公开(公告)号：US20070026324A1

公开(公告)日：2007-02-01

申请号：US11484606

申请日：2006-07-12

申请人： Takuji Yoshida ,  Hatsumi Kimura ,  Nobuaki Ishiga ,  Takahito Yamabe ,  Toshio Araki

发明人： Takuji Yoshida ,  Hatsumi Kimura ,  Nobuaki Ishiga ,  Takahito Yamabe ,  Toshio Araki

IPC分类号： G03F1/00 ,  G03F1/08

CPC分类号： C23F1/26 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3649 ,  C03C17/3657 ,  C03C17/3671 ,  C03C2217/948 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/3492 ,  G02F1/133512

摘要： A substrate with a light-shielding film according to one mode of the invention is obtained in a method of manufacture of a substrate with a light-shielding film having a light-shielding film pattern formed on a substrate, by depositing in order a first film having chromium oxide and a second film having chromium on a substrate, to form a multilayer film; forming a resist pattern on the multilayer film; performing etching of the multilayer film, using an etching liquid comprising ceric ammonium nitrate to which nitric acid is added at a concentration of at least 2.5 mol/liter, to form a light-shielding film pattern; and removing the resist pattern.

摘要翻译： 根据本发明的一种模式的具有遮光膜的基板是在具有通过在基板上形成的遮光膜图案的遮光膜的基板的制造方法中获得的，通过依次沉积第一膜 具有氧化铬和在基板上具有铬的第二膜，以形成多层膜; 在所述多层膜上形成抗蚀剂图案; 使用包含浓度为2.5摩尔/升的硝酸的硝酸铈铵的蚀刻液进行多层膜的蚀刻，形成遮光膜图案; 并去除抗蚀剂图案。

公开(公告)号：US07470571B2

公开(公告)日：2008-12-30

申请号：US11951832

申请日：2007-12-06

申请人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

发明人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

IPC分类号： H01L21/00

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F2001/136236 ,  H01L21/32139 ,  H01L27/124

摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

公开(公告)号：US07323713B2

公开(公告)日：2008-01-29

申请号：US11189980

申请日：2005-07-27

申请人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

发明人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F2001/136236 ,  H01L21/32139 ,  H01L27/124

摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

摘要翻译： 一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多 其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少 去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化 第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

公开(公告)号：US20060022199A1

公开(公告)日：2006-02-02

申请号：US11189980

申请日：2005-07-27

申请人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

发明人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F2001/136236 ,  H01L21/32139 ,  H01L27/124

摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

摘要翻译： 一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多 其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少 去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化 第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

公开(公告)号：US20080138921A1

公开(公告)日：2008-06-12

申请号：US12029281

申请日：2008-02-11

申请人： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

发明人： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

IPC分类号： G02F1/13

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/136227

摘要： A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

摘要翻译： 液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘 设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触 在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。 第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

公开(公告)号：US08031283B2

公开(公告)日：2011-10-04

申请号：US12353480

申请日：2009-01-14

申请人： Toshio Araki ,  Osamu Miyakawa ,  Nobuaki Ishiga ,  Shingo Nagano

发明人： Toshio Araki ,  Osamu Miyakawa ,  Nobuaki Ishiga ,  Shingo Nagano

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F2201/123

摘要： An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.

摘要翻译： 根据本发明的一个方面的有源矩阵基板是包括TFT的TFT阵列基板。 有源矩阵基板包括电连接到TFT的栅电极的栅极信号线，形成在栅极信号线上方的第一绝缘膜，形成在第一绝缘膜上方并被提供公共电位的辅助电容电极，第二绝缘 形成在辅助电容电极上的膜，形成在第二绝缘膜上方并与TFT的源电极电连接的源极信号线，形成在源极信号线上方的第三绝缘膜，以及形成在第三绝缘膜上方的像素电极 使得像素电极与辅助电容电极的一部分重叠。

