设定的预定设定时间。

    Semiconductor device and semiconductor integrated circuit having a conductive film on element region
    4.
    发明授权
    Semiconductor device and semiconductor integrated circuit having a conductive film on element region 失效
    在元件区域上具有导电膜的半导体器件和半导体集成电路

    公开(公告)号：US06396086B1

    公开(公告)日：2002-05-28

    申请号：US09404090

    申请日：1999-09-23

    申请人： Yuji Takeuchi ,  Riichiro Shirota ,  Seiichi Aritome ,  Masashi Umemura ,  Yuuichiro Murahama ,  Hitoshi Araki ,  Masamitsu Yahata ,  Osamu Ikeda

    发明人： Yuji Takeuchi ,  Riichiro Shirota ,  Seiichi Aritome ,  Masashi Umemura ,  Yuuichiro Murahama ,  Hitoshi Araki ,  Masamitsu Yahata ,  Osamu Ikeda

    IPC分类号： H01L2710

    CPC分类号： H01L27/088 ,  H01L21/76838 ,  H01L27/0629 ,  H01L27/0805 ,  H01L29/94

    摘要： In a semiconductor device of MOS structure, the element region has a shape such as a square shape which has a plurality of sides and a plurality of corners. On the element region, a conductive film which constitutes one electrode of the MOS structure is formed. The other electrode of the MOS structure is a silicon substrate. The conductive film is provided so as to cover at least sides adjacent to each other and so as not to cover the corners including the corners which are the contact points (intersecting points) of the adjacent sides. Further, in case the element region is in a ring shape, the conductive film is provided so as to cover none of the corners including the inside corners of the ring-shaped element region. By the above-mentioned structure, the occurrence of breakdown in the insulation film in the MOS structure can be prevented, and the reliability thereof can be enhanced.

    摘要翻译： 在MOS结构的半导体器件中，元件区域具有多个侧面和多个角的方形的形状。 在元件区域上形成构成MOS结构的一个电极的导电膜。 MOS结构的另一个电极是硅衬底。 导电膜被设置成覆盖彼此相邻的至少边，并且不覆盖包括作为相邻侧的接触点（交叉点）的角部的角部。 此外，在元件区域为环形的情况下，导电膜被设置成不覆盖包括环形元件区域的内角的任何角。 通过上述结构，可以防止在MOS结构中的绝缘膜中发生击穿，从而可以提高其可靠性。