公开(公告)号：US20110012121A1

公开(公告)日：2011-01-20

申请号：US12887865

申请日：2010-09-22

申请人： KAZUNORI INOUE ,  Harumi Murakami ,  Toshio Araki ,  Nobuaki Ishiga

发明人： KAZUNORI INOUE ,  Harumi Murakami ,  Toshio Araki ,  Nobuaki Ishiga

IPC分类号： H01L33/08

CPC分类号： G02F1/1341 ,  G02F1/1345 ,  G02F1/136213 ,  G02F2201/121 ,  H01L27/124 ,  H01L27/1248

摘要： A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

摘要翻译： 一种显示装置，包括阵列中形成有TFT的TFT阵列基板，与TFT阵列基板相对配置的对置基板和用于将TFT阵列基板和对置基板粘合的密封图案，其中， 相对基板具有对电极，TFT阵列基板具有第一导电层，形成在第一导电层上的第一绝缘膜，经由第一绝缘膜与第一导电层相交的第二导电层，第二导电层 形成在第二导电层上并且具有至少两层的绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，并且密封图案经由第二绝缘膜与第二导电层重叠 。

公开(公告)号：US07400365B2

公开(公告)日：2008-07-15

申请号：US10900607

申请日：2004-07-28

申请人： Fumihiro Gotoh ,  Nobuaki Ishiga ,  Toshio Araki ,  Kazunori Inoue ,  Hiroyasu Itoh ,  Eiji Shibata ,  Masanao Nabeshima

发明人： Fumihiro Gotoh ,  Nobuaki Ishiga ,  Toshio Araki ,  Kazunori Inoue ,  Hiroyasu Itoh ,  Eiji Shibata ,  Masanao Nabeshima

IPC分类号： G02F1/136 ,  G02F1/1345

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/12 ,  H01L29/4908

摘要： A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.

摘要翻译： 一种用于制造液晶显示装置的薄膜晶体管阵列基板的方法，包括：（a）在绝缘基板上形成第一金属薄膜层，并通过第一光刻形成栅极布线和栅电极，（b） 形成栅极绝缘膜层，半导体膜层，欧姆接触膜层和第二金属薄膜层，通过第二光刻法形成薄膜晶体管，（c）形成层间绝缘膜，形成像素接触 孔，第一接触孔和第二接触孔，以及（d）形成透明导电膜，并通过第四光刻形成像素电极。 第一金属薄膜具有包括由铝或铝合金制成的第一层和位于所述第一层上的第二层的第二金属薄膜的二层结构，第二金属薄膜由主要含有钼的合金形成。

公开(公告)号：US07733446B2

公开(公告)日：2010-06-08

申请号：US11093223

申请日：2005-03-30

申请人： Yuichi Masutani ,  Shingo Nagano ,  Takuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

发明人： Yuichi Masutani ,  Shingo Nagano ,  Takuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

IPC分类号： G02F1/136 ,  G02F1/1335

CPC分类号： G02F1/13458 ,  G02F1/133555 ,  G02F1/13439 ,  G02F1/136227

摘要： The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.

摘要翻译： 本发明旨在提供一种半透射型液晶显示装置的制造方法，其中简化了其结构和制造方法的方法，从而能够降低制造成本。 为了实现上述目的，本发明的半透射型液晶显示装置具有：反射像素电极形成有构成源电极，漏电极，源极配线的第二导电膜的层结构， 因此在第二金属膜的上层上，通过绝缘膜形成由透明导电膜构成的透射性像素电极。 可以通过5倍的光刻工艺形成TFT阵列基板。

公开(公告)号：US20080118996A1

公开(公告)日：2008-05-22

申请号：US11951832

申请日：2007-12-06

申请人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

发明人： Nobuaki Ishiga ,  Takuji Yoshida ,  Yuichi Masutani ,  Shingo Nagano

IPC分类号： H01L21/28

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F2001/136236 ,  H01L21/32139 ,  H01L27/124

摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

摘要翻译： 一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多 其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少 去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化 第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。